公开(公告)号：US09519285B2

公开(公告)日：2016-12-13

申请号：US13666176

申请日：2013-01-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Po-Feng Tsai ,  Chia-Tong Ho ,  Sunny Wu ,  Jo Fei Wang ,  Jong-I Mou ,  Chin-Hsiang Lin

IPC: G05B23/02 ,  G05B19/4065

CPC classification number: G05B23/024 ,  G05B19/4065

Abstract: The present disclosure provides various methods for tuning process parameters of a process tool, including systems for implementing such tuning. An exemplary method for tuning process parameters of a process tool such that the wafers processed by the process tool exhibit desired process monitor items includes defining behavior constraint criteria and sensitivity adjustment criteria; generating a set of possible tool tuning process parameter combinations using process monitor item data associated with wafers processed by the process tool, sensitivity data associated with a sensitivity of the process monitor items to each process parameter, the behavior constraint criteria, and the sensitivity adjustment criteria; generating a set of optimal tool tuning process parameter combinations from the set of possible tool tuning process parameter combinations; and configuring the process tool according to one of the optimal tool tuning process parameter combinations.

Abstract translation: 本公开提供了用于调整过程工具的过程参数的各种方法，包括用于实现这种调整的系统。 用于调整过程工具的过程参数的示例性方法，使得由过程工具处理的晶片呈现期望的过程监视项目包括定义行为约束标准和灵敏度调整标准; 使用与由处理工​​具处理的晶片相关联的过程监视项目数据生成一组可能的工具调整过程参数组合，与过程监视项目对每个过程参数的灵敏度相关联的灵敏度数据，行为约束标准和灵敏度调整标准 ; 从可能的工具调整过程参数组合的集合中生成一组最佳的工具调整过程参数组合; 以及根据最佳工具调整过程参数组合之一来配置过程工具。

公开(公告)号：US20140306119A1

公开(公告)日：2014-10-16

申请号：US14317650

申请日：2014-06-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J37/244

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The plurality of Faraday of the 2D profiler are arranged in a pattern that is offset in a direction. The 1D profiler is coupled to a first end of the 2D profiler and extends beyond two adjacent outer edges of the 2D profiler. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in the direction.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 2D轮廓仪的多个法拉第以一个方向偏移的图案排列。 1D轮廓仪耦合到2D轮廓仪的第一端并延伸超过2D轮廓仪的两个相邻的外边缘。 光束监视装置还包括控制臂。 控制臂可操作以便于沿着该方向的光束监视装置的移动。

公开(公告)号：US20140084340A1

公开(公告)日：2014-03-27

申请号：US13629109

申请日：2012-09-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Sung-Li Wang ,  Ding-Kang Shih ,  Chin-Hsiang Lin ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC: H01L29/06 ,  H01L21/36

CPC classification number: H01L21/76856 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/285 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76888 ,  H01L23/485 ,  H01L29/0684 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851 ,  H01L2029/7858 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a dielectric layer coating the sidewalls and bottom of the opening, wherein the dielectric layer has a thickness ranging from 1 nm to 10 nm; and a metal layer filling a coated opening of the dielectric layer.

Abstract translation: 本发明涉及半导体器件的接触结构。 用于半导体器件的接触结构的示例性结构包括：基底，其包括主表面和主表面下方的沟槽; 填充沟槽的应变材料，其中应变材料的晶格常数不同于衬底的晶格常数; 在所述应变材料上具有开口的层间介电层（ILD）层，其中所述开口包括电介质侧壁和应变材料底部; 涂覆所述开口的侧壁和底部的电介质层，其中所述电介质层具有1nm至10nm的厚度; 以及填充介电层的涂覆开口的金属层。

公开(公告)号：US20140024187A1

公开(公告)日：2014-01-23

申请号：US14030518

申请日：2013-09-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsi Yeh ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L29/66

CPC classification number: H01L29/66818 ,  H01L29/66795

Abstract: Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.

Abstract translation: 用于形成例如鳍状结构的半导体材料，特别是III-V材料可能在化学机械抛光步骤期间遭受结构损坏。 可以通过氧化材料损坏的表面，然后蚀刻掉氧化的材料来减少或消除这种损伤。 蚀刻步骤可以与蚀刻回图案化氧化物层（例如浅沟槽隔离层）的步骤同时完成。

公开(公告)号：US20130280823A1

公开(公告)日：2013-10-24

申请号：US13918731

申请日：2013-06-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Lin Chang ,  Chih-Hong Hwang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01L21/66

CPC classification number: H01L22/10 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/24542 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01L21/265

Abstract: An apparatus for monitoring an ion distribution of a wafer comprises a first sensor and a sensor. The first sensor, the second senor and the wafer are placed in an effective range of a uniform ion implantation current profile. A controller determines the ion dose of each region of the wafer based upon the detected signal from the first sensor and the second senor. In addition, the controller adjusts the scanning frequency of an ion beam or the movement speed of the wafer to achieve a uniform ion distribution on the wafer.

Abstract translation: 用于监测晶片的离子分布的装置包括第一传感器和传感器。 将第一传感器，第二传感器和晶片放置在均匀离子注入电流分布的有效范围内。 控制器基于来自第一传感器和第二传感器的检测信号确定晶片的每个区域的离子剂量。 此外，控制器调节离子束的扫描频率或晶片的移动速度，以在晶片上实现均匀的离子分布。