Navigation device, recommended speed arithmetic device, and recommended speed presentation device
    111.
    发明授权
    Navigation device, recommended speed arithmetic device, and recommended speed presentation device 有权
    导航装置,推荐速度运算装置和推荐速度显示装置

    公开(公告)号:US08700299B2

    公开(公告)日:2014-04-15

    申请号:US13989078

    申请日:2011-02-24

    CPC classification number: G01C21/3697 G08G1/096716 G08G1/09675 G08G1/096775

    Abstract: Disclosed is a navigation device including a traveling route estimating unit 1 for estimating a route along which a moving object will travel and which falls within a predetermined region from a current position, a first recommended speed arithmetic unit 10 for computing a recommended speed in each of road sections on the route estimated by the traveling route estimating unit 1 on the basis of road state information showing a road state, and a second recommended speed arithmetic unit 20 for computing a recommended speed in a road section between the road sections for each of which the recommended speed is computed by the first recommended speed arithmetic unit 10 according to a predetermined speed variation function.

    Abstract translation: 公开了一种导航装置,其包括:行进路线估计单元1,用于估计运动物体行进的路线,并且落在距当前位置的预定区域内;第一推荐速度运算单元10,用于计算每个运动物体的推荐速度; 基于路面状态信息表示道路状态由行驶路线推定单元1推定的路线上的路段,以及第二推荐速度运算单元20,用于计算路段之间的路段中的推荐速度, 根据预定的速度变化函数,推荐速度由第一推荐速度运算单元10计算。

    Semiconductor storage device
    112.
    发明授权
    Semiconductor storage device 有权
    半导体存储设备

    公开(公告)号:US08649223B2

    公开(公告)日:2014-02-11

    申请号:US13403294

    申请日:2012-02-23

    Applicant: Takashi Maeda

    Inventor: Takashi Maeda

    CPC classification number: G11C16/26

    Abstract: According to one embodiment, a device includes transistors each with a path connected to a bit line, and circuits each includes a switch, the circuit being connected to the bit line. The device includes a amplifier connected to the transistor and to the circuit, and a latch connected to the amplifier to hold first data before read is carried out on a cell and to hold second data if a current equal to or a larger than a predetermined value flows via the bit line. In the device, the switch is turned on or off depending on data held in another latch located adjacently in a direction of the word lines, to control a connection between the bit line and connected to another bit line the amplifier via the circuit.

    Abstract translation: 根据一个实施例,一种器件包括各自具有连接到位线的路径的晶体管,并且电路各自包括开关,该电路连接到位线。 该装置包括连接到晶体管和电路的放大器,以及连接到放大器的锁存器,用于在小区上执行读取之前保存第一数据,并且如果电流等于或大于预定值,则保持第二数据 通过位线流动。 在该装置中,取决于保持在与字线方向相邻的另一个锁存器中的数据,开关被接通或断开,以控制位线之间的连接,并通过该电路连接到放大器的另一位线。

    Image reading device having image sensor
    113.
    发明授权
    Image reading device having image sensor 有权
    具有图像传感器的图像读取装置

    公开(公告)号:US08643911B2

    公开(公告)日:2014-02-04

    申请号:US12630165

    申请日:2009-12-03

    Applicant: Takashi Maeda

    Inventor: Takashi Maeda

    Abstract: The image reading device includes a first document member, a white reference plate, an image sensor, a conveying section, and a control section. A first document is placed on the first document member. The image sensor reads the first document placed on the first document member. The conveying section conveys the image sensor in a first direction and a second direction opposite to the first direction. The image sensor reads the first document while being moved in the first direction. The control section executes a first control. The first control executes a process to control the image sensor to read the white reference plate, to control the conveying section to move the image sensor in the second direction, to control the conveying section to start moving the image sensor in the first direction, and to control the image sensor to read the first document, in this order.

    Abstract translation: 图像读取装置包括第一原稿构件,白色基准板,图像传感器,输送部和控制部。 第一个文档放置在第一个文档成员上。 图像传感器读取放置在第一个文档成员上的第一个文档。 传送部分沿与第一方向相反的第一方向和第二方向传送图像传感器。 图像传感器在沿第一方向移动时读取第一文档。 控制部执行第一控制。 第一控制执行控制图像传感器以读取白参考板的处理,以控制传送部分沿第二方向移动图像传感器,以控制传送部分开始沿第一方向移动图像传感器,以及 以此顺序控制图像传感器读取第一个文档。

    Nonvolatile semiconductor memory device
    114.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号:US08488378B2

    公开(公告)日:2013-07-16

    申请号:US13301948

    申请日:2011-11-22

    Applicant: Takashi Maeda

    Inventor: Takashi Maeda

    CPC classification number: H01L27/11582 H01L27/11565

    Abstract: A nonvolatile semiconductor memory device according to one aspect includes a semiconductor substrate, a memory string, a plurality of first conductive layers, a second conductive layer, and a third conductive layer. The memory string has a plurality of memory cells, a dummy transistor and a back gate transistor connected in series in a direction perpendicular to the semiconductor substrate. The plurality of first conductive layers are electrically connected to gates of the memory cells. The second conductive layer is electrically connected to a gate of the dummy transistor. The third conductive layer is electrically connected to a gate of the back gate transistor. The second conductive layer is short-circuited with the third conductive layer.

    Abstract translation: 根据一个方面的非易失性半导体存储器件包括半导体衬底,存储器串,多个第一导电层,第二导电层和第三导电层。 存储器串具有与垂直于半导体衬底的方向串联连接的多个存储单元,虚拟晶体管和背栅晶体管。 多个第一导电层电连接到存储单元的栅极。 第二导电层电连接到虚拟晶体管的栅极。 第三导电层电连接到背栅晶体管的栅极。 第二导电层与第三导电层短路。

    Image-Reading Device and Computer-Readable Storage Medium
    115.
    发明申请
    Image-Reading Device and Computer-Readable Storage Medium 有权
    图像读取装置和计算机可读存储介质

    公开(公告)号:US20130083365A1

    公开(公告)日:2013-04-04

    申请号:US13549029

    申请日:2012-07-13

    Applicant: Takashi Maeda

    Inventor: Takashi Maeda

    Abstract: An image-reading device may include a conveyor, a reading unit, and a control device. The control device may be configured to extract feature points from an area between a first edge and a line, obtain the density of the extracted feature points, and compare the density to a threshold. The control device may be further configured to identify the first edge as a document leading edge or a document trailing edge based on the comparison result.

    Abstract translation: 图像读取装置可以包括传送器,读取单元和控制装置。 控制装置可以被配置为从第一边缘和第一边缘之间的区域提取特征点,获得提取的特征点的密度,并将密度与阈值进行比较。 控制装置还可以被配置为基于比较结果将第一边缘识别为文档前缘或文档后缘。

    Glass substrate for a magnetic disk, magnetic disk and method of manufacturing a magnetic disk
    116.
    发明授权
    Glass substrate for a magnetic disk, magnetic disk and method of manufacturing a magnetic disk 有权
    磁盘用玻璃基板,磁盘及制造磁盘的方法

    公开(公告)号:US08241769B2

    公开(公告)日:2012-08-14

    申请号:US12810782

    申请日:2008-12-24

    CPC classification number: G11B5/7315 G11B5/82

    Abstract: A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less.

    Abstract translation: 一种磁盘用玻璃基板,其特征在于,在相对于其外周端部的中央部侧的玻璃基板的表面上任意选择的两个位置的区域中,形状波长为60nm的波长的表面形状 在每个区域中从表面形状提取至500μm,并且假设表面形状的均方根粗糙度Rq作为微波特性Rq,则区域的微波特性Rq之差为0.02nm以下,或者 区域的微波的标准偏差之间的差异为0.04nm以下。

    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    117.
    发明申请
    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
    非挥发性半导体存储器件

    公开(公告)号:US20120187466A1

    公开(公告)日:2012-07-26

    申请号:US13439213

    申请日:2012-04-04

    Applicant: Takashi Maeda

    Inventor: Takashi Maeda

    CPC classification number: G11C16/04 H01L27/11556 H01L27/11578

    Abstract: At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included in a second memory string connected to the same third and fourth conductive layers as the first memory string. At least one of either the memory transistors or the back-gate transistor in the first memory string and at least one of either the memory transistors or the back-gate transistor in the second memory string are connected to the independent first or fifth conductive layers, respectively.

    Abstract translation: 包括在第一存储器串中的至少一些存储晶体管共同连接到第一导电层,其连接到连接到与第一存储器相同的第三和第四导电层的第二存储器串中的至少一些存储晶体管 串。 第一存储器串中的存储晶体管或背栅晶体管中的至少一个以及第二存储器串中的存储晶体管或背栅晶体管中的至少一个连接到独立的第一或第五导电层, 分别。

    Small Projection Toy
    118.
    发明申请
    Small Projection Toy 审中-公开
    小投影玩具

    公开(公告)号:US20120154754A1

    公开(公告)日:2012-06-21

    申请号:US13408540

    申请日:2012-02-29

    CPC classification number: A63H33/22 A63H3/003 G03B21/00

    Abstract: A small projection toy of an incorporation-in-small-article type, the small projection toy configured such that: a small projector including a projection lens barrel and a battery unit can be housed in a small article such as various local specialties, models of animals and vehicles, toys; and an incorporated image film can be watched by projection.

    Abstract translation: 一种小型投影式玩具,小型投影玩具被构造成:包括投影透镜镜筒和电池单元的小型投影仪可以容纳在诸如各种当地特色的小型物品中, 动物和车辆,玩具; 并且可以通过投影来观看并入的图像胶片。

    VEHICLE-MOUNTED NARROW-BAND WIRELESS COMMUNICATION APPARATUS AND ROADSIDE-TO-VEHICLE NARROW-BAND WIRELESS COMMUNICATION SYSTEM
    119.
    发明申请
    VEHICLE-MOUNTED NARROW-BAND WIRELESS COMMUNICATION APPARATUS AND ROADSIDE-TO-VEHICLE NARROW-BAND WIRELESS COMMUNICATION SYSTEM 有权
    车载安全窄带无线通信设备和路由到车载窄带无线通信系统

    公开(公告)号:US20110254699A1

    公开(公告)日:2011-10-20

    申请号:US13141041

    申请日:2010-03-02

    CPC classification number: G08G1/164 H04W4/04

    Abstract: A vehicle-mounted narrow-band wireless communication apparatus includes: information storing/managing section 905 for storing and managing roadside information from a wireless communication unit and operating condition information from an operating condition detection unit 903; an information provision determination unit 904 for determining whether or not information can be provided on the basis of the roadside information and the operating condition information; an HMI output control unit 906 for controlling HMI output on the basis of a determination result from the information provision determination unit 904 and environment information relating to a junction neighbourhood obtained from a parameter management unit 907 for managing parameters relating to an HMI; and an information provision output apparatus 901 for performing information provision on the basis of an HMI output request transmitted from the HMI output control unit 906.

    Abstract translation: 车载窄带无线通信装置包括:信息存储/管理部分905,用于从无线通信单元存储和管理路边信息和来自操作条件检测单元903的操作条件信息; 信息提供确定单元904,用于基于路边信息和操作条件信息确定是否可以提供信息; 用于控制从所述信息提供判定单元904和与从参数管理单元907用于管理与到HMI参数而获得的结附近的环境信息的判定结果的基础上,HMI输出HMI输出控制单元906; 以及信息提供输出装置901,用于根据从HMI输出控制单元906发送的HMI输出请求执行信息提供。

    Non-volatile semiconductor storage device
    120.
    发明授权
    Non-volatile semiconductor storage device 有权
    非易失性半导体存储器件

    公开(公告)号:US07933151B2

    公开(公告)日:2011-04-26

    申请号:US12564576

    申请日:2009-09-22

    Abstract: Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.

    Abstract translation: 存储器串包括:第一半导体层,包括沿垂直于衬底的方向延伸的柱状部分; 形成为围绕所述柱状部的侧面的第一电荷存储层; 以及形成为围绕所述第一电荷存储层的第一导电层。 第一选择晶体管包括:从柱状部分的顶表面向上延伸的第二半导体层; 形成为包围第二半导体层的侧面的第二电荷存储层; 以及形成为围绕所述第二电荷存储层的第二导电层。 非易失性半导体存储装置还包括控制电路,其在从所选择的一个存储器串中读取数据之前,将电荷累积在连接到第一选择晶体管的第一选择晶体管的第二电荷存储层中 取消选择一个内存字符串。

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