Abstract:
Disclosed is a navigation device including a traveling route estimating unit 1 for estimating a route along which a moving object will travel and which falls within a predetermined region from a current position, a first recommended speed arithmetic unit 10 for computing a recommended speed in each of road sections on the route estimated by the traveling route estimating unit 1 on the basis of road state information showing a road state, and a second recommended speed arithmetic unit 20 for computing a recommended speed in a road section between the road sections for each of which the recommended speed is computed by the first recommended speed arithmetic unit 10 according to a predetermined speed variation function.
Abstract:
According to one embodiment, a device includes transistors each with a path connected to a bit line, and circuits each includes a switch, the circuit being connected to the bit line. The device includes a amplifier connected to the transistor and to the circuit, and a latch connected to the amplifier to hold first data before read is carried out on a cell and to hold second data if a current equal to or a larger than a predetermined value flows via the bit line. In the device, the switch is turned on or off depending on data held in another latch located adjacently in a direction of the word lines, to control a connection between the bit line and connected to another bit line the amplifier via the circuit.
Abstract:
The image reading device includes a first document member, a white reference plate, an image sensor, a conveying section, and a control section. A first document is placed on the first document member. The image sensor reads the first document placed on the first document member. The conveying section conveys the image sensor in a first direction and a second direction opposite to the first direction. The image sensor reads the first document while being moved in the first direction. The control section executes a first control. The first control executes a process to control the image sensor to read the white reference plate, to control the conveying section to move the image sensor in the second direction, to control the conveying section to start moving the image sensor in the first direction, and to control the image sensor to read the first document, in this order.
Abstract:
A nonvolatile semiconductor memory device according to one aspect includes a semiconductor substrate, a memory string, a plurality of first conductive layers, a second conductive layer, and a third conductive layer. The memory string has a plurality of memory cells, a dummy transistor and a back gate transistor connected in series in a direction perpendicular to the semiconductor substrate. The plurality of first conductive layers are electrically connected to gates of the memory cells. The second conductive layer is electrically connected to a gate of the dummy transistor. The third conductive layer is electrically connected to a gate of the back gate transistor. The second conductive layer is short-circuited with the third conductive layer.
Abstract:
An image-reading device may include a conveyor, a reading unit, and a control device. The control device may be configured to extract feature points from an area between a first edge and a line, obtain the density of the extracted feature points, and compare the density to a threshold. The control device may be further configured to identify the first edge as a document leading edge or a document trailing edge based on the comparison result.
Abstract:
A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less.
Abstract:
At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included in a second memory string connected to the same third and fourth conductive layers as the first memory string. At least one of either the memory transistors or the back-gate transistor in the first memory string and at least one of either the memory transistors or the back-gate transistor in the second memory string are connected to the independent first or fifth conductive layers, respectively.
Abstract:
A small projection toy of an incorporation-in-small-article type, the small projection toy configured such that: a small projector including a projection lens barrel and a battery unit can be housed in a small article such as various local specialties, models of animals and vehicles, toys; and an incorporated image film can be watched by projection.
Abstract:
A vehicle-mounted narrow-band wireless communication apparatus includes: information storing/managing section 905 for storing and managing roadside information from a wireless communication unit and operating condition information from an operating condition detection unit 903; an information provision determination unit 904 for determining whether or not information can be provided on the basis of the roadside information and the operating condition information; an HMI output control unit 906 for controlling HMI output on the basis of a determination result from the information provision determination unit 904 and environment information relating to a junction neighbourhood obtained from a parameter management unit 907 for managing parameters relating to an HMI; and an information provision output apparatus 901 for performing information provision on the basis of an HMI output request transmitted from the HMI output control unit 906.
Abstract:
Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings.