摘要:
A solid-state imaging device includes a plurality of photo receivers arranged in a two-dimensional array on a semiconductor substrate, the photo receivers receiving exit light from an imaging optical system; and a plurality of condensing lenses arranged over the said plurality of photo receivers, respectively. At least either the plurality of condensing lenses or the plurality of photo receivers are arranged at smaller pitches where an absolute value of an exit pupil position in the imaging optical system is large and at greater pitches where the absolute value of the exit pupil position is small.
摘要:
An optical spectrum analyzer measures to-be-measured light while carrying out calibration processing for correcting wavelength information of spectrum data of the to-be-measured light by a wavelength information correction device through a storage device based on the spectrum data of reference light that is obtained by causing the reference light whose wavelength is known to be incident on a tunable wavelength filter from light incident devices at all times together with the to-be-measured light. Since the optical spectrum analyzer can continuously measure the to-be-measured light in a wide wavelength range at high speed while maintaining high wavelength accuracy, it can continuously obtain the spectrum data of the to-be-measured light with high wavelength accuracy even if it is installed in a place in which an environment intensely changes.
摘要:
A semiconductor integrated circuit is a synchronous semiconductor integrated circuit which operates in synchronism with a clock signal, and includes memory cells, bit lines, a pre-charge circuit and a pre-charge controlling circuit. The memory cells store information, and are connected to the bit lines. The pre-charge circuit performs a pre-charge operation for pre-charging a bit line. The pre-charge controlling circuit controls the pre-charge operation of the pre-charge circuit. The pre-charge controlling circuit synchronizes starting of the pre-charge operation with the edge of the clock signal.
摘要:
In a flow sensor, a heater is provided in the middle of an insulation thin film stretched above a gap on a substrate. Temperature measuring elements, which in some embodiments are thermopiles, are provided on both sides of the same, and an ambient temperature measuring resistive element is provided on the top surface of the silicon substrate. The thermopiles in some embodiments are made of polysilicon and aluminum, and in some embodiments the polysilicon is doped with phosphorus (P). In some embodiments, the amount of phosphorus is determined such that temperature characteristics of the thermopiles and have an absolute value substantially equal to that of temperature characteristics attributable to factors other than the thermopiles and have a (positive or negative) sign opposite to that of the latter. Thus, the temperature characteristics of the thermopiles cancel the temperature characteristics attributable to factors other than the thermopiles.
摘要:
A reinforcing fiber is provided, which can exhibit sufficient adhesive strength even with single layer film coating, a fiber processing agent which can enhance the strength of adhesion between the fiber and the matrix, and a rubber product employing the reinforcing fiber. The fiber processing agent contains a rubber modified epoxy resin. The rubber modified epoxy resin is obtained by epoxidating a high molecular compound having rubber elasticity, and therefore possesses both high elasticity peculiar to rubber and high adhesive strength due to the epoxidation. The high molecular compound having rubber elasticity includes a butadiene-styrene copolymer latex, and an acrylonitrile-styrene copolymer latex, for example. This epoxidized rubber latex is combined with an emulsified phenol resin.
摘要:
Developing solution for a photoresist comprising an alicyclic amine compound and a non-metallic alkali compound is described. The developing solution exhibits excellent wettability and dissolution selectivity to alicyclic compound-based resists. Also, the developing solution does not produce dissolution residues, and it makes it possible to reliably form ultra fine patterns.
摘要:
A method of producing tricyclodecane dicarbaldehyde and/or pentacyclopentadecane dicarbaldehyde by the hydroformylation of dicyclopentadiene and/or tricyclopentadiene. The tricyclodecane dicarbaldehyde and/or pentacyclopentadecane dicarbaldehyde in the hydroformylation product liquid are extracted with an extraction solvent comprising a polyhydric alcohol having 2 to 6 carbon atoms. With such extraction, the tricyclodecane dicarbaldehyde and/or pentacyclopentadecane dicarbaldehyde transfer into the extraction solvent while retaining the catalyst components in the hydroformylation solvent. The controlled extraction atmosphere with an oxygen concentration of 1000 ppm or lower prevents the rhodium compound from transferring into the extraction solvent, thereby avoiding the loss of expensive rhodium. The extraction solvent containing tricyclodecane dicarbaldehyde and/or pentacyclopentadecane dicarbaldehyde as such can be directly subjected to catalytic hydrogenation to produce corresponding tricyclodecane dimethanol and/or pentacyclopentadecane dimethanol.
摘要:
Disclosed is a thin-film transistor which can be operated even if a high voltage is applied thereto. The thin-film transistor consists of a first and a second thin-film transistor. Each thin-film transistor has an offset region between an active region and a drain region whose conductivity is controlled by a sub-gate electrode. Each thin-film transistor has a sub-gate insulator between a sub-gate electrode and the offset region which is thicker than a main-gate insulator between the main-gate electrode and the active region. The thickness of the main-gate insulator of the second thin-film transistor is thicker than the thickness of the main-gate insulator of the first thin-film transistor.
摘要:
In a semiconductor device such as a thin film transistor, a semiconductor region is formed and an insulating film is formed on the semiconductor region to have a contact hole extending to the semiconductor region. An electrically conductive metal layer is formed of aluminium to fill the contact hole. An electrically conductive protection layer is formed on the metal layer to prevent oxidation of the metal layer during manufacturing of the semiconductor device. Material of the protection layer is more difficult to be oxidized than aluminium. A transparent electrode is formed on the protection layer such that the electrode is electrically connected to the semiconductor region. The protection layer may be formed of titanium or a laminate layer of a titanium layer and a titanium nitride layer.
摘要:
An input buffer circuit is connected to a first power supply voltage pad for applying a first power supply voltage, and a first ground line. An internal circuit larger in power consumption than the input buffer circuit is connected to a second power supply voltage pad for applying a second power supply voltage, and a second ground line. The parasitic resistance of the first ground line is higher than that of the second ground line. By connecting a capacitance between a power supply line connected to the first power supply voltage pad, and the first ground line, fluctuations in first power supply voltage are suppressed to prevent the input buffer circuit from malfunctioning.