公开(公告)号：US20120015214A1

公开(公告)日：2012-01-19

申请号：US13243553

申请日：2011-09-23

申请人： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.

摘要翻译： 一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层 层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自 由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。

公开(公告)号：US20110261478A1

公开(公告)日：2011-10-27

申请号：US13092044

申请日：2011-04-21

申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC分类号： G11B5/02 ,  G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01F41/325 ,  H01L43/08 ,  Y10T428/1114

摘要： According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni.

摘要翻译： 根据一个实施例，磁阻元件包括堆叠和​​一对电极，其允许电流沿垂直于堆叠表面的方向流过堆叠。 堆叠包括盖层，磁化钉扎层，设置在盖层和磁化钉扎层之间的无磁化层，设置在磁化钉扎层和磁化自由层之间的隧道绝缘体，以及设置在磁化层中的功能层 在磁化固定层和隧道绝缘体之间，在隧道绝缘体和磁化自由层之间，在磁化自由层内，或在磁化自由层和覆盖层之间。 功能层包括包含选自Zn，In，Sn和Cd中的至少一种元素的氧化物和选自Fe，Co和Ni中的至少一种元素。

公开(公告)号：US07776387B2

公开(公告)日：2010-08-17

申请号：US11802474

申请日：2007-05-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： B05D5/12

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20100092803A1

公开(公告)日：2010-04-15

申请号：US12585855

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/706 ,  B01J19/08 ,  C23C16/44

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/36 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5846 ,  C23C14/5853 ,  G01R33/093 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。 。

公开(公告)号：US20090104475A1

公开(公告)日：2009-04-23

申请号：US12314811

申请日：2008-12-17

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20080311431A1

公开(公告)日：2008-12-18

申请号：US12155924

申请日：2008-06-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/65

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G01S7/032 ,  G01S13/34 ,  G01S2013/936 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/66 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.

摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。

公开(公告)号：US20080204943A1

公开(公告)日：2008-08-28

申请号：US11902657

申请日：2007-09-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85) M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.

摘要翻译： 磁阻元件包括：其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。 第一磁性层和第二磁性层中的至少一个具有由M 1 aM 2 bXc（其中5≤a≤68,10≤b≤73且22 <= c < = 85）M 1是选自Co，Fe和Ni中的至少一种元素。 M 2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

公开(公告)号：US20080008909A1

公开(公告)日：2008-01-10

申请号：US11802474

申请日：2007-05-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33 ,  G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US08284518B2

公开(公告)日：2012-10-09

申请号：US13472314

申请日：2012-05-15

申请人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

发明人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC分类号： G11B5/31 ,  G11B5/465

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

摘要： An example magnetic recording head includes a main magnetic pole containing a ferromagnetic layer and a main magnetic pole-magnetization fixing portion containing an anti-ferromagnetic layer in contact with at least one side surface of the main magnetic pole. A heater for the main magnetic pole is configured so as to include an oxide layer with a metal path therein embedded in or provided in the vicinity of the main magnetic pole-magnetization fixing portion and a pair of electrodes, provided in the vicinity of the oxide layer, for flowing a current parallel to a surface of a recording medium through the metal path. A magnetic field generator generates a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

摘要翻译： 示例性的磁记录头包括含有铁磁层的主磁极和包含与主磁极的至少一个侧表面接触的反铁磁层的主磁极固定部分。 用于主磁极的加热器被构造成包括其中嵌入或设置在主磁极固定部分附近的金属路径的氧化物层和设置在氧化物附近的一对电极 层，用于通过金属路径流动平行于记录介质的表面的电流。 磁场发生器产生磁场，以便在一个方向上引导主磁极的磁化。

公开(公告)号：US08199443B2

公开(公告)日：2012-06-12

申请号：US12073491

申请日：2008-03-06

申请人： Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

发明人： Junichi Ito ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiro Fuji

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3932 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

摘要： A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.

摘要翻译： 磁阻效应元件包括：在一个方向上固定第一磁化的第一磁性层; 第二磁性层，其在一个方向上固定第二磁化强度; 位于第一磁性层和第二磁性层之间并由选自氧化物，氮化物，氧氮化物和金属中的至少一种构成的间隔层; 以及电位偏置产生部分，其位于与间隔层相邻的位置，用于向间隔层施加偏置磁场。