利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

115 条记录 (耗时 0.03 秒)

    X-RAY TUBE AND RADIATION IMAGING APPARATUS
    111.
    发明申请
    X-RAY TUBE AND RADIATION IMAGING APPARATUS 审中-公开
    X射线管和辐射成像装置

    公开(公告)号：US20120307974A1

    公开(公告)日：2012-12-06

    申请号：US13469305

    申请日：2012-05-11

    申请人： Koji Yamazaki ,  Ichiro Nomura ,  Shuji Aoki ,  Takao Ogura ,  Yasue Sato ,  Yoshihiro Yanagisawa ,  Kazuyuki Ueda ,  Miki Tamura

    发明人： Koji Yamazaki ,  Ichiro Nomura ,  Shuji Aoki ,  Takao Ogura ,  Yasue Sato ,  Yoshihiro Yanagisawa ,  Kazuyuki Ueda ,  Miki Tamura

    IPC分类号： H01J35/16 ,  G01N23/04

    CPC分类号： H01J35/16 ,  H01J35/06 ,  H01J35/08 ,  H01J35/116 ,  H01J2235/16

    摘要： An X-ray tube comprises: an envelope which has a cathode at one end and an anode at another end of a barrel of a tubular insulating tube and which has a sealed interior; an electron gun which is arranged inside the envelope and has a shape that protrudes from the cathode; and a target which is electrically connected to the anode and generates X-rays when being irradiated with electrons emitted from the electron gun. With reference to an end position that is a projection of a position of an end on the anode side of the electron gun onto an inner wall of the insulating tube, a mean wall thickness of the barrel is greater on the cathode side than on the anode side.

    摘要翻译： X射线管包括：在一端具有阴极的外壳和在管状绝缘管的筒的另一端的阳极，并具有密封的内部; 电子枪，其布置在封套内并具有从阴极突出的形状; 以及电子电连接到阳极并且当从电子枪发射的电子被照射时产生X射线的目标。 参考作为电子枪的阳极侧的端部的位置到绝缘管的内壁的端部位置，阴极侧的筒的平均壁厚比在阳极上的平均壁厚更大 侧。

    Optical semiconductor devices on InP substrate
    112.
    发明授权
    Optical semiconductor devices on InP substrate 有权
    InP衬底上的光学半导体器件

    公开(公告)号：US07772586B2

    公开(公告)日：2010-08-10

    申请号：US11500292

    申请日：2006-08-08

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Hitoshi Nakamura

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Hitoshi Nakamura

    IPC分类号： H01L33/00

    CPC分类号： H01S5/347 ,  B82Y20/00 ,  H01L31/0296 ,  H01L31/035236 ,  H01L33/06 ,  H01L33/28 ,  H01S5/0218 ,  H01S2304/02

    摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime.Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2 ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.

    摘要翻译： 本发明的目的在于提供一种结构，其中虽然其表现出正常的p型导电性，但载流子浓度小于1×10 7的材料，其中获得1×1017cm-3以上的高p型载流子浓度 仅获得1017厘米-3。 另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。 每个特定层，即每个ZnSe0.53Te0.47层（2ML）被插入在主层之间，即Mg0.5Zn0.29Cd0.21Se层（每层具有10ML（原子层）厚度），每层具有格子匹配 到InP衬底。 在这种情况下，当以适当的间隔插入单层时，获得其中1×10 18 cm -3以上的载流子浓度足够的每个特定层。 结果，在通常获得的空穴浓度小于1×1017cm-3的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上。