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    Electron-emitting device and method of manufacturing the same and display apparatus using the same
    112.
    发明申请
    Electron-emitting device and method of manufacturing the same and display apparatus using the same 有权
    电子发射器件及其制造方法以及使用其的显示装置

    公开(公告)号：US20010017369A1

    公开(公告)日：2001-08-30

    申请号：US09753722

    申请日：2001-01-04

    Inventor： Shingo Iwasaki ,  Takashi Yamada ,  Takuya Hata ,  Takashi Chuman ,  Nobuyasu Negishi ,  Kazuto Sakemura ,  Atsushi Yoshizawa ,  Hideo Satoh ,  Takamasa Yoshikawa ,  Kiyohide Ogasawara

    IPC: H01L021/00 ,  H01L029/06

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022

    Abstract: An electron-emitting device includes an electron source layer made of a metal, a metal alloy or a semiconductor, an insulating layer formed on the electron source layer and a metal thin film electrode formed on the insulating layer. Electrons are emitted upon application of an electric field between the electron source layer and the metal thin film electrode. The insulating layer has at least one island region which constitutes an electron-emitting section in which the film thickness of the insulating layer is gradually reduced. The electron-emitting device further includes a carbon region made of carbon or a carbon compound on at least one of a top, bottom and inside of the island region.

    Abstract translation: 电子发射器件包括由金属，金属合金或半导体制成的电子源层，形成在电子源层上的绝缘层和形成在绝缘层上的金属薄膜电极。 在电子源层和金属薄膜电极之间施加电场时发射电子。 绝缘层具有构成电绝缘层的膜厚逐渐降低的电子发射部的至少一个岛状区域。 电子发射器件还包括在岛区域的顶部，底部和内部中的至少一个上由碳或碳化合物制成的碳区域。

    Electron emission device and display using the same
    113.
    发明授权
    Electron emission device and display using the same 失效
    电子发射装置和显示器使用相同

    公开(公告)号：US6023125A

    公开(公告)日：2000-02-08

    申请号：US36747

    申请日：1998-03-09

    Applicant: Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

    Inventor： Takamasa Yoshikawa ,  Kiyohide Ogasawara ,  Hiroshi Ito

    IPC: H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L33/00 ,  H01J1/30

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2329/00

    Abstract: An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.

    Abstract translation: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。 绝缘体层是厚度为50纳米以上的电介质层，通过真空蒸镀法形成，层数为0.5〜100纳米/分钟。

    Electron emission device having peak intensity ratio characteristic of raman spectrum for fold ring of SiO.sub.2
    114.
    发明授权
    Electron emission device having peak intensity ratio characteristic of raman spectrum for fold ring of SiO.sub.2 失效
    具有SiO 2折叠环的拉曼光谱的峰值强度比特性的电子发射装置

    公开(公告)号：US5986390A

    公开(公告)日：1999-11-16

    申请号：US33980

    申请日：1998-03-03

    Applicant: Takashi Chuman ,  Takamasa Yoshikawa

    Inventor： Takashi Chuman ,  Takamasa Yoshikawa

    IPC: H01J1/312 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J2329/00

    Abstract: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an SiO.sub.2 insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The peak intensity ratio of a Raman spectrum for 3-fold rings of SiO.sub.2 of the insulator layer to 4-fold rings or 5 or more-fold rings thereof is equal to or greater than 20%. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.

    Abstract translation: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供给层，形成在电子供给层上的SiO 2绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘体层的3倍环的SiO 2与4倍环或5倍以上的环的拉曼光谱的峰强度比为20％以上。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

    Cathode body, electron gun, and cathode ray tube employing a ferroelectric emitter
    115.
    发明授权
    Cathode body, electron gun, and cathode ray tube employing a ferroelectric emitter 失效
    阴极体，电子枪和使用铁电发射体的阴极射线管

    公开(公告)号：US5874802A

    公开(公告)日：1999-02-23

    申请号：US777312

    申请日：1996-12-27

    Applicant: Jong-seo Choi ,  Kwi-seuk Choi ,  Kyu-nam Joo

    Inventor： Jong-seo Choi ,  Kwi-seuk Choi ,  Kyu-nam Joo

    IPC: H01J1/30 ,  H01J1/312 ,  H01J3/02 ,  H01J17/49 ,  H01J29/04 ,  H01J29/48 ,  H01J1/62

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J2201/306

    Abstract: A cathode, an electron gun, and a cathode ray tube include a ferroelectric electron source. The cathode includes a substrate; a lower electrode layer on the substrate; a cathode layer, on the lower electrode layer, the cathode layer including a ferroelectric emitter; an upper electrode layer, on the ferroelectric cathode layer, the upper electrode layer having electron emitting regions comprising a plurality of electron emission holes for passing electrons emitted from the ferroelectric emitter; and a driving electrode layer, supported by the upper electrode layer, for controlling passage of electrons through the electron emitting regions in the upper electrode layer and the driving electrode layer.

    Abstract translation: 阴极，电子枪和阴极射线管包括铁电电子源。 阴极包括基板; 基底上的下电极层; 阴极层，在所述下电极层上，所述阴极层包括铁电发射体; 上电极层，在铁电阴极层上，具有电子发射区的上电极层包括用于使从铁电发射体发射的电子的多个电子发射孔; 以及由上电极层支撑的用于控制电子通过上电极层和驱动电极层中的电子发射区的驱动电极层。

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