Silicon electro-optical modulator
    121.
    发明授权

    公开(公告)号:US09977269B2

    公开(公告)日:2018-05-22

    申请号:US15584509

    申请日:2017-05-02

    Inventor: Long Chen

    CPC classification number: G02F1/025 G02B6/00 G02B6/134 G02F2001/0156

    Abstract: Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

    SILICON DEPLETION MODULATORS WITH ENHANCED SLAB DOPING

    公开(公告)号:US20170248806A1

    公开(公告)日:2017-08-31

    申请号:US15455917

    申请日:2017-03-10

    CPC classification number: G02F1/025 G02F2001/0151

    Abstract: Disclosed herein are methods, structures, and devices for a silicon carrier-depletion based modulator with enhanced doping in at least part of slab regions between waveguide core and contact areas. Compared to prior designs, this modulator exhibits lower optical absorption loss and better modulation bandwidth without sacrificing the modulation efficiency when operating at comparable bandwidth settings.

    Adiabatic polarization rotation and splitting
    126.
    发明授权
    Adiabatic polarization rotation and splitting 有权
    绝热偏振旋转和分离

    公开(公告)号:US09523820B1

    公开(公告)日:2016-12-20

    申请号:US14797005

    申请日:2015-07-10

    Abstract: A photonic device comprising a first waveguide core and a second waveguide core. The first waveguide core is asymmetric relative to an imaginary plane that bisects a height of the first waveguide core and is parallel to the bottom surface of the first waveguide core throughout a first region of the photonic device. A side surface of the second waveguide core is parallel to the first waveguide core throughout the first region of the photonic device.

    Abstract translation: 一种光子器件,包括第一波导芯和第二波导芯。 第一波导芯相对于虚拟平面是不对称的,该虚平面在光子器件的整个第一区域中平分第一波导芯的高度并且平行于第一波导芯的底表面。 第二波导芯的侧表面在光子器件的整个第一区域平行于第一波导芯。

    HORIZONTAL COUPLING TO SILICON WAVEGUIDES
    128.
    发明申请
    HORIZONTAL COUPLING TO SILICON WAVEGUIDES 审中-公开
    水平耦合到硅波形

    公开(公告)号:US20160202421A1

    公开(公告)日:2016-07-14

    申请号:US14991311

    申请日:2016-01-08

    Inventor: Long Chen

    Abstract: Techniques for forming a facet optical coupler that includes a waveguide formed over a trench of a silicon substrate are described. The trench is formed in a silicon substrate and then filled with a dielectric material. The waveguide is patterned on the dielectric material over the trench such that the waveguide is disposed a distance from the first surface. A first end of the waveguide has a first size and a second end of the waveguide distal the first end has a second size different than the first size. A material of the waveguide and the first size define a mode size of the waveguide.

    Abstract translation: 描述了形成包括在硅衬底的沟槽上形成的波导的小面光耦合器的技术。 沟槽形成在硅衬底中,然后用电介质材料填充。 波导在沟槽上的电介质材料上图案化,使得波导与第一表面设置一段距离。 波导的第一端具有第一尺寸,并且第一端的远端的波导的第二端具有与第一尺寸不同的第二尺寸。 波导的材料和第一尺寸限定波导的模式尺寸。

    INTEGRATED POLARIZATION FILTER AND TAP COUPLER
    130.
    发明申请
    INTEGRATED POLARIZATION FILTER AND TAP COUPLER 有权
    集成极化滤波器和贴片耦合器

    公开(公告)号:US20150301280A1

    公开(公告)日:2015-10-22

    申请号:US14103678

    申请日:2013-12-11

    CPC classification number: G02B6/126 G02B2006/12147 G02B2006/1215 H04B10/60

    Abstract: Disclosed herein are methods, structures, apparatus and devices to integrate polarization filters and power tap couplers on planar photonic circuits that advantageously provide a lower insertion loss to an optical signal and improved optical bandwidth as compared with contemporary designs wherein these two functions are implemented separately.

    Abstract translation: 本文公开了将偏振滤光器和功率抽头耦合器集成在平面光子电路上的方法,结构,装置和装置,其有利地为光信号提供较低的插入损耗和改进的光学带宽,与其中分别实现这两个功能的当代设计相比。

Patent Agency Ranking