公开(公告)号：US06724989B1

公开(公告)日：2004-04-20

申请号：US10414029

申请日：2003-04-16

Applicant: Ching-Kun Lin ,  Yung-Chih Chen ,  Tien-Tzu Chen

Inventor： Ching-Kun Lin ,  Yung-Chih Chen ,  Tien-Tzu Chen

IPC: G03B726

CPC classification number: H05B41/32

Abstract: A camera strobe recharging IC includes a one-shot unit, an R-S latch block unit, a PWM control unit, and a ready control unit. The one-shot unit provides square wave signals. The R-S latch block unit is electrically connected with the one-shot unit. The PWM control unit includes a reference voltage source, an oscillator, a PWM comparator, a voltage boost comparator, and a current source. The ready control unit includes an FET, which has a gate contact electrically connected with an output contact of the R-S latch block unit. Accordingly, the present invention is compact and structurally tiny to facilitate integration and is good at modulating charging current, accelerating charging, and automatically recharging.

Abstract translation: 相机选通充电IC包括单触发单元，R-S锁存块单元，PWM控制单元和就绪控制单元。 单触发单元提供方波信号。 R-S锁存块单元与单触发单元电连接。 PWM控制单元包括参考电压源，振荡器，PWM比较器，升压比较器和电流源。 就绪控制单元包括FET，其具有与R-S锁存块单元的输出触点电连接的栅极触点。 因此，本发明的结构紧凑，结构小，便于集成，并且具有调制充电电流，加速​​充电和自动充电的优点。

公开(公告)号：US06716095B1

公开(公告)日：2004-04-06

申请号：US10338527

申请日：2003-01-08

Applicant: Chih-Hua Hsu ,  Kun-Lin Li

Inventor： Chih-Hua Hsu ,  Kun-Lin Li

IPC: B24B2300

CPC classification number: B24B55/052 ,  B24B23/02 ,  B24B41/04 ,  B25F5/02

Abstract: A surface dresser for removing contaminants includes a body assembly with a stationary seat and an adjustable assembly with a dressing wheel. The adjustable assembly is rotatably mounted on an outer periphery of the stationary seat. Two pairs of pin holes are defined in the stationary seat, and a flexible pin with two short ends is movably mounted in each pair of pin holes. A latch is slidably attached on the outer periphery of the stationary seat and has two clamping holes and two detents corresponding to two adjacent pin holes. When the adjustable assembly is rotated relative to the body assembly by a specific angle, the flexible pins selectively engage the clamping holes and the detents in the latch to lock the adjustable assembly. Consequently, the angle of the dressing wheel is adjustable to accommodate various requirements.

Abstract translation: 用于去除污染物的表面修整器包括具有静止座椅的主体组件和具有修整轮的可调组件。 可调组件可旋转地安装在固定座的外周上。 在固定座中限定了两对针孔，并且具有两个短端的柔性销可移动地安装在每对针孔中。 闩锁可滑动地附接在固定座的外周上，并且具有两个夹紧孔和对应于两个相邻销孔的两个棘爪。 当可调节组件相对于主体组件旋转特定角度时，柔性销选择性地接合夹紧孔和闩锁中的棘爪以锁定可调组件。 因此，修整轮的角度是可调节的以适应各种要求。

公开(公告)号：US06492240B1

公开(公告)日：2002-12-10

申请号：US09661701

申请日：2000-09-14

Applicant: Shyan-Yhu Wang ,  Kun-Lin Wu

Inventor： Shyan-Yhu Wang ,  Kun-Lin Wu

IPC: H01L2120

CPC classification number: H01L28/20 ,  H01L27/0629

Abstract: Performance of the high resistance resistor, which is polysilicon, is improved by treating the surface of the polysilicon layer in mixed signal integrated circuits for ADSL (Asymmetric Digital Subscriber Line) broadband service application. This treated surface of the polysilicon layer will prevent ions in the resistor from out-diffusion when performing an annealing step after forming the resistor.

Abstract translation: 通过在用于ADSL（非对称数字用户线）宽带服务应用的混合信号集成电路中处理多晶硅层的表面，改善了作为多晶硅的高电阻电阻的性能。 在形成电阻器之后，当执行退火步骤时，多晶硅层的该被处理表面将防止电阻器中的离子向外扩散。

公开(公告)号：US06382928B1

公开(公告)日：2002-05-07

申请号：US09722561

申请日：2000-11-28

Applicant: Kun-Lin Chang

Inventor： Kun-Lin Chang

IPC: F04B112

CPC classification number: F04B43/026 ,  F04B43/084 ,  F04B45/022 ,  F04B45/027

Abstract: An elaborately designed miniature air compressor is composed of a motor unit, a compression unit, and an air collection unit. Several bladders installed in the compression unit are sequentially actuated by a compression vane with a thrust and pulling force imparted from priston like motion caused by revolution of an eccentrically installed follower rod such that air is continuously supplied to the air collection unit and ejected out of an air output port uniformly, stably, and adequately. Besides, all component units of the miniature air pump are combined together by two shackles in stead of using latch pins.

Abstract translation: 精心设计的微型空气压缩机由电机单元，压缩单元和空气收集单元组成。 安装在压缩单元中的几个气囊由压缩叶片依次致动，其具有由偏心安装的从动杆的旋转引起的诸如此类运动所产生的推力和拉力，使得空气连续地供应到空气收集单元并从 空气输出口均匀，稳定，充分。 此外，微型气泵的所有组件单元通过两个钩环组合在一起，而不是使用闩锁销。

公开(公告)号：US06342135B1

公开(公告)日：2002-01-29

申请号：US08552245

申请日：1995-11-02

Applicant: Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

Inventor： Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

IPC: C23C1434

CPC classification number: H01J37/3244 ,  H01J37/34 ,  Y10T29/49

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

公开(公告)号：US06190995B1

公开(公告)日：2001-02-20

申请号：US09208282

申请日：1998-12-08

Applicant: Kun-Lin Wu ,  Cheng-Jung Hsu

Inventor： Kun-Lin Wu ,  Cheng-Jung Hsu

IPC: H01L2176

CPC classification number: H01L21/76224

Abstract: A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.

Abstract translation: 一种制造浅沟槽隔离的方法。 在基板上形成氧化硅层。 对氧化硅层进行构图，并且去除衬底的一部分以在衬底内形成沟槽。 衬垫氧化物层形成在沟槽的侧壁上。 在衬底上形成绝缘层并填充在沟槽中。 通过CMP去除绝缘层的一部分以暴露氧化硅层。 去除氧化硅层并完成STI结构。

公开(公告)号：US6120366A

公开(公告)日：2000-09-19

申请号：US225367

申请日：1999-01-04

Applicant: Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Edward Yang ,  Kun-Lin Wu ,  Fu-Yang Yu

Inventor： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Edward Yang ,  Kun-Lin Wu ,  Fu-Yang Yu

IPC: B24B37/26 ,  B24D13/12 ,  B24D13/14 ,  H01L21/304 ,  B23F21/03 ,  B24B1/00

CPC classification number: B24B37/26

Abstract: The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.

Abstract translation: 本发明提供了一种化学机械抛光垫，其包括多个环形槽和根据流体动力学原理设计的多条流线槽。 抛光垫的流线槽根据源流和涡流的流动方程设计，抛光垫的流线槽将浆料均匀分布在抛光垫上。 使用由流线槽功能的边界层效应计算的流线槽的角度和深度来设计抛光垫的最佳结构。

公开(公告)号：US6071806A

公开(公告)日：2000-06-06

申请号：US152921

申请日：1998-09-14

Applicant: Kun-Lin Wu ,  Horng-Bor Lu

Inventor： Kun-Lin Wu ,  Horng-Bor Lu

IPC: H01L21/3105 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76825 ,  H01L21/31058 ,  H01L21/76813 ,  H01L21/76831

Abstract: A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

Abstract translation: 一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法，该方法包括在开口之前的开口周围的暴露介电层的表面上进行诸如电子束工艺的致密化处理，该导电材料填充有导电材料 。 电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

公开(公告)号：US6060374A

公开(公告)日：2000-05-09

申请号：US090614

申请日：1998-06-04

Applicant: Cheng-Kun Lin ,  Szu-An Wu

Inventor： Cheng-Kun Lin ,  Szu-An Wu

IPC: H01L21/425

CPC classification number: H01L21/26506 ,  H01L21/28211 ,  H01L22/12

Abstract: Measurement of contaminating nitrogen during silicon ion implantation has been achieved by including a silicon wafer as a monitor in the implantation chamber. After silicon ion implantation, the monitor is subjected to a rapid thermal oxidation (about 1,100.degree. C. for one minute) and the thickness of the resulting grown oxide layer is measured. The thinner the oxide layer (relative to an oxide layer grown on pure silicon) the greater the degree of nitrogen contamination. For example, a reduction in oxide thickness of about 30 Angstroms corresponds to a nitrogen dosage of about 10.sup.13 atoms/sq. cm. By measuring total ion dosage during implantation and then subtracting the measured nitrogen dosage, the corrected silicon dosage may also be computed.

Abstract translation: 硅离子注入期间污染氮的测量已经通过将硅晶片作为监测器包括在注入室来实现。 在硅离子注入之后，将监测器进行快速热氧化（约1100℃1分钟），并测量所得生长的氧化物层的厚度。 氧化物层（相对于在纯硅上生长的氧化物层）越薄，氮污染程度越大。 例如，约30埃的氧化物厚度的减小对应于大约1013个原子/平方的氮剂量。 厘米。 通过测量植入期间的总离子剂量，然后减去测量的氮剂量，也可以计算校正的硅剂量。

公开(公告)号：US6030508A

公开(公告)日：2000-02-29

申请号：US83252

申请日：1998-05-20

Applicant: Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

Inventor： Chin-Shien Yang ,  Chuan-Huai Chen ,  Cheng-Kun Lin

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3244 ,  H01J37/34 ,  Y10T29/49

Abstract: The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

Abstract translation: 通过提供改进的气体挡板，在单晶片溅射蚀刻器中减少了材料去除的均匀性以及由于沉积的颗粒物质引起的污染。 所述气体挡板对进入的溅射气体呈现平滑的表面，使得其均匀地分散在整个溅射室中，从而避免局部的压力波动，这反过来可能导致材料去除速率的局部差异以及 被蚀刻的表面。 描述挡板的设计以及将其附接到溅射屏蔽件的内部的方法。