公开(公告)号：US08105648B2

公开(公告)日：2012-01-31

申请号：US12119493

申请日：2008-05-13

申请人： Chien-Hsin Lai ,  Tzu-Chin Tseng ,  Ying-Yi Chang

发明人： Chien-Hsin Lai ,  Tzu-Chin Tseng ,  Ying-Yi Chang

IPC分类号： C23C16/455

CPC分类号： C23C16/455

摘要： A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.

摘要翻译： 公开了一种用于操作化学沉积室的方法。 首先，提供数字液体流量控制器以将前体流体引导到化学沉积室中。 然后，在化学沉积室中进行预清洁步骤。 之后，对数字液体流量控制器执行预调节步骤，使得前体流体能够基本上稳定地被引导到化学沉积室中。 之后，化学沉积室用于进行化学沉积。

公开(公告)号：US06721628B1

公开(公告)日：2004-04-13

申请号：US09627865

申请日：2000-07-28

申请人： Chien-Hsin Lai ,  Juen-Kuen Lin ,  Huang-Yi Li ,  Kevin Yu

发明人： Chien-Hsin Lai ,  Juen-Kuen Lin ,  Huang-Yi Li ,  Kevin Yu

IPC分类号： G05B2100

CPC分类号： B24B37/04 ,  B24B49/003 ,  B24B57/02 ,  Y10T436/12

摘要： Polishing slurry is transported via piping to flow into the closed loop control system. First, the polishing slurry flows into the ultrasonic concentration detector. Original data of the polishing slurry that is determined by means of ultrasonic concentration detector is a fluid velocity at that time. This determined value can be converted into weight percent concentration at that time by memory data table. The converted data of weight percent concentration will be transmitted into program logic controller (PLC), and the data of liquid level volume in the distribution tank will be transmitted into program logic controller at present. The program logic controller will then analyze whether the quantity of oxidant is sufficient. If the quantity of oxidant does not reach the required criterion, the program logic controller will control the analog valve to transmit a supplementary quantity of oxidant into the distribution tank via the analog valve and piping.

摘要翻译： 抛光浆料通过管道输送进入闭环控制系统。 首先，研磨浆液流入超声波浓度检测器。 通过超声波浓度检测器确定的抛光浆料的原始数据是当时的流体速度。 该确定值可以通过存储器数据表转换成当时的重量百分比浓度。 重量百分比浓度的转换数据将传输到程序逻辑控制器（PLC）中，目前，分配罐中的液位体积数据将传输到程序逻辑控制器中。 然后，程序逻辑控制器将分析氧化剂的量是否足够。 如果氧化剂的量达不到要求的标准，程序逻辑控制器将控制模拟阀通过模拟阀和管道将补充的氧化剂传输到分配罐中。

公开(公告)号：US06676801B2

公开(公告)日：2004-01-13

申请号：US09845371

申请日：2001-04-30

申请人： Chien-Hsin Lai ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Fu-Yang Yu

发明人： Chien-Hsin Lai ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Fu-Yang Yu

IPC分类号： H01L21302

CPC分类号： B24B37/30 ,  B24B37/042 ,  B24B49/16 ,  H01L21/30625

摘要： A pressure suppression device for a chemical mechanical polishing machine. The chemical mechanical polishing machine includes a polishing table and a polishing head. The polishing table has a polishing pad and a polishing gas input through which a polishing gas is charged. The polishing head holds a wafer and has a wafer gas input through which a wafer gas is charged. The pressure suppression device has a pressure releasing component and a gas input tube coupled to the wafer gas input and the pressure releasing component. When a polishing pressure applied to the polishing pad is smaller than a wafer pressure applied to the wafer, the pressure releasing component releases a part of the wafer pressure until the wafer pressure is smaller than the polishing pressure. As a result, this prevents the wafer slippage or broken wafer that occur when the wafer is blown off from the polishing head by too much wafer pressure.

摘要翻译： 一种用于化学机械抛光机的压力抑制装置。 化学机械抛光机包括抛光台和抛光头。 抛光台具有抛光垫和抛光气体输入，通过该抛光气体输入抛光气体。 抛光头保持晶片并具有晶片气体输入，晶片气体通过晶片气体输入。 压力抑制装置具有联接到晶片气体输入端和压力释放部件的压力释放部件和气体输入管。 当施加到抛光垫的抛光压力小于施加到晶片的晶片压力时，压力释放组件释放晶片压力的一部分，直到晶片压力小于抛光压力。 结果，这防止了当晶片被太多的晶片压力从抛光头吹出时发生的晶片滑动或破碎的晶片。

公开(公告)号：US06293850B1

公开(公告)日：2001-09-25

申请号：US09426937

申请日：1999-10-22

申请人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Kun-Lin Wu ,  Daniel Chiu ,  Chih-Chiang Yang ,  Juan-Yuan Wu ,  Hao-Kuang Chiu

发明人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Kun-Lin Wu ,  Daniel Chiu ,  Chih-Chiang Yang ,  Juan-Yuan Wu ,  Hao-Kuang Chiu

IPC分类号： B24B100

CPC分类号： B24B37/32 ,  B24B37/042 ,  B24B57/02

摘要： A chemical mechanical polishing machine and a fabrication process using the same. The chemical mechanical polishing machine comprises a retainer ring having a plurality of slurry passages at the bottom of the retainer ring. The retainer ring further comprises a circular path. By conducting the slurry through the slurry passages and the circular, a wafer is planarized within the chemical mechanical polishing machine.

公开(公告)号：US06220930B1

公开(公告)日：2001-04-24

申请号：US09482936

申请日：2000-01-14

申请人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Chia-Jui Chang

发明人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Chia-Jui Chang

IPC分类号： B24B4900

CPC分类号： B24B37/30 ,  B24B37/32 ,  B24B49/16

摘要： A wafer polishing head for planarizing a wafer. The wafer polishing head comprises a carrier, a retaining ring, a first pressure chamber, a second pressure chamber and an automatic control system. The retaining ring is surrounding the carrier. The first pressure chamber having a first inner pressure is disposed above the retaining ring. The second pressure chamber having a second inner pressure is disposed on the carrier. The automatic control system is respectively coupled to the first pressure chamber and the second pressure chamber.

公开(公告)号：US6096162A

公开(公告)日：2000-08-01

申请号：US205561

申请日：1998-12-04

申请人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Chia-Jui Chang

发明人： Juen-Kuen Lin ,  Chien-Hsin Lai ,  Peng-Yih Peng ,  Chia-Jui Chang

IPC分类号： B24B27/00 ,  B24B37/04 ,  B24B57/02 ,  C23F1/02

CPC分类号： B24B37/04 ,  B24B27/0076 ,  B24B57/02

摘要： A CMP machine includes several polishing tables mounted on a carousel, which rotates in one direction. Each of the polishing tables includes a polishing pad. Each polishing pad can polish one wafer on its first surface. Each polishing pad also has one distributing duct used to supply slurry onto the polishing pad. An exhaust duct is included to exhaust slurry, in which the exhaust duct has a first end and a second end. The first end of the exhaust duct is coupled to slurry. A regulating valve is included to regulate slurry exhaust. An exhaust pump is included to produce a exhausting force of slurry. The exhaust pump is coupled to the second end of the exhaust duct. A regulating valve controller is included to control the regulating valve.

摘要翻译： CMP机器包括安装在沿一个方向旋转的转盘上的几个抛光台。 每个抛光台包括抛光垫。 每个抛光垫可以在其第一表面上抛光一个晶片。 每个抛光垫还具有用于将浆料供应到抛光垫上的一个分配管道。 包括排气管道以排出浆料，其中排气管道具有第一端和第二端。 排气管的第一端与浆料相连。 包括调节阀以调节浆料排气。 包括排气泵以产生浆料的排气力。 排气泵联接到排气管道的第二端。 包括一个调节阀控制器来控制调节阀。

公开(公告)号：US20070246062A1

公开(公告)日：2007-10-25

申请号：US11379227

申请日：2006-04-19

申请人： Chien-Hsin Lai ,  Chun-Yi Wang

发明人： Chien-Hsin Lai ,  Chun-Yi Wang

IPC分类号： B08B6/00 ,  B08B9/00

CPC分类号： C23C16/4405 ,  H01J37/32862

摘要： A process for cleaning a deposition chamber. The process includes feeding a fluorine-containing gas into the deposition chamber; maintaining the fluorine-containing gas in the deposition chamber at a first pressure; providing RF power to ignite plasma of the fluorine-containing gas within the deposition chamber; keeping the deposition chamber at a first temperature for a time period with the presence of the plasma; turning off the RF power to cease the plasma; and feeding a remote plasma containing free fluorine from a remote plasma source into the deposition chamber, without evacuating the deposition chamber, at the first temperature to clean interior surfaces of the deposition chamber.

摘要翻译： 一种用于清洁沉积室的方法。 该方法包括将含氟气体进料到沉积室中; 在第一压力下保持沉积室中的含氟气体; 提供RF功率以点燃沉积室内的含氟气体的等离子体; 在存在等离子体的同时将沉积室保持在第一温度一段时间; 关闭射频功率以停止等离子体; 以及将来自远程等离子体源的含有游离氟的远程等离子体输送到所述沉积室中，而不在所述第一温度下抽空所述沉积室以清洁所述沉积室的内表面。

公开(公告)号：US20050056369A1

公开(公告)日：2005-03-17

申请号：US10659258

申请日：2003-09-11

申请人： Chien-Hsin Lai ,  San-An Lin ,  Kuo-En Yen ,  Kuo-Uei Huang

发明人： Chien-Hsin Lai ,  San-An Lin ,  Kuo-En Yen ,  Kuo-Uei Huang

IPC分类号： C23C16/458 ,  C23C16/507 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32183 ,  C23C16/4586 ,  C23C16/507 ,  H01J37/32082 ,  Y10T279/23

摘要： A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.

摘要翻译： 能够进行自适应阻抗匹配的等离子体装置包括可产生等离子体以进行CVD（化学气相沉积）工艺的等离子体反应器，位于等离子体反应器内部并用于支撑和固定晶片的双极性静电卡盘， 连接到双极静电卡盘的交流偏压电源提供用于等离子体离子轰击的电压电位偏置，并且将用于将交流偏置电源连接到双极静电卡盘的阻抗匹配电路用于 平衡双极静电卡盘的内部电极功率输出和外部电极功率输出。

公开(公告)号：US06682399B1

公开(公告)日：2004-01-27

申请号：US09715656

申请日：2000-11-17

申请人： Chien-Hsin Lai ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Kevin Yu

发明人： Chien-Hsin Lai ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Kevin Yu

IPC分类号： B24B4900

CPC分类号： B24B37/30 ,  B24B49/16 ,  G05D16/2026

摘要： A pressure monitoring system arranged in a close loop circuit, intended to facilitate chemical mechanical polishing (CMP), is disclosed. The pressure monitoring circuit includes an air regulator, a pressure transducer, a pressure difference transducer and a pressure difference regulator. This hardware is equipped to facilitate finding three control parameters of the monitoring system—polishing pressure (Pp), pressure difference of the polishing pressure and a corresponding wafer pressure (Dp), and deviation of the output pressure difference from a set point pressure difference (Cp). By monitoring Pp, Dp and Cp, air streams in a CMP process can be effectively regulated on a real time basis and the troubleshooting procedure for the system hardware can be practically reduced.

摘要翻译： 公开了一种布置在闭环回路中的压力监测系统，旨在促进化学机械抛光（CMP）。 压力监测电路包括空气调节器，压力传感器，压差传感器和压力差调节器。 该硬件配备有助于找到监控系统的三个控制参数 - 抛光压力（Pp），抛光压力的压差和相应的晶片压力（Dp），以及输出压力差与设定点压力差的偏差（ Cp）。 通过监控Pp，Dp和Cp，可以实时有效地调节CMP过程中的气流，实际降低系统硬件的故障排除步骤。

公开(公告)号：US06648729B2

公开(公告)日：2003-11-18

申请号：US10172308

申请日：2002-06-14

申请人： Chien-Hsin Lai ,  Cheng-Chi Hsieh ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Fu-Yang Yu

发明人： Chien-Hsin Lai ,  Cheng-Chi Hsieh ,  Jung-Nan Tseng ,  Huang-Yi Lin ,  Fu-Yang Yu

IPC分类号： B25B5100

CPC分类号： B24B37/005 ,  B24B49/16

摘要： A controlled pressure regulation system generates the wafer-pressing pressures during a polishing operation. A wafer carrier head holds a wafer to be polished against a platen. A first and second pressure regulators respectively generate a first and second pressure onto the platen and the wafer carrier head to press the wafer to be polished. A first and second controllers are respectively connected to the first and second pressure regulators in control feedback loops to control the generation of the first and second pressures. The first and second pressures are controlled to obtain a desired difference of pressure between the first and second pressure.