COOLING SYSTEM FOR PANEL ARRAY ANTENNA
    121.
    发明申请
    COOLING SYSTEM FOR PANEL ARRAY ANTENNA 有权
    面板阵列天线冷却系统

    公开(公告)号:US20110122033A1

    公开(公告)日:2011-05-26

    申请号:US12623302

    申请日:2009-11-20

    IPC分类号: H01Q1/28 H01Q1/00

    摘要: The present invention relates to panel array antennas, and more particularly to a cooling system for an antenna such as a jet stream conformal panel array antenna. In one embodiment, a panel array antenna for an aircraft includes a closed-loop fluid flow path that passes through the panel array assembly and dissipates heat to the jet stream outside the aircraft. A fluid such as pressurized air passes through this closed-loop path, flowing through strategically-placed openings in the layers of the panel array assembly and flowing over and around the hot electrical components in the panel assembly. The air is heated by these electrical components, and the heated air then flows through the flow path under the top sheet, dissipating the heat to the jet stream outside. In one embodiment, a panel array antenna includes a panel assembly having a top layer through which the antenna radiates or receives a signal, and a fluid flow path through the panel assembly. A first portion of the fluid flow path is disposed below the top layer such that a fluid passing through the first portion of the fluid flow path is in heat transfer proximity to the top layer.

    摘要翻译: 本发明涉及面板阵列天线,更具体地说,涉及一种用于天线的冷却系统,例如喷流保形面阵列天线。 在一个实施例中,用于飞行器的面板阵列天线包括通过面板阵列组件并将热量散发到飞机外部的喷射流的闭环流体流动路径。 诸如加压空气的流体通过该闭环路径,流过面板阵列组件的层中的策略性放置的开口并且流过并围绕面板组件中的热电气部件。 空气被这些电气部件加热,然后加热的空气流过顶片下方的流动路径,将热量散发到外部的喷射流。 在一个实施例中,面板阵列天线包括具有天线辐射或接收信号的顶层的面板组件和通过面板组件的流体流动路径。 流体流动路径的第一部分设置在顶层下方,使得流过流体流路的第一部分的流体热传递到顶层附近。

    Carryable Bag for Large Objects
    122.
    发明申请
    Carryable Bag for Large Objects 有权
    大型物品携带袋

    公开(公告)号:US20090322109A1

    公开(公告)日:2009-12-31

    申请号:US12552022

    申请日:2009-09-01

    IPC分类号: B65G7/12 B65D33/08

    CPC分类号: B65D33/065 B65D2585/647

    摘要: A device for moving, carrying and storing large objects includes a bag comprising a sheet of plastic film material. The bag is sized to receive the object and has an opening for placing the object into the bag. The bag has an extension on at least one side the bag with at least one handle formed as an opening in the extension. The extension includes more than two layers of the plastic film material, which can be in the form of a gusset. The bag includes a seal for bonding the more than two layers of the film material together along at least a portion of the length of the side having the extension thereon.

    摘要翻译: 用于移动,携带和存储大物体的装置包括包括塑料薄膜材料片的袋。 该袋的尺寸适于接收物体并具有用于将物体放置在袋中的开口。 袋子至少在一侧具有延伸部,该袋子具有在延伸部中形成为开口的至少一个把手。 该延伸部包括两层以上的塑料薄膜材料,其可以是角撑板的形式。 袋子包括用于沿着具有在其上延伸的一侧的长度的至少一部分将两层以上的薄膜材料粘合在一起的密封件。

    Carryable bag for large objects
    123.
    发明授权
    Carryable bag for large objects 有权
    大型物品的可携带袋

    公开(公告)号:US07585007B2

    公开(公告)日:2009-09-08

    申请号:US11176888

    申请日:2005-07-07

    IPC分类号: B65G7/12 B65D33/08

    CPC分类号: B65D33/065 B65D2585/647

    摘要: A carrier for large objects includes a bag made of a sheet of plastic film material. The bag is sized to receive a large object and has an opening for placing the object into the bag. An extension on at least one side of the bag has a plurality of layers of the plastic film material formed with a gusset. Handles are formed as openings in the extension. The bag has a seal for bonding the layers of film together along at least a portion of the length of the side having the extension. The seal is formed along a line between an outer edge of the gusset and an inner edge of the gusset.

    摘要翻译: 用于大物体的载体包括由塑料薄膜材料制成的袋。 该袋的尺寸适于接收大的物体并且具有用于将物体放置在袋中的开口。 袋的至少一侧上的延伸部具有形成有角撑板的多层塑料薄膜材料。 手柄形成为延伸部中的开口。 袋具有用于沿着具有延伸部的侧面的长度的至少一部分将膜层粘合在一起的密封件。 密封沿着角撑板的外边缘和角撑板的内边缘之间的线形成。

    Process method to facilitate silicidation
    124.
    发明授权
    Process method to facilitate silicidation 有权
    硅化方法

    公开(公告)号:US07448395B2

    公开(公告)日:2008-11-11

    申请号:US10894374

    申请日:2004-07-19

    摘要: The present invention substantially removes dry etch residue from a dry plasma etch process 110 prior to depositing a cobalt layer 124 on silicon substrate and/or polysilicon material. Subsequently, one or more annealing processes 128 are performed that cause the cobalt to react with the silicon thereby forming cobalt silicide regions. The lack of dry etch residue remaining between the deposited cobalt and the underlying silicon permits the cobalt silicide regions to be formed substantially uniform with a desired silicide sheet and contact resistance. The dry etch residue is substantially removed by performing a first cleaning operation 112 and then an extended cleaning operation 114 that includes a suitable cleaning solution. The first cleaning operation typically removes some, but not all of the dry etch residue. The extended cleaning operation 114 is performed at a higher temperature and/or for an extended duration and substantially removes dry etch residue remaining after the first cleaning operation 112.

    摘要翻译: 本发明在将钴层124沉积在硅衬底和/或多晶硅材料上之前基本上从干等离子体蚀刻工艺110去除干蚀刻残留物。 随后,进行一个或多个退火工艺128,其使钴与硅反应,从而形成硅化钴区域。 残留在沉积的钴和下面的硅之间的干蚀刻残留物的缺乏允许用期望的硅化物片和接触电阻基本上均匀地形成硅化钴区域。 通过执行第一清洁操作112,然后进行包括合适的清洁溶液的延长清洁操作114,基本上去除了干蚀刻残留物。 第一次清洁操作通常去除一些但不是全部的干蚀刻残留物。 延长的清洁操作114在更高的温度和/或延长的持续时间内进行,并且基本上去除了在第一清洁操作112之后残留的干蚀刻残留物。

    Power ok distribution for multi-voltage chips
    126.
    发明申请
    Power ok distribution for multi-voltage chips 有权
    Power电压分配多电压芯片

    公开(公告)号:US20070250721A1

    公开(公告)日:2007-10-25

    申请号:US11408226

    申请日:2006-04-20

    IPC分类号: G06F1/00

    CPC分类号: G06F1/28

    摘要: A method and apparatus for powering up an integrated circuit (IC). An IC includes a plurality of power domains each coupled to receive power from one of a plurality of power sources. Each power domain includes a power-sensing unit. A power-sensing unit in a first one of the plurality of power domains is coupled to receive a first power ok signal from an upstream power domain, and is configured to assert a second power ok signal to be provided to a second power domain. A power-sensing unit in the second power domain is coupled to detect the presence of voltage in the first power domain, and to receive the first power ok signal. When the power-sensing unit in the second power domain has both sensed the presence of power in the first power domain and received the second power ok signal, a third power ok signal is asserted.

    摘要翻译: 一种用于为集成电路(IC)供电的方法和装置。 IC包括多个功率域,每个功率域被耦合以从多个电源之一接收功率。 每个功率域包括功率感测单元。 多个功率域中的第一个功率区中的功率感测单元被耦合以从上游功率域接收第一功率ok信号,并且被配置为断言要提供给第二功率域的第二功率ok信号。 耦合第二功率域中的功率感测单元以检测第一功率域中的电压的存在并接收第一功率ok信号。 当第二功率域中的功率感测单元已经感测到在第一功率域中存在功率并且接收到第二功率ok信号时,断言第三功率确认信号。