Abstract:
Memory device having a tile architecture are disclosed. The memory device may include a first plane having multiple pairs of tiles, wherein at least some of the pairs of tiles of the first plane include a distributed block select circuit and page buffer circuitry. Another memory device may include a memory array, and a CMOS under array region. At least some tile regions may include portions of a total amount of block select circuitry distributed throughout the CUA region, vertical string drivers located outside of the memory array, and page buffer circuitry coupled with the memory array. Another memory device may include a first tile pair including a first tile, a second tile, a first vertical string driver therebetween, a first page buffer region that is greater than 50% of area for the first tile pair, and a first portion of a distributed block select circuitry.
Abstract:
A system includes a plurality of sensing devices, a first multiplexer, a plurality of local return clock signal paths, a second multiplexer, and a data latch. Each sensing device outputs data onto a respective local data path in response to a clock signal on a clock signal path. The first multiplexor passes data from a selected local data path to a global data path. Each local return clock signal path is coupled to the clock signal path at a respective sensing device such that each local return clock signal path is routed along with a respective local data path. The second multiplexor passes a return clock signal from a selected local return clock signal path corresponding to the selected local data path to a global return clock signal path. The data latch latches the data on the global data path into the data latch in response to the return clock signal on the global return clock signal path.
Abstract:
Apparatuses and methods for reducing capacitance on a data bus are disclosed herein. In accordance with one or more described embodiments, an apparatus may comprise a plurality of memories coupled to an internal data bus and a command and address bus, each of the memories configured to receive a command on the command and address bus. One of the plurality of memories may be coupled to an external data bus. The one of the plurality of memories may be configured to provide program data to the internal data bus when the command comprises a program command and another of the plurality of memories is a target memory of the program command and may be configured to provide read data to the external data bus when the command comprises a read command and the another of the plurality of memories is a target memory of the read command.