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公开(公告)号:US10917057B2
公开(公告)日:2021-02-09
申请号:US16654640
申请日:2019-10-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hidetoshi Matsumoto , Satoshi Tanaka , Masatoshi Hase
Abstract: A power amplifier circuit includes a first transistor, wherein a radio frequency signal is inputted to a base or gate of the first transistor; a second transistor having an emitter connected to a collector or drain of the first transistor, wherein a first voltage is supplied to a collector of the second transistor, and a first amplified signal obtained by amplifying the radio frequency signal is outputted from the collector of the second transistor; and a third transistor configured to supply a bias voltage to a base of the second transistor. A second voltage is supplied to a collector or drain of the third transistor, a third voltage corresponding to the first voltage is supplied to a base or gate of the third transistor, and the bias voltage, which corresponds to the third voltage, is supplied from an emitter or source of the third transistor.
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公开(公告)号:US10855235B2
公开(公告)日:2020-12-01
申请号:US16227189
申请日:2018-12-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Takayuki Tsutsui , Satoshi Tanaka , Yasuhisa Yamamoto
Abstract: A power amplifier circuit amplifies a radio-frequency signal in a transmit frequency band. The power amplifier circuit includes an amplifier, a bias circuit, and an impedance circuit. The amplifier amplifies power of a radio-frequency signal and outputs an amplified signal. The impedance circuit is connected between a signal input terminal of the amplifier and a bias-current output terminal of the bias circuit and has frequency characteristics in which attenuation is obtained in the transmit frequency band. The impedance circuit includes first and second impedance circuits. The first impedance circuit is connected to the signal input terminal. The second impedance circuit is connected between the first impedance circuit and the bias-current output terminal.
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公开(公告)号:US10855232B2
公开(公告)日:2020-12-01
申请号:US16190861
申请日:2018-11-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Shigeki Koya , Takayuki Tsutsui , Yasunari Umemoto , Isao Obu , Satoshi Tanaka
Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.
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公开(公告)号:US20200280286A1
公开(公告)日:2020-09-03
申请号:US16878111
申请日:2020-05-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenichi Shimamoto , Satoshi Tanaka , Tadashi Matsuoka
Abstract: A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
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公开(公告)号:US10693421B2
公开(公告)日:2020-06-23
申请号:US16240868
申请日:2019-01-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenichi Shimamoto , Satoshi Tanaka , Tadashi Matsuoka
Abstract: A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
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公开(公告)号:US10594341B2
公开(公告)日:2020-03-17
申请号:US16274391
申请日:2019-02-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tsuyoshi Sato , Hidetoshi Matsumoto , Kiichiro Takenaka , Masahiro Ito , Satoshi Tanaka
Abstract: A high-frequency-signal transceiver circuit transmits and receives a signal between first to sixth antenna terminals and terminals near a high-frequency circuit. The high-frequency-signal transceiver circuit includes first to sixth circuits connected to the corresponding first to sixth antenna terminals. One of the first to sixth circuits transmits and receives only a signal of time division multiplexing communication.
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公开(公告)号:US20190158039A1
公开(公告)日:2019-05-23
申请号:US16190861
申请日:2018-11-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Shigeki Koya , Takayuki Tsutsui , Yasunari Umemoto , Isao Obu , Satoshi Tanaka
Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.
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公开(公告)号:US10211783B2
公开(公告)日:2019-02-19
申请号:US15629146
申请日:2017-06-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Kenichi Shimamoto , Satoshi Tanaka , Tadashi Matsuoka
Abstract: A power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
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公开(公告)号:US20190028074A1
公开(公告)日:2019-01-24
申请号:US16038770
申请日:2018-07-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tsuyoshi Sato , Hidetoshi Matsumoto , Kiichiro Takenaka , Masahiro Ito , Satoshi Tanaka , Takahiro Katamata
CPC classification number: H03F3/245 , H03F3/195 , H03F3/211 , H03F3/4508 , H03F2200/294
Abstract: A communication unit includes a first input terminal to which a first transmission signal based on a first communication standard is input, a second input terminal to which a second transmission signal based on a second communication standard is input, a first transmission signal amplifier circuit outputting a first amplified transmission signal, or outputting a second amplified transmission signal, a first input-output terminal outputting the first amplified transmission signal or the second amplified transmission signal, and at least one of a first reception signal and a second reception signal inputted to the first input-output terminal, a first reception signal amplifier circuit performing at least one of operation of outputting a first amplified reception signal and operation of outputting a second amplified reception signal, a first output terminal outputting the first amplified reception signal, and a second output terminal outputting the second amplified reception signal.
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公开(公告)号:US10177724B2
公开(公告)日:2019-01-08
申请号:US15600993
申请日:2017-05-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Satoshi Tanaka , Kazuo Watanabe , Takayuki Tsutsui , Masao Kondo , Satoshi Arayashiki , Fumio Harima , Masatoshi Hase
IPC: H03F3/04 , H03F3/24 , H03F1/02 , H03F1/56 , H03F3/00 , H03F3/195 , H03F3/21 , H04L5/00 , H04L5/14 , H03F1/22 , H04W88/00
Abstract: A power amplifier circuit includes first and second transistors and a first voltage output circuit. A radio frequency signal is input into a base of the first transistor. The first voltage output circuit outputs a first voltage in accordance with a power supply voltage. The first voltage is supplied to a base or a gate of the second transistor. An emitter or a source of the second transistor is connected to a collector of the first transistor. A first amplified signal generated by amplifying the radio frequency signal is output from a collector or a drain of the second transistor.
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