-
公开(公告)号：US20140042570A1
公开(公告)日：2014-02-13
申请号：US14045055
申请日：2013-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC: H01L43/02
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。
-
公开(公告)号：US11839163B2
公开(公告)日：2023-12-05
申请号：US17717362
申请日：2022-04-11
Applicant: SONY CORPORATION
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
-
公开(公告)号：US11349067B2
公开(公告)日：2022-05-31
申请号：US17106539
申请日：2020-11-30
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
-
公开(公告)号：US11257516B2
公开(公告)日：2022-02-22
申请号：US16783420
申请日：2020-02-06
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Hiroyuki Uchida , Yutaka Higo , Hiroyuki Ohmori , Kazuhiro Bessho , Masanori Hosomi
IPC: H01L27/105 , H01L43/08 , G11B5/39 , H01L43/10 , H01L27/22 , H01F10/30 , G11C11/16 , H01L29/82 , G11C11/15 , H01F10/32
Abstract: The present technology relates to a storage device that realizes both a high information retention property and a low power consumption. A storage device includes a fixed layer, a storage layer, an intermediate layer, and a heat generation layer. The fixed layer includes a first ferromagnetic layer that includes a fixed perpendicular magnetization. The storage layer includes a second ferromagnetic layer that includes a perpendicular magnetization invertible by a spin injection. The intermediate layer is formed of an insulator and is arranged between the storage layer and the fixed layer. The heat generation layer is formed of a resistance heating element and is arranged in at least one of the storage layer and the fixed layer. With this configuration, it becomes possible to provide a storage device that realizes both a high information retention property and a low power consumption.
-
公开(公告)号：US10971175B2
公开(公告)日：2021-04-06
申请号：US16874007
申请日：2020-05-14
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11B5/31 , H01F10/32 , G11B5/39 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00 , G11C11/16
Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
-
Patent Agency Ranking
公开(公告)号：US20210083177A1
公开(公告)日：2021-03-18
申请号：US17106539
申请日：2020-11-30
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
-
公开(公告)号：US20200168262A1
公开(公告)日：2020-05-28
申请号：US16777222
申请日：2020-01-30
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
-
公开(公告)号：US10665775B2
公开(公告)日：2020-05-26
申请号：US16166761
申请日：2018-10-22
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida , Tetsuya Asayama
Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.
-
公开(公告)号：US10475989B2
公开(公告)日：2019-11-12
申请号：US16156736
申请日：2018-10-10
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
-
公开(公告)号：US10217501B2
公开(公告)日：2019-02-26
申请号：US15942258
申请日：2018-03-30
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.
-
-
-
-
-
-
-
-
-
Search Results
154
records
(took 0.021 seconds)
