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公开(公告)号：US20220238797A1
公开(公告)日：2022-07-28
申请号：US17717362
申请日：2022-04-11
Applicant: SONY CORPORATION
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US11322681B2
公开(公告)日：2022-05-03
申请号：US16732969
申请日：2020-01-02
Applicant: SONY CORPORATION
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US09774016B2
公开(公告)日：2017-09-26
申请号：US14422835
申请日：2013-08-01
Applicant: Sony Corporation
Inventor： Hiroshi Kano
IPC: H01M2/10 , H01M10/04 , H01M2/14 , H01M2/18 , B60L3/00 , B60L11/00 , B60L11/18 , H01M10/052 , H01M10/42
CPC classification number: H01M2/1005 , B60L3/0007 , B60L11/007 , B60L11/1842 , B60L11/1879 , B60L2200/12 , H01M2/1077 , H01M2/1094 , H01M2/14 , H01M2/18 , H01M10/0422 , H01M10/052 , H01M10/4257 , H01M2220/10 , H01M2220/20 , Y02E60/721 , Y02T10/7005 , Y02T10/705 , Y02T10/7072 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y04S10/126
Abstract: A battery pack includes: a plurality of battery cells (1); a cell support that holds the plurality of battery cells; a connection part (6) that connects to the plurality of battery cells; and a circuit substrate (8) that is used to mount circuits for the plurality of battery cells. The cell support (2) is integrally formed with battery cell storage units (3) that store the plurality of battery cells, a base unit (4) that supports the battery cell storage units, and impact relaxation ribs (21), and each of the impact relaxation ribs is formed between an outer circumference of the base unit and an exterior surface of each of the battery cell storage units, and is configured in a shape capable of being transformed in a direction to which impact is applied.
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公开(公告)号：US20160141491A1
公开(公告)日：2016-05-19
申请号：US15007382
申请日：2016-01-27
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。
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公开(公告)号：US09293692B2
公开(公告)日：2016-03-22
申请号：US14017779
申请日：2013-09-04
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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Patent Agency Ranking
公开(公告)号：US09287493B2
公开(公告)日：2016-03-15
申请号：US14045055
申请日：2013-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。
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公开(公告)号：US20140042570A1
公开(公告)日：2014-02-13
申请号：US14045055
申请日：2013-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
IPC: H01L43/02
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。
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公开(公告)号：US10566523B2
公开(公告)日：2020-02-18
申请号：US16150874
申请日：2018-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US20190036019A1
公开(公告)日：2019-01-31
申请号：US16150874
申请日：2018-10-03
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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公开(公告)号：US10128436B2
公开(公告)日：2018-11-13
申请号：US15933512
申请日：2018-03-23
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Kazuhiro Bessho , Tetsuya Yamamoto , Hiroyuki Ohmori , Kazutaka Yamane , Yuki Oishi , Hiroshi Kano
Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.
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