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公开(公告)号:US20210028355A1
公开(公告)日:2021-01-28
申请号:US17060299
申请日:2020-10-01
Applicant: TDK CORPORATION
Inventor: Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
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公开(公告)号:US20210028354A1
公开(公告)日:2021-01-28
申请号:US17000481
申请日:2020-08-24
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Tatsuo SHIBATA , Katsuyuki NAKADA , Yoshitomo TANAKA
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.
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公开(公告)号:US20200273511A1
公开(公告)日:2020-08-27
申请号:US16795876
申请日:2020-02-20
Applicant: TDK CORPORATION
Inventor: Takuya ASHIDA , Tomoyuki SASAKI , Tatsuo SHIBATA
Abstract: A magnetic domain wall movement element includes a first ferromagnetic layer, a magnetic recording layer, a nonmagnetic layer, a first electrode, and a second electrode. The magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in a first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region. An area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode. The first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.
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公开(公告)号:US20200243752A1
公开(公告)日:2020-07-30
申请号:US16756262
申请日:2019-02-12
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI
Abstract: This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.
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125.
公开(公告)号:US20200160900A1
公开(公告)日:2020-05-21
申请号:US16751318
申请日:2020-01-24
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.
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公开(公告)号:US20200083433A1
公开(公告)日:2020-03-12
申请号:US16565884
申请日:2019-09-10
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Tatsuo SHIBATA
Abstract: A reservoir element of the first aspect of the present disclosure includes: a spin conduction layer containing a non-magnetic conductor; ferromagnetic layers positioned in a first direction with respect to the spin conduction layer and spaced apart from each other in a plan view from the first direction; and via wirings electrically connected to spin conduction layer on a surface opposite to a surface with the ferromagnetic layers.
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127.
公开(公告)号:US20200083430A1
公开(公告)日:2020-03-12
申请号:US16288317
申请日:2019-02-28
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI , Yohei SHIOKAWA , Minoru SANUKI
Abstract: Provided are a spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit torque wiring and a first ferromagnetic layer laminated on the spin-orbit torque wiring in a first direction, wherein the spin-orbit torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.
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公开(公告)号:US20200075073A1
公开(公告)日:2020-03-05
申请号:US16506270
申请日:2019-07-09
Applicant: TDK CORPORATION
Inventor: Tomoyuki SASAKI
Abstract: A spin current magnetization rotational magnetic element in which magnetization can be rotated without applying an external magnetic field, power saving and a degree of integration can be enhanced. The spin current magnetization rotational magnetic element includes a spin-orbit torque wiring in a first direction; a first ferromagnetic layer in a second direction, a magnetization direction of the first ferromagnetic layer being configured to change; and a spin injection layer which is in contact with a surface of the spin-orbit torque wiring on a side opposite to the first ferromagnetic layer side and laminated in the second direction, in which the magnetization direction of the first ferromagnetic layer is a Z direction and the magnetization direction of the spin injection layer is an X direction in the first direction.
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公开(公告)号:US20190267541A1
公开(公告)日:2019-08-29
申请号:US16082483
申请日:2018-02-28
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: In the method for stabilizing a spin element according to an aspect of the disclosure, the spin element includes a current-carrying part extending in a first direction, and an element part laminated on one surface of the current-carrying part and including a ferromagnetic material, in the case where the environmental temperature is a predetermined temperature, a pulse current having a current density of 1.0×107 A/cm2 or more and 1.0×109 A/cm2 or less and a pulse width within a predetermined range is applied at least a predetermined number of times in the first direction of the current-carrying part at intervals of a predetermined waiting time.
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公开(公告)号:US20190267064A1
公开(公告)日:2019-08-29
申请号:US16082456
申请日:2018-02-28
Applicant: TDK CORPORATION
Inventor: Yohei SHIOKAWA , Tomoyuki SASAKI
Abstract: In the method for stabilizing a spin element according to an aspect of the disclosure, the spin element includes a current-carrying part extending in a first direction, and an element part laminated on one surface of the current-carrying part and including a ferromagnetic material, a current pulse having a predetermined current value or higher is applied at a predetermined temperature in the first direction of the current-carrying part such that a total pulse application time is equal to or longer than a predetermined time.
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