MAGNETORESISTANCE EFFECT ELEMENT
    121.
    发明申请

    公开(公告)号:US20210028355A1

    公开(公告)日:2021-01-28

    申请号:US17060299

    申请日:2020-10-01

    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.

    MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC RECORDING ARRAY

    公开(公告)号:US20200273511A1

    公开(公告)日:2020-08-27

    申请号:US16795876

    申请日:2020-02-20

    Abstract: A magnetic domain wall movement element includes a first ferromagnetic layer, a magnetic recording layer, a nonmagnetic layer, a first electrode, and a second electrode. The magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in a first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region. An area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode. The first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.

    SPIN ELEMENT AND MAGNETIC MEMORY
    124.
    发明申请

    公开(公告)号:US20200243752A1

    公开(公告)日:2020-07-30

    申请号:US16756262

    申请日:2019-02-12

    Inventor: Tomoyuki SASAKI

    Abstract: This spin element includes: a current-carrying part that extends in a first direction; and an element part that is laminated on one surface of the current-carrying part, wherein the current-carrying part includes a first wiring and a second wiring in order from a side of the element part, and wherein both of the first wiring and the second wiring are metals and temperature dependence of resistivity of the first wiring is larger than temperature dependence of resistivity of the second wiring in at least a temperature range of −40° C. to 100° C.

    SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY

    公开(公告)号:US20200160900A1

    公开(公告)日:2020-05-21

    申请号:US16751318

    申请日:2020-01-24

    Abstract: A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.

    RESERVOIR ELEMENT AND NEUROMORPHIC ELEMENT
    126.
    发明申请

    公开(公告)号:US20200083433A1

    公开(公告)日:2020-03-12

    申请号:US16565884

    申请日:2019-09-10

    Abstract: A reservoir element of the first aspect of the present disclosure includes: a spin conduction layer containing a non-magnetic conductor; ferromagnetic layers positioned in a first direction with respect to the spin conduction layer and spaced apart from each other in a plan view from the first direction; and via wirings electrically connected to spin conduction layer on a surface opposite to a surface with the ferromagnetic layers.

    SPIN-ORBIT-TORQUE MAGNETIZATION ROTATIONAL ELEMENT AND SPIN-ORBIT-TORQUE MAGNETORESISTANCE EFFECT ELEMENT

    公开(公告)号:US20200083430A1

    公开(公告)日:2020-03-12

    申请号:US16288317

    申请日:2019-02-28

    Abstract: Provided are a spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit torque wiring and a first ferromagnetic layer laminated on the spin-orbit torque wiring in a first direction, wherein the spin-orbit torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

    METHOD FOR STABILIZING SPIN ELEMENT AND METHOD FOR MANUFACTURING SPIN ELEMENT

    公开(公告)号:US20190267541A1

    公开(公告)日:2019-08-29

    申请号:US16082483

    申请日:2018-02-28

    Abstract: In the method for stabilizing a spin element according to an aspect of the disclosure, the spin element includes a current-carrying part extending in a first direction, and an element part laminated on one surface of the current-carrying part and including a ferromagnetic material, in the case where the environmental temperature is a predetermined temperature, a pulse current having a current density of 1.0×107 A/cm2 or more and 1.0×109 A/cm2 or less and a pulse width within a predetermined range is applied at least a predetermined number of times in the first direction of the current-carrying part at intervals of a predetermined waiting time.

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