公开(公告)号：US20180166442A1

公开(公告)日：2018-06-14

申请号：US15838451

申请日：2017-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ta Yu ,  Sheng-Chen Wang ,  Cheng-Yu Yang ,  Kai-Hsuan Lee ,  Sai-Hooi Yeong ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/08

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L29/0847

Abstract: A FinFET device is provided. The FinFET device includes a plurality of fin structures that protrude upwardly out of a dielectric isolation structure. The FinFET device also includes a plurality of gate structures that partially wrap around the fin structures. The fin structures each extend in a first direction, and the gate structures each extend in a second direction different from the first direction. An epitaxial structure is formed over at least a side surface of each of the fin structures. The epitaxial structure includes: a first epi-layer, a second epi-layer, or a third epi-layer. The epitaxial structure formed over each fin structure is separated from adjacent epitaxial structures by a gap. A silicide layer is formed over each of the epitaxial structures. The silicide layer at least partially fills in the gap. Conductive contacts are formed over the silicide layer.

公开(公告)号：US09953836B2

公开(公告)日：2018-04-24

申请号：US14607971

申请日：2015-01-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Yao Wen ,  Sheng-Chen Wang ,  Sai-Hooi Yeong ,  Hsueh-Chang Sung ,  Ya-Yun Cheng

IPC: H01L27/092 ,  H01L21/265 ,  H01L21/8238 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/84 ,  H01L27/12 ,  H01L29/10 ,  H01L21/324 ,  H01L29/04 ,  H01L29/06 ,  H01L29/161 ,  H01L27/088 ,  H01L29/78

CPC classification number: H01L21/26513 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/1033 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/161 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an anti-punch through implant (APT) region formed in the fin structure and a barrier layer formed on the APT region. The barrier layer has a middle portion and a peripheral portion, and the middle portion is higher than the peripheral portion. The FinFET device structure further includes an epitaxial layer formed on the barrier layer.