公开(公告)号：US20130095616A1

公开(公告)日：2013-04-18

申请号：US13275337

申请日：2011-10-18

Applicant: Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

Inventor： Shih-Hung Tsai ,  Chien-Liang Lin ,  Chien-Ting Lin ,  Ssu-I Fu ,  Ying-Tsung Chen

IPC: H01L21/336

CPC classification number: H01L29/66795

Abstract: A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer.

Abstract translation: 一种制造多栅极晶体管器件的方法包括：提供具有图案化半导体层，栅极电介质层和顺序地形成在其上的栅极层的半导体衬底，形成依次具有第一绝缘层和第二绝缘层的覆盖层 图案化半导体层和栅极层，去除多个绝缘层的一部分以同时在栅极层周围形成第一间隔物，以及围绕图案化半导体层形成第二间隔物，去除第二间隔物以暴露第一绝缘层的一部分 覆盖图案化的半导体层并且同时移除第一间隔物的一部分以形成围绕栅极层的第三间隔物，以及去除暴露的第一绝缘层以暴露图案化的半导体层。

公开(公告)号：US08404535B2

公开(公告)日：2013-03-26

申请号：US13304409

申请日：2011-11-25

Applicant: Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

Inventor： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Cheng-Hsien Chou ,  Tian-Fu Chiang ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC: H01L21/28

CPC classification number: H01L29/6656 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

Abstract translation: 公开了一种用于制造金属栅极晶体管的方法。 首先，提供具有第一晶体管区域和第二晶体管区域的衬底。 接下来，在基板上形成层叠膜，其中层叠膜包括至少一个高k电介质层和第一金属层。 图案化层叠的膜以在第一晶体管区域和第二晶体管区域中形成多个栅极，在栅极上形成电介质层，并且介电层的一部分被平坦化，直到到达每个栅极的顶部。 第一金属层从第二晶体管区域的栅极去除，并且第二金属层形成在电介质层的表面上，每个栅极用于在第一晶体管区域和第二晶体管区域中形成多个金属栅极。

公开(公告)号：US20120256276A1

公开(公告)日：2012-10-11

申请号：US13082387

申请日：2011-04-07

Applicant: Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

Inventor： Guang-Yaw Hwang ,  Chun-Hsien Lin ,  Hung-Ling Shih ,  Jiunn-Hsiung Liao ,  Zhi-Cheng Lee ,  Shao-Hua Hsu ,  Yi-Wen Chen ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Chien-Ting Lin ,  Tong-Jyun Huang ,  Jie-Ning Yang ,  Tsung-Lung Tsai ,  Po-Jui Liao ,  Chien-Ming Lai ,  Ying-Tsung Chen ,  Cheng-Yu Ma ,  Wen-Han Hung ,  Che-Hua Hsu

IPC: H01L29/78 ,  H01L21/3205

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/7846

Abstract: A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Abstract translation: 提供一种制造金属栅极的方法。 该方法包括提供基板。 然后，在基板上形成栅极电介质层。 在栅极电介质层上形成具有功函数金属层的多层堆叠结构。 在多层堆叠结构的至少一层上进行O2气氛处理。 在多层堆叠结构上形成导电层。

公开(公告)号：US20120244669A1

公开(公告)日：2012-09-27

申请号：US13053223

申请日：2011-03-22

Applicant: Po-Jui Liao ,  Tsung-Lung Tsai ,  Chien-Ting Lin ,  Shao-Hua Hsu ,  Yi-Wei Chen ,  Hsin-Fu Huang ,  Tzung-Ying Lee ,  Min-Chuan Tsai ,  Chan-Lon Yang ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Guang-Yaw Hwang ,  Chia-Lin Hsu ,  Jie-Ning Yang ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Zhi-Cheng Lee ,  Hung-Ling Shih ,  Po-Cheng Huang ,  Yi-Wen Chen ,  Che-Hua Hsu

Inventor： Po-Jui Liao ,  Tsung-Lung Tsai ,  Chien-Ting Lin ,  Shao-Hua Hsu ,  Yi-Wei Chen ,  Hsin-Fu Huang ,  Tzung-Ying Lee ,  Min-Chuan Tsai ,  Chan-Lon Yang ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Guang-Yaw Hwang ,  Chia-Lin Hsu ,  Jie-Ning Yang ,  Cheng-Guo Chen ,  Jung-Tsung Tseng ,  Zhi-Cheng Lee ,  Hung-Ling Shih ,  Po-Cheng Huang ,  Yi-Wen Chen ,  Che-Hua Hsu

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/823807 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract translation: 本发明提供一种制造具有金属栅极的半导体器件的方法。 首先，提供基板。 具有第一牺牲栅极的第一导电型晶体管和具有第二牺牲栅极的第二导电型晶体管设置在衬底上。 去除第一牺牲栅极以形成第一沟槽。 然后，在第一沟槽中形成第一金属层。 去除第二牺牲栅极以形成第二沟槽。 接下来，在第一沟槽和第二沟槽中形成第二金属层。 最后，在第二金属层上形成第三金属层，其中第三金属层被填充到第一沟槽和第二沟槽中。

公开(公告)号：USD661834S1

公开(公告)日：2012-06-12

申请号：US29396858

申请日：2011-07-07

Applicant: Chien-Ting Lin

Designer： Chien-Ting Lin

公开(公告)号：US08193050B2

公开(公告)日：2012-06-05

申请号：US12907016

申请日：2010-10-18

Applicant: Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

Inventor： Chih-Hao Yu ,  Li-Wei Cheng ,  Che-Hua Hsu ,  Tian-Fu Chiang ,  Cheng-Hsien Chou ,  Chien-Ming Lai ,  Yi-Wen Chen ,  Chien-Ting Lin ,  Guang-Hwa Ma

IPC: H01L21/8238

CPC classification number: H01L27/11

Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

Abstract translation: 公开了一种制造半导体结构的方法。 提供具有第一晶体管的衬底，其具有第一虚拟栅极和具有第二虚拟栅极的第二晶体管。 第一晶体管和第二晶体管的导电类型不同。 同时去除第一和第二伪栅极以形成相应的第一和第二开口。 在基板上形成高k电介质层，第二导电层和第一低电阻导电层，并填充第一和第二开口，第一低电阻导电层填充第二开口。 第一开口中的第一低电阻导电层和第二导电层被去除。 然后在第一开口中形成第一导电层和第二低电阻导电层，第二低电阻导电层填充第一开口。

公开(公告)号：US08190303B2

公开(公告)日：2012-05-29

申请号：US12338006

申请日：2008-12-18

Applicant: Chung-Hsiung Lin ,  Chien-Ting Lin

Inventor： Chung-Hsiung Lin ,  Chien-Ting Lin

IPC: G06F19/00 ,  G05D23/00 ,  F28F27/00

CPC classification number: H05K7/207 ,  G05D23/1932 ,  G06F1/206 ,  G06F2200/201 ,  H01L23/34 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a particular embodiment, a system to dissipate heat in an information handling system includes a first heat-generating component adapted to process first data and a second heat-generating component adapted to process second data. The system also includes a cooling fluid guide including an electroactive material. The cooling fluid guide is adapted to change from a first shape to a second shape, in response to receiving a trigger voltage or in response to no longer receiving the trigger voltage. The system also includes a controller adapted to detect a data load processed at the second heat-generating component and, in response to detecting the data load, to cause the trigger voltage to be received at, or no longer received at, the cooling fluid guide. The cooling fluid guide is adapted to direct an increased portion of cooling fluid toward the first heat-generating component when the cooling fluid guide is in a form of the second shape, as compared to the first shape.

Abstract translation: 在特定实施例中，在信息处理系统中散热的系统包括适于处理第一数据的第一发热组件和适于处理第二数据的第二发热组件。 该系统还包括包括电活性材料的冷却流体引导件。 响应于接收到触发电压或响应于不再接收到触发电压，冷却流体引导件适于从第一形状变化到第二形状。 该系统还包括控制器，适于检测在第二发热部件处理的数据负载，并且响应于检测到数据负载，使得触发电压在冷却流体导向件处接收或不再接收 。 与第一形状相比，当冷却流体引导件处于第二形状的形式时，冷却流体引导件适于将增加的冷却流体部分引向第一发热部件。

公开(公告)号：US20120026717A1

公开(公告)日：2012-02-02

申请号：US13191587

申请日：2011-07-27

Applicant: CHIEN-TING LIN

Inventor： CHIEN-TING LIN

IPC: G03B15/02

CPC classification number: G03B15/06

Abstract: A photographic reflector includes an engagement unit, a support frame, a fabric canopy, and a lamp holder. The engagement unit includes an engagement seat and an engagement member moveably mounted in the engagement seat. The support frame includes a plurality of ribs and a plurality of stretchers corresponding to each respective rib. One end of each rib is pivotally connected to the engagement seat. One end of each stretcher is pivotally connected to a preset location of the corresponding rib, and the other end of each stretcher is pivotally connected to the engagement member. The fabric canopy is mounted on the ribs of the support frame and has a reflective layer at an inside thereof and a mounting hole defined at a location close to the engagement unit. The lamp holder is mounted in the mounting hole of the fabric canopy. The photographic reflector can be folded as compactly as desired, easily stored, and convenient in transportation and use.

Abstract translation: 照相反射器包括接合单元，支撑框架，织物罩和灯座。 接合单元包括接合座和可移动地安装在接合座中的接合构件。 支撑框架包括多个肋和对应于每个相应的肋的多个担架。 每个肋的一端枢转地连接到接合座。 每个拉伸器的一端枢转地连接到相应肋的预定位置，并且每个拉伸器的另一端枢转地连接到接合构件。 织物顶篷安装在支撑框架的肋上，并且在其内侧具有反射层，并且在靠近接合单元的位置处限定安装孔。 灯架安装在织物罩的安装孔中。 照相反射体可按要求紧凑地折叠，容易储存，便于运输和使用。

公开(公告)号：US20120014744A1

公开(公告)日：2012-01-19

申请号：US13183407

申请日：2011-07-14

Applicant: CHIEN-TING LIN

Inventor： CHIEN-TING LIN

IPC: F16C11/10

CPC classification number: F16M11/06 ,  F16C11/10 ,  F16M11/10 ,  F16M13/022 ,  F16M2200/024 ,  Y10T403/32319

Abstract: A support head assembly includes a main body, a tooth disk unit, a tooth disk cap, a button, a button cap, and a spring. The tooth disk cap and the button cap are assembled on the main body. Two ends of the spring are respectively secured on a securing post of the tooth disk unit and a securing post of the tooth disk cap, and abutted against therebetween, such that a tooth disk of the tooth disk unit is engaged with a first tooth slot of the main body and a second tooth slot of the tooth disk cap. The tooth disk of the tooth disk unit can be disengaged from the first tooth slot of the main body and fully received in the second tooth slot of the tooth disk cap by pressing the button and further the tooth disk unit to compress the spring, so as to allow the support head assembly to be made angle adjustment according to the desires.

Abstract translation: 支撑头组件包括主体，齿盘单元，齿盘盖，按钮，按钮帽和弹簧。 齿盘盖和按钮盖组装在主体上。 弹簧的两端分别固定在齿盘单元的固定柱和齿盘盖的固定柱上并抵靠在其间，使得齿盘单元的齿盘与第一齿槽 主体和齿盘盖的第二齿槽。 齿盘单元的齿盘可以与主体的第一齿槽脱离，并且通过按压按钮并且进一步地使齿盘单元压缩弹簧而完全容纳在齿盘盖的第二齿槽中，以便 以允许支撑头组件根据需要进行角度调节。

公开(公告)号：US20120001038A1

公开(公告)日：2012-01-05

申请号：US13175827

申请日：2011-07-02

Applicant: CHIEN-TING LIN

Inventor： CHIEN-TING LIN

IPC: F16M11/38

CPC classification number: F16M11/242

Abstract: Provided is a tripod structure of a stand, which is combined on a central post of the stand and allows the leg units of the stand to be folded, and includes: an upper tripod unit having a central post orifice and at least three leg unit connection parts evenly arranged at the outer periphery of the central post and formed with at least an accessory part, wherein the upper tripod unit is fastened at a preset location of the central post of the stand via the central post orifice, and each leg unit of the stand is respectively hinged with each leg unit connection part; and a lower tripod unit having a post plug and at least three moveable support rod connection parts evenly arranged at the outer periphery of the post plug, and each moveable support rod connection part is correspondingly formed with a leg unit buckling part and formed with at least an accessory part, wherein the post plug is installed at the distal end of the central post of the stand, and hinged to the leg unit and the moveable support rod connection part through a support rod, such that the leg units can be folded and respectively buckled with each corresponding leg unit buckling part.

Abstract translation: 提供了一种支架的三脚架结构，其组合在支架的中心柱上并且允许支架的腿单元折叠，并且包括：上三脚架单元，其具有中心柱孔和至少三个腿单元连接 部分均匀地布置在中心柱的外周并形成有至少一个附件部分，其中上三脚架单元经由中心柱孔紧固在支架的中心柱的预设位置处，并且每个支腿单元 支架分别与每个支腿单元连接部分铰接; 以及具有柱塞的下三脚架单元和在柱塞的外周均匀布置的至少三个可移动的支撑杆连接部分，并且每个可移动的支撑杆连接部分相应地形成有腿单元屈曲部分并至少形成 附件部分，其中柱塞安装在支架的中心柱的远端，并且通过支撑杆铰接到腿单元和可移动的支撑杆连接部分，使得腿单元可分别折叠 与每个相应的腿部屈曲部分扣合。