公开(公告)号：US20090015782A1

公开(公告)日：2009-01-15

申请号：US11827625

申请日：2007-07-12

Applicant: Brian Yi ,  Eun Kyung Lee ,  Gene Huh

Inventor： Brian Yi ,  Eun Kyung Lee ,  Gene Huh

IPC: G02F1/13 ,  H01J9/24

CPC classification number: G02F1/133308 ,  G02F2001/133302 ,  G02F2201/503 ,  G02F2202/28

Abstract: A ruggedized, high brightness, liquid crystal display (LCD) unit having a thin display panel, a front cover glass faceplate and an improved backlight assembly is disclosed. The faceplate is bonded to the panel using an improved process to minimize panel deformation and the backlight assembly is configured with an array of selectively spaced light emitting diodes (LED's) adapted to provide a uniform high brightness display with a minimal quantity of LED's.

Abstract translation: 公开了具有薄显示面板，前盖玻璃面板和改进的背光组件的坚固耐用的高亮度液晶显示器（LCD）单元。 面板使用改进的工艺结合到面板上以最小化面板变形，并且背光组件配置有适于提供具有最少量LED的均匀高亮度显示的选择性间隔开的发光二极管（LED）的阵列。

公开(公告)号：US20080309234A1

公开(公告)日：2008-12-18

申请号：US11933306

申请日：2007-10-31

Applicant: KYUNG SANG CHO ,  BYOUNG LYONG CHOI ,  SANG JUN CHOI ,  EUN KYUNG LEE

Inventor： KYUNG SANG CHO ,  BYOUNG LYONG CHOI ,  SANG JUN CHOI ,  EUN KYUNG LEE

IPC: H01J1/62

CPC classification number: H05B33/145 ,  H05B33/22

Abstract: An alternating current driving type quantum dot electroluminescent device includes; a first electrode, a second electrode, a quantum dot light-emitting layer disposed between the first electrode and the second electrode, and at least one layer selected from the group consisting of a tunneling layer, a bipolar layer, a dielectric layer, an insulating layer, and a combination of layers thereof, disposed between at least one of the first electrode and the quantum dot light-emitting layer, and the second electrode and the quantum dot light-emitting layer.

Abstract translation: 交流驱动型量子点电致发光器件包括： 第一电极，第二电极，设置在第一电极和第二电极之间的量子点发光层，以及选自隧道层，双极层，电介质层，绝缘体中的至少一个层 层及其层的组合，设置在第一电极和量子点发光层中的至少一个之间，以及第二电极和量子点发光层。

公开(公告)号：US20080197345A1

公开(公告)日：2008-08-21

申请号：US11976127

申请日：2007-10-22

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang Yoon Lee

IPC: H01L51/50 ,  B05D3/00 ,  C08F26/06 ,  H01L51/40

CPC classification number: C08F212/32 ,  C08F212/14 ,  H01L51/0036 ,  H01L51/052 ,  C08F222/36 ,  C08F2222/404

Abstract: Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

Abstract translation: 本文公开了共聚物，其可以包括侧链，其可以降低绝缘层的表面能，从而改善半导体材料的对准，以及包括具有增加的交联度的光反应性官能团的侧链，从而改善 使用其制造的有机薄膜晶体管的特征，包括共聚物的有机绝缘层组合物，有机绝缘层，有机薄膜晶体管，包含该共聚物的有机绝缘层组合物，包含其的电子器件及其制造方法。 根据实施例的共聚物，可以降低绝缘层的表面能，从而可以提高半导体材料的取向，从而提高阈值电压和电荷迁移率，并减少驱动时滞后的产生 晶体管。

公开(公告)号：USD571844S1

公开(公告)日：2008-06-24

申请号：US29285668

申请日：2007-04-05

Applicant: Eun-kyung Lee ,  Seung-seup Yoo ,  Sung-hwa Chang

Designer： Eun-kyung Lee ,  Seung-seup Yoo ,  Sung-hwa Chang

公开(公告)号：US20080099758A1

公开(公告)日：2008-05-01

申请号：US11790755

申请日：2007-04-27

Applicant: Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

Inventor： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

IPC: H01L51/00 ,  H01L51/40

CPC classification number: H01L51/0036 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C09K11/06 ,  C09K2211/1458 ,  C09K2211/1466 ,  H01L51/0545 ,  H05B33/14

Abstract: Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

Abstract translation: 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。

公开(公告)号：US07354871B2

公开(公告)日：2008-04-08

申请号：US11506091

申请日：2006-08-17

Applicant: Eun Kyung Lee ,  Byoung Lyong Choi

Inventor： Eun Kyung Lee ,  Byoung Lyong Choi

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L33/18 ,  Y10S977/70 ,  Y10S977/762

Abstract: Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be uniformly disposed in the nanowires, and nanowires having various physical properties can be produced by controlling the size and interval of the nanodots. Therefore, the nanowires can be effectively used in a variety of applications, including electronic devices, such as field effect transistors (FETs), sensors, photodetectors, light emitting diodes (LEDs), and laser diodes (LDs).

Abstract translation: 提供了制备纳米线的纳米线方法。 纳米线包括均匀地设置在其中的多个金属纳米点和芯部分，其中多个金属纳米点中的每一个耦合到芯部分。 根据该方法，金属纳米点可以均匀地设置在纳米线中，并且可以通过控制纳米点的尺寸和间隔来制造具有各种物理性质的纳米线。 因此，纳米线可以有效地用于各种应用中，包括诸如场效应晶体管（FET），传感器，光电检测器，发光二极管（LED）和激光二极管（LD）的电子器件。

公开(公告)号：US20080076872A1

公开(公告)日：2008-03-27

申请号：US11706985

申请日：2007-02-16

Applicant: Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

Inventor： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

IPC: C08L41/00

CPC classification number: C08L65/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

Abstract translation: 示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物 有机半导体薄膜的形成，从而增加pi-pi堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用该薄膜的有机电子器件。 使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

公开(公告)号：US20080067505A1

公开(公告)日：2008-03-20

申请号：US11783136

申请日：2007-04-06

Applicant: Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

Inventor： Eun Kyung Lee ,  Joo Young Kim ,  Sang Yoon Lee ,  Jung Seok Hahn

IPC: H01L51/30 ,  C08G65/38 ,  H01L51/40

CPC classification number: H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31678

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract translation: 公开了一种组合物，其包含其中将具有增加的交联度的光反应性官能团引入侧链的有机绝缘聚合物，包含该组合物的有机绝缘膜，包含有机绝缘体的有机薄膜晶体管（OTFT） 膜，包括有机薄膜晶体管的电子器件和制造有机绝缘膜，有机薄膜晶体管和电子器件的方法。 包含示例性实施例的有机绝缘膜的OTFT在驱动OTFT期间可能不显示任何滞后，因此可以表现出均匀的性质。

公开(公告)号：US20080067503A1

公开(公告)日：2008-03-20

申请号：US11655181

申请日：2007-01-19

Applicant: Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Eun Kyung Lee ,  Sang-Yoon Lee ,  Bang Lin Lee

IPC: H01L51/10 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/052 ,  C08G61/124 ,  C08G73/0611 ,  H01L51/0545

Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

Abstract translation: 公开了具有侧链的绝缘有机聚合物，其能够形成具有降低的表面能的高疏水性绝缘层。 使用绝缘性有机聚合物形成的有机绝缘层的表面能的降低可能导致半导体材料的取向度的增加。 因此，绝缘有机聚合物可用于制造具有改进的特性的有机薄膜晶体管，例如降低的阈值电压和增加的电荷载流子迁移率。 还公开了使用绝缘聚合物形成的有机绝缘层，包括该绝缘层的有机薄膜晶体管及其制造方法，以及包含该有机薄膜晶体管的电子器件。

公开(公告)号：US07276298B2

公开(公告)日：2007-10-02

申请号：US10998821

申请日：2004-11-30

Applicant: Soo-hyoung Lee ,  Yi-yeol Lyu ,  Eun-kyung Lee ,  Tae-yong Noh

Inventor： Soo-hyoung Lee ,  Yi-yeol Lyu ,  Eun-kyung Lee ,  Tae-yong Noh

IPC: H01L51/54 ,  C09K11/06 ,  H05B33/12

CPC classification number: H01L51/0035 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/5096 ,  H01L2251/308 ,  Y10S428/917

Abstract: The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.

Abstract translation: 本发明涉及包含胺衍生物物质的有机电致发光器件的中间层，其可以进一步包含能够形成交联的官能团。 特别地，该物质可以具有优异的溶解性并且可以容易地形成为薄膜。 具体地说，薄膜在溶剂中可以是稳定的，并且可以容易地形成为各种厚度。 此外，可以根据空穴传输材料的特性容易地控制带隙和LUMO / HOMO值，从而可以形成具有期望特性的中间层。 因此，引入使用本发明的物质制造的中间层作为中间层可以产生具有高效率和更长寿命的有机电致发光器件。