公开(公告)号：US11626278B2

公开(公告)日：2023-04-11

申请号：US17211452

申请日：2021-03-24

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Zeqing Shen ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

公开(公告)号：US11621226B2

公开(公告)日：2023-04-04

申请号：US17171432

申请日：2021-02-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/455 ,  C23C16/26 ,  H10B69/00 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US20230090280A1

公开(公告)日：2023-03-23

申请号：US17483273

申请日：2021-09-23

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a low dielectric constant material defining one or more features, a liner extending across the low dielectric constant material and within the one or more features, and a metal-containing layer deposited on the liner and extending within the one or more features. The methods may include forming a layer of material on at least a portion of the liner and the metal-containing layer. The layer of material may include graphene. The methods may include removing substantially all of the portion of the layer of material on the liner.

公开(公告)号：US11545354B2

公开(公告)日：2023-01-03

申请号：US16935385

申请日：2020-07-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Bhuyan ,  Zeqing Shen ,  Bo Qi ,  Abhijit Basu Mallick ,  Xinke Wang ,  Mark Saly

IPC: H01L21/02 ,  B05D1/00

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

公开(公告)号：US11515149B2

公开(公告)日：2022-11-29

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: C23C16/22 ,  H01L21/02 ,  H01L21/762

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US20220375750A1

公开(公告)日：2022-11-24

申请号：US17324352

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

公开(公告)号：US20220165566A1

公开(公告)日：2022-05-26

申请号：US16953569

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC: H01L21/02

Abstract: Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

公开(公告)号：US11332376B2

公开(公告)日：2022-05-17

申请号：US16922083

申请日：2020-07-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Samuel E. Gottheim ,  Pramit Manna ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C01B32/28 ,  H01L21/308 ,  C01B32/26 ,  H01L21/311 ,  C01B32/25 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505

Abstract: Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

公开(公告)号：US20220093390A1

公开(公告)日：2022-03-24

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

公开(公告)号：US20220068643A1

公开(公告)日：2022-03-03

申请号：US17007441

申请日：2020-08-31

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Gu Jiteng ,  Eswaranand Venkatasubramanian ,  Loh Kian Ping ,  Abhijit Basu Mallick ,  John Sudijono ,  Zhongxin Chen

IPC: H01L21/033 ,  H01L27/11556

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.