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公开(公告)号:US20210065785A1
公开(公告)日:2021-03-04
申请号:US16555899
申请日:2019-08-29
Applicant: Arm Limited
IPC: G11C11/419 , G11C11/418 , H03K5/24
Abstract: Various implementations described herein are directed to a device having various circuitry for reading first data from a memory location in single-port memory and writing second data to the memory location in the single-port memory after reading the first data from the memory location. In some implementations, reading the first data and writing the second data to the memory location are performed in a single operation.
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公开(公告)号:US20200342937A1
公开(公告)日:2020-10-29
申请号:US16397960
申请日:2019-04-29
Applicant: Arm Limited
Inventor: Andy Wangkun Chen , Yew Keong Chong
IPC: G11C11/419
Abstract: Various implementations described herein are directed to circuitry having a bitcell array with bitcells arranged in columns and rows. The circuitry includes bitlines coupled to the columns of the bitcells and wordlines coupled to the rows of the bitcells. The bitcells are arranged in multiple groups of bitcells along corresponding wordlines in each row, and each group of bitcells in each row is configured to be shifted by at least one column with respect to another group of bitcells in a previous row.
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公开(公告)号:US10817420B2
公开(公告)日:2020-10-27
申请号:US16175151
申请日:2018-10-30
Applicant: Arm Limited
Inventor: Yew Keong Chong , Sriram Thyagarajan , Andy Wangkun Chen
Abstract: A method for accessing two memory locations in two different memory arrays based on a single address string includes determining three sets of address bits. A first set of address bits are common to the addresses of wordlines that correspond to the memory locations in the two memory arrays. A second set of address bits concatenated with the first set of address bits provides the address of the wordline that corresponds to a first memory location in a first memory array. A third set of address bits concatenated with the first set of address bits provides the address of the wordline that corresponds to a second memory location in a second memory array. The method includes populating the single address string with the three sets of address bits and may be performed by an address data processing unit.
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公开(公告)号:US10756753B2
公开(公告)日:2020-08-25
申请号:US16170723
申请日:2018-10-25
Applicant: Arm Limited
Inventor: Shardendu Shekhar , Andy Wangkun Chen , Yew Keong Chong
Abstract: A compressor includes a logic circuit having transistors of a first channel type to receive a plurality of bit signals, and transistors of a second channel type, different from the first channel type, to receive the plurality of bit signals. The transistors of the first channel type are configured to generate an XOR logic output based on the plurality of bit signals, and the transistors of the second channel type are configured to generate, substantially simultaneous with the generation of the XOR logic output, an XNOR logic output based on the plurality of bit signals. The compressor includes NAND gates to receive multiplicand and multiplier bit signals.
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公开(公告)号:US20200133850A1
公开(公告)日:2020-04-30
申请号:US16175151
申请日:2018-10-30
Applicant: Arm Limited
Inventor: Yew Keong Chong , Sriram Thyagarajan , Andy Wangkun Chen
Abstract: A method for accessing two memory locations in two different memory arrays based on a single address string includes determining three sets of address bits. A first set of address bits are common to the addresses of wordlines that correspond to the memory locations in the two memory arrays. A second set of address bits concatenated with the first set of address bits provides the address of the wordline that corresponds to a first memory location in a first memory array. A third set of address bits concatenated with the first set of address bits provides the address of the wordline that corresponds to a second memory location in a second memory array. The method includes populating the single address string with the three sets of address bits and may be performed by an address data processing unit.
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公开(公告)号:US10535386B2
公开(公告)日:2020-01-14
申请号:US15603252
申请日:2017-05-23
Applicant: ARM Limited
Inventor: Andy Wangkun Chen , Yew Keong Chong , Rahul Mathur , Abhishek Baradia , Hsin-Yu Chen
Abstract: Various implementations described herein refer to an integrated circuit having level shifting circuitry and bypass switching circuitry. The level shifting circuitry is arranged for translating an input signal from a first voltage domain to an output signal for a second voltage domain. The bypass switching circuitry is arranged for activating and deactivating the level shifting circuitry based on a bypass control signal.
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公开(公告)号:US20190058475A1
公开(公告)日:2019-02-21
申请号:US15682327
申请日:2017-08-21
Applicant: ARM Limited
Inventor: Andy Wangkun Chen , Cagla Cakir
IPC: H03K19/0185 , H03K19/0944 , G11C5/14 , G11C7/10 , H03K3/356 , H03K17/16 , H03K3/0233
Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include level shifting circuitry for translating an input signal from a first voltage domain to an output signal for a second voltage domain. The integrated circuit may include input logic circuitry for receiving multiple input signals and providing an inverted input signal to the level shifting circuitry based on the multiple input signals. The integrated circuit may include bypass switching circuitry for activating and deactivating the level shifting circuitry based on a bypass control signal and at least one of the multiple input signals.
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公开(公告)号:US20180331681A1
公开(公告)日:2018-11-15
申请号:US16042949
申请日:2018-07-23
Applicant: ARM Limited
Inventor: Lalit Gupta , Vivek Nautiyal , Andy Wangkun Chen , Jitendra Dasani , Bo Zheng , Akshay Kumar , Vivek Asthana
CPC classification number: H03K17/223 , G11C5/148
Abstract: Various implementations described herein are directed to a circuit. The circuit may include a memory circuit having a first latch. The circuit may include a power-on-reset circuit having a second latch coupled to the first latch. The second latch may be configured to reset the first latch to a predetermined state at power-up.
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公开(公告)号:US10033376B2
公开(公告)日:2018-07-24
申请号:US15143197
申请日:2016-04-29
Applicant: ARM Limited
Inventor: Lalit Gupta , Vivek Nautiyal , Andy Wangkun Chen , Jitendra Dasani , Bo Zheng , Akshay Kumar , Vivek Asthana
Abstract: Various implementations described herein are directed to a circuit. The circuit may include a memory circuit having a first latch. The circuit may include a power-on-reset circuit having a second latch coupled to the first latch. The second latch may be configured to reset the first latch to a predetermined state at power-up.
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公开(公告)号:US20160343420A1
公开(公告)日:2016-11-24
申请号:US14849902
申请日:2015-09-10
Applicant: ARM Limited
Inventor: Andy Wangkun Chen , Gus Yeung , Yew Keong Chong
Abstract: Various implementations described herein are directed to an integrated circuit for implementing low power input gating. In one implementation, the integrated circuit may include a chip enable device configured to receive and use a clock input signal to toggle a control input of memory based on a chip enable signal. The integrated circuit may include a latch device configured to latch the control input of the memory. The integrated circuit may include a latch enable device coupled between the chip enable device and the latch device. The latch enable device may be configured to receive the clock input signal from the chip enable device and use the clock input signal to gate the latch device based on a latch enable signal so as to selectively cutoff toggling of the clock input signal to the control input of the memory.
Abstract translation: 本文所描述的各种实现涉及用于实现低功率输入门控的集成电路。 在一个实现中,集成电路可以包括芯片使能装置,其被配置为接收和使用时钟输入信号,以基于芯片使能信号切换存储器的控制输入。 集成电路可以包括被配置为锁存存储器的控制输入的锁存装置。 集成电路可以包括耦合在芯片使能装置和锁存装置之间的锁存使能装置。 锁存使能装置可以被配置为从芯片使能装置接收时钟输入信号,并且使用时钟输入信号基于锁存使能信号来对锁存器件进行门控,以便有选择地将时钟输入信号切换到控制输入 的记忆。
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