Voltage regulation circuitry
    4.
    发明授权

    公开(公告)号:US11081156B2

    公开(公告)日:2021-08-03

    申请号:US16504072

    申请日:2019-07-05

    Applicant: Arm Limited

    Abstract: Various implementations described herein are directed to device having a clock generator that provides write reference signals. The device may include a voltage divider that receives the write reference signals and provides an output reference signal based on write polarity of the write reference signals. The device may include a voltage regulator that receives the output reference signal and provides a regulated voltage to a load based on the output reference signal.

    Detecting process variation of memory cells

    公开(公告)号:US10217743B2

    公开(公告)日:2019-02-26

    申请号:US15434659

    申请日:2017-02-16

    Applicant: ARM Limited

    Abstract: Various implementations described herein are directed to an integrated circuit having a memory cell array disposed in a first area of the integrated circuit. The memory cell array may include memory cells with first transistors of multiple types. The integrated circuit may include a process sensor disposed in a second area of the integrated circuit that is different than the first area. The process sensor may include a process detector having second transistors of the multiple types that are separate from the first transistors. The second transistors of the process detector may be arranged for detecting process variation of the memory cells of the memory cell array.

    Generating a Reference Current for Sensing
    7.
    发明申请

    公开(公告)号:US20200075095A1

    公开(公告)日:2020-03-05

    申请号:US16466149

    申请日:2017-11-10

    Applicant: Arm Limited

    Inventor: Akshay Kumar

    Abstract: Broadly speaking, embodiments of the present techniques provide apparatus and methods for generating a reference current for a memory array sensing scheme, and for using the generated reference current to sense the state of memory cells within the memory array. The generated reference current is particularly suitable for distinguishing between a high resistance state and a low resistance state.

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