中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

150 records (took 0.024 seconds)

    Resistive switching schmitt triggers and comparators
    132.
    发明授权
    Resistive switching schmitt triggers and comparators 有权
    电阻式开关施密特触发器和比较器

    公开(公告)号：US09000819B1

    公开(公告)日：2015-04-07

    申请号：US14133117

    申请日：2013-12-18

    Applicant: Intermolecular Inc.

    Inventor： Federico Nardi ,  Yun Wang

    IPC: H03K3/00 ,  H03K3/0233

    CPC classification number: H03K3/02335 ,  H03K3/02337

    Abstract: A resistive switching element can be used in a nonvolatile digital Schmitt trigger circuit or a comparator circuit. The Schmitt trigger circuit can include a resistive switching circuit, and a reset circuit. The resistive switching circuit can provide a hysteresis behavior suitable for Schmitt trigger operation. The reset circuit can be operable to reset the resistive switching circuit to a high resistance state. The comparator circuit can include a resistive switching circuit, a reset circuit, and a threshold setting circuit. The resistive switching circuit can include a resistive switching element, and can be operable to provide a signal comparing an input voltage with the set or reset threshold voltage of the resistive switching element. The threshold setting circuit can be operable to modify the set or reset threshold of the resistive switching element, effectively changing the reference voltage for the comparator circuit.

    Abstract translation: 电阻式开关元件可用于非易失性数字施密特触发电路或比较器电路。 施密特触发电路可以包括电阻开关电路和复位电路。 电阻开关电路可以提供适用于施密特触发器操作的滞后特性。 复位电路可以用于将电阻式开关电路复位到高电阻状态。 比较器电路可以包括电阻开关电路，复位电路和阈值设置电路。 电阻式开关电路可以包括电阻开关元件，并且可操作以提供将输入电压与电阻式开关元件的置位或复位阈值电压进行比较的信号。 阈值设置电路可以用于修改电阻性开关元件的置位或复位阈值，从而有效地改变比较器电路的参考电压。

    ReRAM materials stack for low-operating-power and high-density applications
    133.
    发明授权
    ReRAM materials stack for low-operating-power and high-density applications 有权
    ReRAM材料堆叠用于低功耗和高密度应用

    公开(公告)号：US09000407B2

    公开(公告)日：2015-04-07

    申请号：US13903656

    申请日：2013-05-28

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Yun Wang ,  Tony P. Chiang ,  Dipankar Pramanik

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

    Abstract: A switching element for resistive-switching memory (ReRAM) provides a controllable, consistent filament break-point at an abrupt structural discontinuity between a layer of high-k high-ionicity variable-resistance (VR) material and a layer of low-k low-ionicity VR material. The high-ionicity layer may be crystalline and the low-ionicity layer may be amorphous. The consistent break-point and characteristics of the low-ionicity layer facilitate lower-power operation. The defects (e.g., oxygen or nitrogen vacancies) that constitute the filament originate either in the high-ionicity VR layer or in a source electrode. The electrode nearest to the low-ionicity layer may be intrinsically inert or may be rendered effectively inert. Some electrodes are rendered effectively inert by the creation of the low-ionicity layer over the electrode.

    Abstract translation: 用于电阻式开关存储器（ReRAM）的开关元件在高k高离子度可变电阻（VR）材料层和低k低电平层之间突然的结构不连续性时提供可控的一致的灯丝断裂点 活性VR材料。 高离子层可以是结晶的，低离子层可以是无定形的。 低离子层的一致性断点和特性有利于低功率运行。 构成长丝的缺陷（例如，氧或氮空位）起源于高离子性VR层或源电极。 最接近低离子层的电极本质上是惰性的，或者可以有效地使其成为惰性的。 通过在电极上产生低离子层，使一些电极变得有效地是惰性的。

    Doped Oxide Dielectrics for Resistive Random Access Memory Cells
    134.
    发明申请
    Doped Oxide Dielectrics for Resistive Random Access Memory Cells 有权
    用于电阻随机存取存储单元的掺杂氧化物介质

    公开(公告)号：US20150093876A1

    公开(公告)日：2015-04-02

    申请号：US14565712

    申请日：2014-12-10

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Brian Butcher ,  Randall J. Higuchi ,  Yun Wang

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

    Abstract: Provided are methods of fabricating memory cells such as resistive random access memory (ReRAM) cells. A method involves forming a first layer including two high-k dielectric materials such that one material has a higher dielectric constant than the other material. In some embodiments, hafnium oxide and titanium oxide form the first layer. The higher-k material may be present at a lower concentration. In some embodiments, a concentration ratio of these two high-k materials is between about 3 and 7. The first layer may be formed using atomic layer deposition. The first layer is then annealed in an oxygen-containing environment. The method may proceed with forming a second layer including a low-k dielectric material, such as silicon oxide, and forming an electrode. After forming the electrode, the memory cell is annealed in a nitrogen containing environment. The nitrogen anneal may be performed at a higher temperature than the oxygen anneal.

    Abstract translation: 提供制造诸如电阻随机存取存储器（ReRAM）单元的存储单元的方法。 一种方法包括形成包括两个高k介电材料的第一层，使得一种材料具有比其它材料更高的介电常数。 在一些实施方案中，氧化铪和氧化钛形成第一层。 较高k的材料可以以更低的浓度存在。 在一些实施方案中，这两种高k材料的浓度比在约3和7之间。第一层可以使用原子层沉积形成。 然后将第一层在含氧环境中退火。 该方法可以继续形成包括低k介电材料（例如氧化硅）的第二层，并形成电极。 在形成电极之后，在含氮环境中对存储单元进行退火。 氮退火可以在比氧退火更高的温度下进行。

    Transition metal oxide bilayers
    135.
    发明授权
    Transition metal oxide bilayers 有权
    过渡金属氧化物双层

    公开(公告)号：US08987697B2

    公开(公告)日：2015-03-24

    申请号：US14252285

    申请日：2014-04-14

    Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

    Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

    IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

    Abstract translation: 本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。 还公开了形成非易失性存储元件的方法。 非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。 氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。 优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。 在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

    Confined Defect Profiling within Resistive Random Memory Access Cells
    139.
    发明申请
    Confined Defect Profiling within Resistive Random Memory Access Cells 有权
    电阻式随机存储器存取单元中的限制缺陷分析

    公开(公告)号：US20140264231A1

    公开(公告)日：2014-09-18

    申请号：US13891472

    申请日：2013-05-10

    Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

    Inventor： Yun Wang ,  Vidyut Gopal ,  Chien-Lan Hsueh

    IPC: H01L45/00

    CPC classification number: H01L45/10 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.

    Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 可以对包括缺陷源层，缺陷阻挡层和设置在缺陷源层和缺陷阻挡层之间的缺陷受主层的堆叠进行退火。 在退火过程中，缺陷以可控方式从缺陷源层转移到缺陷受体层。 同时，缺陷不会转移到缺陷阻挡层中，从而在缺陷受体层内形成最低浓度区。 该区域负责电阻交换。 精确控制区域的尺寸和区域内的缺陷浓度允许ReRAM单元的电阻开关特性得到显着改善。 在一些实施例中，缺陷源层包括氮氧化铝，缺陷阻挡层包括氮化钛，缺陷受主层包括氧化铝。

    Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell
    140.
    发明申请
    Bipolar Resistive-Switching Memory with a Single Diode Per Memory Cell 审中-公开
    具有每个存储单元的单个二极管的双极电阻开关存储器

    公开(公告)号：US20140247649A1

    公开(公告)日：2014-09-04

    申请号：US14276229

    申请日：2014-05-13

    Applicant: Intermolecular, Inc.

    Inventor： Yun Wang ,  Tony P. Chiang ,  Prashant B. Phatak

    IPC: G11C13/00

    CPC classification number: G11C13/02 ,  G11C7/00 ,  G11C11/36 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/72

    Abstract: According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

    Abstract translation: 根据各种实施例，使用双极开关的电阻式开关存储器元件和存储元件阵列包括仅包括不是齐纳二极管的单个二极管的选择元件。 即使当在二极管的反向偏置方向上施加小于二极管的击穿电压的开关电压时，本文所述的电阻式开关存储元件也可以切换。 存储器元件能够在瞬态脉冲电压对存储元件可见时的非常短的时间内进行切换，因此每个存储器单元可以使用单个二极管。

Patent Agency Ranking