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公开(公告)号：US10851298B2
公开(公告)日：2020-12-01
申请号：US16554839
申请日：2019-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yuho Won , Ha Il Kwon , Eun Joo Jang , Jaejun Chang , Dae Young Chung
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other, and an emissive layer disposed between the first electrode and the second electrode and including the quantum dots. The quantum dots include a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dots do not include cadmium. The electroluminescent device has an external quantum efficiency of greater than or equal to about 9% and a maximum brightness of greater than or equal to about 10,000 candelas per square meter (cd/m2).
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132.发明授权公开(公告)号：US10808174B2
公开(公告)日：2020-10-20
申请号：US15855436
申请日：2017-12-27
Inventor： Young Seok Park , Shang Hyeun Park , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Dae Young Chung , Taekhoon Kim , Yuho Won
Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.
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公开(公告)号：US10739634B2
公开(公告)日：2020-08-11
申请号：US15670399
申请日：2017-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun A Kang , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun
IPC: G02F1/1335 , C09D123/08 , C09K11/02 , G02F1/13357 , C09K11/56 , C09K11/70 , C09K11/88 , C08K9/08
Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
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公开(公告)号：US10717927B2
公开(公告)日：2020-07-21
申请号：US15210171
申请日：2016-07-14
Inventor： Tae Gon Kim , Yehonadav Bekenstein , Eun Joo Jang , Paul Alivisatos
IPC: C09K11/74 , C09K11/72 , H01L33/50 , C09K11/02 , H01L31/0352 , B82Y20/00 , B82Y40/00 , B82Y30/00
Abstract: An indium-containing quantum dot including a compound represented by Chemical Formula 1: In1-xMxA Chemical Formula 1 wherein, in Chemical Formula 1, M is aluminum, gallium, yttrium, or scandium, A is nitrogen, phosphorous, arsenic, antimony, bismuth, or a combination thereof, and X is greater than or equal to 0 and less than 1, wherein the indium-containing quantum dot includes fluorine and oxygen to bonded to a surface of the indium-containing quantum dot, wherein an amount of the fluorine is greater than or equal to about 10 atomic percent based on a total number of indium atoms in the indium-containing quantum dot as determined by Rutherford backscattering analysis, and wherein an amount of the oxygen is about 5 atomic percent to about 50 atomic percent based on the total number of indium atoms included in the quantum dot as determined by Rutherford backscattering analysis.
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公开(公告)号：US10717649B2
公开(公告)日：2020-07-21
申请号：US16117394
申请日：2018-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook Jang , Shin Ae Jun , Eun Joo Jang
Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy [Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.
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Patent Agency Ranking
公开(公告)号：US10673004B2
公开(公告)日：2020-06-02
申请号：US16297833
申请日：2019-03-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hyung Kim , Eun Joo Jang , Dae Young Chung , Yong Wook Kim , Yuho Won , Oul Cho
Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.
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公开(公告)号：US10597580B2
公开(公告)日：2020-03-24
申请号：US15335700
申请日：2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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138.发明申请公开(公告)号：US20200044173A1
公开(公告)日：2020-02-06
申请号：US16530253
申请日：2019-08-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Ho Kim , Won Sik Yoon , Jeong Hee Lee , Eun Joo Jang , Oul Cho
Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.
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公开(公告)号：US10446782B1
公开(公告)日：2019-10-15
申请号：US16104967
申请日：2018-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Moon Gyu Han , Dae Young Chung , Hongkyu Seo , Kwanghee Kim , Kun Su Park , Sujin Park , Eun Joo Jang
Abstract: A quantum dot device includes a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots, a first charge auxiliary layer disposed between the first electrode and the quantum dot layer and contacting the quantum dot layer, and a second charge auxiliary layer disposed between the second electrode and the quantum dot layer and contacting the quantum dot layer, wherein the plurality of quantum dots includes a quantum dot including an organic ligand on a surface thereof, the organic ligand including a hydrophilic functional group at a terminal end.
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公开(公告)号：US10323179B2
公开(公告)日：2019-06-18
申请号：US15335700
申请日：2016-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Eun Joo Jang , Yongwook Kim , Garam Park
Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.
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