DOMAIN-SELECTIVE CONTROL COMPONENT
    131.
    发明申请

    公开(公告)号:US20230087576A1

    公开(公告)日:2023-03-23

    申请号:US17940956

    申请日:2022-09-08

    Applicant: Rambus Inc.

    Abstract: A control component implements pipelined data processing operations in either of two timing domains bridged by a domain-crossing circuit according to one or more configuration signals that indicate relative clock frequencies of the two domain and/or otherwise indicate which of the two timing domains will complete the data processing operations with lowest latency.

    INTERCONNECT BASED ADDRESS MAPPING FOR IMPROVED RELIABILITY

    公开(公告)号:US20230081231A1

    公开(公告)日:2023-03-16

    申请号:US17893790

    申请日:2022-08-23

    Applicant: Rambus Inc.

    Abstract: Row addresses received by a module are mapped before being received by the memory devices of the module such that row hammer affects different neighboring row addresses in each memory device. Thus, because the mapped respective, externally received, row addresses applied to each device ensure that each set of neighboring rows for a given row address received by the module is different for each memory device on the module, row hammering of a given externally addressed row spreads the row hammering errors across different externally addressed rows on each memory device. This has the effect of confining the row hammer errors for each row that is hammered to a single memory device per externally addressed neighboring row. By confining the row hammer errors to a single memory device, the row hammer errors are correctible using a SDDC scheme.

    DYNAMICALLY CHANGING DATA ACCESS BANDWIDTH BY SELECTIVELY ENABLING AND DISABLING DATA LINKS

    公开(公告)号:US20230075057A1

    公开(公告)日:2023-03-09

    申请号:US17945863

    申请日:2022-09-15

    Applicant: Rambus Inc.

    Abstract: Bandwidth for information transfers between devices is dynamically changed to accommodate transitions between power modes employed in a system. The bandwidth is changed by selectively enabling and disabling individual control links and data links that carry the information. During a highest bandwidth mode for the system, all of the data and control links are enabled to provide maximum information throughout. During one or more lower bandwidth modes for the system, at least one data link and/or at least one control link is disabled to reduce the power consumption of the devices. At least one data link and at least one control link remain enabled during each low bandwidth mode. For these links, the same signaling rate is used for both bandwidth modes to reduce latency that would otherwise be caused by changing signaling rates. Also, calibration information is generated for disabled links so that these links may be quickly brought back into service.

    Memory error detection
    135.
    发明授权

    公开(公告)号:US11579965B2

    公开(公告)日:2023-02-14

    申请号:US17481246

    申请日:2021-09-21

    Applicant: Rambus Inc.

    Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation.

    MEMORY REPAIR METHOD AND APPARATUS BASED ON ERROR CODE TRACKING

    公开(公告)号:US20230028438A1

    公开(公告)日:2023-01-26

    申请号:US17852272

    申请日:2022-06-28

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

    Protocol for refresh between a memory controller and a memory device

    公开(公告)号:US11551741B2

    公开(公告)日:2023-01-10

    申请号:US17115538

    申请日:2020-12-08

    Applicant: Rambus Inc.

    Abstract: The present embodiments provide a system that supports self-refreshing operations in a memory device. During operation, the system transitions the memory device from an auto-refresh state, wherein a memory controller controls refreshing operations for the memory device, to a self-refresh state, wherein the memory device controls the refreshing operations. While the memory device is in the self-refresh state, the system sends progress information for the refreshing operations from the memory device to the memory controller. Next, upon returning from the self-refresh state to the auto-refresh state, the system uses the progress information received from the memory device to control the sequencing of subsequent operations by the memory controller.

    Methods and Circuits for Decision-Feedback Equalization Using Compensated Decision Regions

    公开(公告)号:US20220407750A1

    公开(公告)日:2022-12-22

    申请号:US17857338

    申请日:2022-07-05

    Applicant: Rambus Inc.

    Inventor: Nanyan Wang

    Abstract: A decision-feedback equalizer (DFE) samples an input signal with respect to a gamut of p reference-voltage levels to place the symbol represented by the input signal within a voltage region. The DFE derives a set of tentative decisions for the voltage region, the set excluding at least one of the possible values for the symbol under consideration. A feedback stage then selects a final decision from among the tentative decisions.

    UNSUCCESSFUL WRITE RETRY BUFFER
    139.
    发明申请

    公开(公告)号:US20220391332A1

    公开(公告)日:2022-12-08

    申请号:US17852135

    申请日:2022-06-28

    Applicant: Rambus Inc.

    Abstract: A memory module includes at least two memory devices. Each of the memory devices perform verify operations after attempted writes to their respective memory cores. When a write is unsuccessful, each memory device stores information about the unsuccessful write in an internal write retry buffer. The write operations may have only been unsuccessful for one memory device and not any other memory devices on the memory module. When the memory module is instructed, both memory devices on the memory module can retry the unsuccessful memory write operations concurrently. Both devices can retry these write operations concurrently even though the unsuccessful memory write operations were to different addresses.

    High performance, high capacity memory modules and systems

    公开(公告)号:US11520508B2

    公开(公告)日:2022-12-06

    申请号:US16880244

    申请日:2020-05-21

    Applicant: Rambus Inc.

    Abstract: Described are memory modules that include address-buffer components and data-buffer components that together support wide- and narrow-data modes. The address-buffer component manages communication between a memory controller and two sets of memory components. In the wide-data mode, the address-buffer enables memory components in each set and instructs the data-buffer components to communicate full-width read and write data by combining data from or to from both sets for each memory access. In the narrow-data mode, the address-buffer enables memory components in just one of the two sets and instructs the data-buffer components to half-width read and write data with one set per memory access.

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