公开(公告)号：US20230095086A1

公开(公告)日：2023-03-30

申请号：US17953803

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Charles Dezelah ,  Qi Xie ,  Viljami Pore

IPC: H01L21/285

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220328318A1

公开(公告)日：2022-10-13

申请号：US17845325

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  H01L21/768

Abstract: There is provided a method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220285146A1

公开(公告)日：2022-09-08

申请号：US17680761

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Timothee Blanquart ,  Eric Shero

IPC: H01L21/02 ,  H01L27/108

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220282374A1

公开(公告)日：2022-09-08

申请号：US17680903

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Charles Dezelah

IPC: C23C16/455

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220189775A1

公开(公告)日：2022-06-16

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  C23C16/32

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20220186364A1

公开(公告)日：2022-06-16

申请号：US17688258

申请日：2022-03-07

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  H01L27/108 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US11295980B2

公开(公告)日：2022-04-05

申请号：US16105802

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20210375622A1

公开(公告)日：2021-12-02

申请号：US17326912

申请日：2021-05-21

Applicant: ASM IP Holding B.V.

Inventor： Lucas Petersen Barbosa Lima ,  Joe Margetis ,  John Tolle ,  Rami Khazaka ,  Qi Xie

IPC: H01L21/02 ,  C30B25/04 ,  C30B29/52 ,  C30B25/18

Abstract: Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

公开(公告)号：US20210348267A1

公开(公告)日：2021-11-11

申请号：US17316847

申请日：2021-05-11

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Eric James Shero

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/455

Abstract: A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.