公开(公告)号：US06762650B2

公开(公告)日：2004-07-13

申请号：US10261785

申请日：2002-10-02

申请人： Masanori Fujidai ,  Hiroshi Nishida ,  Takahiro Baba ,  Koichi Sakamoto

发明人： Masanori Fujidai ,  Hiroshi Nishida ,  Takahiro Baba ,  Koichi Sakamoto

IPC分类号： H03B506

CPC分类号： H03B5/1852 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A high-frequency oscillation circuit includes a resonance circuit and an active circuit. The active circuit includes a field-effect transistor and a capacitor. An impedance-conversion circuit including a high-impedance line, a capacitive stub, and a connecting line such as wire, is connected between the active circuit and the resonance circuit. Accordingly, the impedance-conversion circuit can convert the characteristic impedance of the resonance circuit so that the absolute value of the reflection coefficient of the active circuit increases. As a result, the oscillation conditions can be easily fulfilled.

摘要翻译： 高频振荡电路包括谐振电路和有源电路。 有源电路包括场效应晶体管和电容器。 在有源电路和谐振电路之间连接包括高阻抗线，电容短截线和诸如导线的连接线的阻抗转换电路。 因此，阻抗转换电路可以将谐振电路的特性阻抗转换成有源电路的反射系数的绝对值增加。 结果，可以容易地实现振荡条件。

公开(公告)号：US06737687B2

公开(公告)日：2004-05-18

申请号：US10359204

申请日：2003-02-06

申请人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki

发明人： Takahiro Baba ,  Koichi Sakamoto ,  Shigeyuki Mikami ,  Hiroyasu Matsuzaki

IPC分类号： H01L2980

CPC分类号： H01L29/42316 ,  H01L29/41725

摘要： A field-effect transistor device includes an active area on a semiconductor substrate and a gate electrode, a source electrode, and a drain electrode are disposed on the surface of the active area, so as to define an FET portion. An electrode defining a line for connection to the gate, an electrode defining a line for connection to the source, and an electrode defining a line for connection to the drain are disposed on the semiconductor substrate. The electrodes define a slot line on the input side for supplying a signal to the FET portion, and a slot line on the output side from which a signal of the FET portion is output. The gate electrode has a shape which extends along the direction that approximately perpendicular to the conduction direction of the signal through the slot line on the input side.

摘要翻译： 场效应晶体管器件包括半导体衬底上的有源区和栅电极，源电极和漏极，设置在有源区的表面上，以限定FET部分。 限定用于连接到栅极的线的电极，限定用于连接到源的线的电极以及限定用于连接到漏极的线的电极设置在半导体衬底上。 电极在输入侧限定了用于向FET部分提供信号的槽线，以及在输出侧输出FET部分的信号的槽线。 栅电极具有沿输入侧的槽线大致垂直于信号的导通方向的方向延伸的形状。

公开(公告)号：US06730885B2

公开(公告)日：2004-05-04

申请号：US09897908

申请日：2001-07-05

申请人： Fujio Suzuki ,  Wenling Wang ,  Koichi Sakamoto ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey

发明人： Fujio Suzuki ,  Wenling Wang ,  Koichi Sakamoto ,  Moyuru Yasuhara ,  Sunil Shah ,  Pradeep Pandey

IPC分类号： H05B302

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read. If a deposition process is started, the output of a temperature sensor S and the model are used for estimating the temperature of the wafers W in the reaction tube 2, and the powers to be supplied to the heaters 31 through 35 are separately controlled so that the estimated temperature approaches the target temperature trajectory.

摘要翻译： 提供能够适当应对多产品小批量生产的批式热处理系统，控制方法和热处理方法。反应管2包括多个加热器31至35和多个温度传感器，以及 在其中容纳晶片舟23.控制部分100存储许多用于根据安装在晶片舟23上的晶片W的数量和布置位置来估计（计算）反应管2中的晶片W的温度的数学模型 ，以及许多目标温度轨迹。 如果晶片舟23装载在反应管2中，则读取与安装的晶片W的数量和排列位置对应的数学模型和目标温度轨迹。 如果开始沉积工艺，则使用温度传感器S和模型的输出来估计反应管2中的晶片W的温度，并且分别控制供给到加热器31至35的功率，使得 估计的温度接近目标温度轨迹。

公开(公告)号：US06628230B2

公开(公告)日：2003-09-30

申请号：US10246701

申请日：2002-09-19

申请人： Shigeyuki Mikami ,  Tetsuya Kouchi ,  Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto ,  Toshiro Hiratsuka ,  Takatoshi Kato ,  Yohei Ishikawa

发明人： Shigeyuki Mikami ,  Tetsuya Kouchi ,  Hiroyasu Matsuzaki ,  Kazutaka Mukaiyama ,  Koichi Sakamoto ,  Toshiro Hiratsuka ,  Takatoshi Kato ,  Yohei Ishikawa

IPC分类号： G01S728

CPC分类号： H01P1/20363 ,  H01P5/02 ,  H05K1/0239 ,  H05K1/142

摘要： A radio frequency module includes a multi-chip substrate divided into separate substrates. An antenna block, a duplexer block, a transmitter block, a receiver block, and an oscillator block are formed on the separate substrates. Connection resonators, which are connected to transmission lines, are formed at edges of the separate substrates. The connection resonators on adjacent ones of the separate substrates are arranged close to each other such that the two adjacent resonators are electromagnetically coupled to each other. Thus, the transmission lines on the separate substrates are interconnected, and a signal can be propagated among the blocks.

摘要翻译： 射频模块包括分为独立基板的多芯片基板。 在分离的基板上形成天线块，双工器块，发送器块，接收器块和振荡器块。 连接到传输线的连接谐振器形成在分离的基板的边缘处。 相邻的分离的基板上的连接谐振器彼此靠近地布置，使得两个相邻的谐振器彼此电磁耦合。 因此，分离的基板上的传输线互连，并且可以在块之间传播信号。

公开(公告)号：US06622104B2

公开(公告)日：2003-09-16

申请号：US09909861

申请日：2001-07-23

申请人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Takashi Yokota

发明人： Wenling Wang ,  Koichi Sakamoto ,  Fujio Suzuki ,  Takashi Yokota

IPC分类号： G06F1900

CPC分类号： G01K15/005

摘要： A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

公开(公告)号：US06323740B1

公开(公告)日：2001-11-27

申请号：US09356394

申请日：1999-07-16

申请人： Yohei Ishikawa ,  Kenichi Iio ,  Takatoshi Kato ,  Koichi Sakamoto

发明人： Yohei Ishikawa ,  Kenichi Iio ,  Takatoshi Kato ,  Koichi Sakamoto

IPC分类号： H01P116

CPC分类号： H01P5/187 ,  H01P1/16 ,  H01P3/003 ,  H01P3/006 ,  H01P3/023 ,  H01P3/165 ,  H01P5/107 ,  H01P5/184 ,  H01P7/10

摘要： Electrodes are formed on both top and bottom surfaces of a dielectric plate and grounded coplanar lines, as transmission lines, are formed on the top surface of the dielectric plate. A plurality of micro-strip lines, each composed of high-impedance lines and low-impedance lines alternately connected in series, is arranged at a pitch shorter than the wavelength of a wave traveling along the grounded coplanar lines. A spurious mode propagation blocking circuit thus constructed prevents a spurious mode wave, such as a parallel-plate mode, from traveling.

摘要翻译： 在电介质板的顶表面和底表面上形成电极，并且在电介质板的顶表面上形成接地共面线作为传输线。 以串联方式交替连接的高阻抗线路和低阻抗线路构成的多条微带线布置成比沿接地共面线行进的波长短的间距。 如此构造的寄生模式传播阻塞电路防止诸如平行板模式的杂散模式波行进。

公开(公告)号：US06285269B1

公开(公告)日：2001-09-04

申请号：US08891143

申请日：1997-07-10

申请人： Yohei Ishikawa ,  Koichi Sakamoto ,  Sadao Yamashita ,  Takehisa Kajikawa

发明人： Yohei Ishikawa ,  Koichi Sakamoto ,  Sadao Yamashita ,  Takehisa Kajikawa

IPC分类号： H01P318

CPC分类号： H01L29/4175 ,  H01L23/66 ,  H01L29/41725 ,  H01L29/41775 ,  H01L29/42316 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/19032 ,  H01L2924/3011 ,  H01L2924/00

摘要： A drain electrode and a source electrode are provided for an intrinsic device section on a GaAs substrate with a gate electrode placed therebetween. Almost all or substantial parts of the GaAs substrate is covered by an extending source electrode extending from the source electrode. A belt-shaped extending drain electrode is provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an output-side microstripline is formed. A belt-shaped extending gate electrode is also provided on the extending source electrode with a dielectric layer placed therebetween, and thereby an input-side microstripline is formed.

摘要翻译： 为GaAs衬底上的本征器件部分提供漏电极和源电极，栅电极位于其间。 GaAs衬底的几乎全部或大部分被从源电极延伸的延伸源电极覆盖。 在延伸源电极上设置带状延伸的漏电极，其间放置介电层，从而形成输出侧微带线。 在延伸源电极上还设置有带状延伸栅电极，其间放置介电层，从而形成输入侧微带线。

公开(公告)号：US06188360B1

公开(公告)日：2001-02-13

申请号：US09389856

申请日：1999-09-02

申请人： Takatoshi Kato ,  Koichi Sakamoto ,  Kenichi Iio ,  Yohei Ishikawa

发明人： Takatoshi Kato ,  Koichi Sakamoto ,  Kenichi Iio ,  Yohei Ishikawa

IPC分类号： H01Q302

CPC分类号： H01P7/10

摘要： A radio-frequency radiation source comprises electrodes containing opposing electrodeless parts formed on both sides of a dielectric plate in which the electrodeless parts are made to function as a dielectric resonator, a slit formed in the electrodeless part, and a switching element mounted over the slit. Further, a transmission line coupled to the dielectric resonator is provided. As constructed this way, the resonance frequency of the resonator is switched by turn-on and turn-off of the switching element. When the resonator resonates with the frequency of a signal propagated through the transmission line, the energy of the electromagnetic field is radiated to the outside through a slot.

摘要翻译： 射频辐射源包括形成在电介质板的两侧上的相对无电极部分的电极，其中无电极部分用作介电谐振器，形成在无电极部分中的狭缝以及安装在狭缝上的开关元件 。 此外，提供耦合到介质谐振器的传输线。 如这样构成的，谐振器的谐振频率通过开关元件的导通和截止来切换。 当谐振器与通过传输线传播的信号的频率谐振时，电磁场的能量通过一个槽辐射到外部。

公开(公告)号：US06169301A

公开(公告)日：2001-01-02

申请号：US09030971

申请日：1998-02-26

申请人： Yohei Ishikawa ,  Koichi Sakamoto ,  Sadao Yamashita ,  Takehisa Kajikawa

发明人： Yohei Ishikawa ,  Koichi Sakamoto ,  Sadao Yamashita ,  Takehisa Kajikawa

IPC分类号： H01L2980

CPC分类号： H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A planar dielectric integrated circuit is provided such that energy conversion loss between a planar dielectric line and electronic components is small and that impedance matching between them can be easily obtained. By providing slots which oppose both main surfaces of a circuit substrate, two planar dielectric lines are constructed. A slot line, and a first line-conversion conductor pattern which is connected to the electromagnetic field of the slot line and a first planar dielectric line in order to perform line conversion, are provided at the end portion of the first planar dielectric line, including a slot. A coplanar line and a second line-conversion conductor which is made to project in a direction at right angles to a second planar dielectric line is provided at the end portion of the second planar dielectric line, including a slot. A semiconductor device is placed in such a manner as to be extended over the coplanar line and the slot line.

摘要翻译： 提供了平面介质集成电路，使得平面介质线和电子部件之间的能量转换损耗小，并且可以容易地获得它们之间的阻抗匹配。 通过提供与电路基板的两个主表面相对的槽，构成两个平面介质线。 在第一平面介质线的端部设置有槽线和连接到槽线的电磁场和第一平面介质线以进行线路转换的第一线路转换导体图案，包括 一个插槽。 在包括槽的第二平面介质线的端部设置有共面线和第二线转换导体，其在与第二平面介质线成直角的方向上突出。 半导体器件被放置成在共面线和缝线上延伸。

公开(公告)号：US6166614A

公开(公告)日：2000-12-26

申请号：US92290

申请日：1998-06-05

申请人： Yohei Ishikawa ,  Koichi Sakamoto ,  Atsushi Saitoh ,  Kenichi Iio

发明人： Yohei Ishikawa ,  Koichi Sakamoto ,  Atsushi Saitoh ,  Kenichi Iio

IPC分类号： H01P3/02 ,  H01P3/16 ,  H01P3/00

CPC分类号： H01P3/165 ,  H01P3/023

摘要： A nonradiative planar dielectric line exhibits low transmission losses and is easily connectable to electronic components. A first slot is provided between two electrodes on a first main surface of a dielectric plate. A second slot is provided between two electrodes on a second main surface of the dielectric plate. A first conductor is electrically connected to the electrodes on the first main surface and also covers the first slot. A second conductor is electrically connected to the electrodes on the second main surface and also covers the second slot. An integrated circuit using the above type of dielectric line is also provided. Thus, apparatuses using the above dielectric lines or integrated circuits are miniaturized.

摘要翻译： 非辐射平面介质线显示出低的传输损耗并且易于连接到电子部件。 在电介质板的第一主表面上的两个电极之间设置第一槽。 在电介质板的第二主表面上的两个电极之间设置第二槽。 第一导体电连接到第一主表面上的电极并且还覆盖第一槽。 第二导体电连接到第二主表面上的电极并且还覆盖第二槽。 还提供了使用上述类型的介质线的集成电路。 因此，使用上述介质线或集成电路的装置被小型化。