公开(公告)号：US11450356B2

公开(公告)日：2022-09-20

申请号：US16828591

申请日：2020-03-24

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Carl W. Werner

IPC: G11C7/04 ,  G06F1/12 ,  G11C7/22 ,  G11C29/02 ,  G11C29/50 ,  H03K5/15 ,  H01L39/22

Abstract: In a chip-to-chip signaling system includes at least one signaling link coupled between first and second ICs, the first IC has an interface coupled to the signaling link and timed by a first interface timing signal. The second IC has an interface coupled to the signaling link and timed by a second interface timing signal that is mesochronous with respect to the first interface timing signal. The second IC further has phase adjustment circuitry that adjusts a phase of the second interface timing signal using a digital counter implemented with Josephson-junction circuit elements.

公开(公告)号：US11347608B2

公开(公告)日：2022-05-31

申请号：US16670798

申请日：2019-10-31

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Brent S. Haukness ,  John Eric Linstadt ,  Scott C. Best

IPC: G06F11/00 ,  G06F11/20 ,  G11C11/4093 ,  G11C29/52

Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

公开(公告)号：US11347587B2

公开(公告)日：2022-05-31

申请号：US16881859

申请日：2020-05-22

Applicant: Rambus Inc.

Inventor： Michael Miller ,  Stephen Magee ,  John Eric Linstadt

IPC: G06F11/10 ,  G06F3/06

Abstract: Data and error correction information may involve accessing multiple data channels (e.g., 8) and one error detection and correction channel concurrently. This technique requires a total of N+1 row requests for each access, where N is the number of data channels (e.g., 8 data row accesses and 1 error detection and correction row access equals 9 row accesses.) A single (or at least less than N) data channel row may be accessed concurrently with a single error detection and correction row. This reduces the number of row requests to two (2)—one for the data and one for the error detection and correction information. Because, row requests consume power, reducing the number of row requests is more power efficient.

公开(公告)号：US11309015B2

公开(公告)日：2022-04-19

申请号：US16999869

申请日：2020-08-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Zhichao Lu ,  Kenneth Lee Wright

IPC: G11C11/34 ,  G11C11/4091 ,  G06F11/10 ,  G11C11/4076

Abstract: Memory devices, controllers and associated methods are disclosed. In one embodiment, a memory device is disclosed. The memory device includes storage cells that are each formed with a metal-oxide-semiconductor (MOS) transistor having a floating body. Data is stored as charge in the floating body. A transfer interface receives a read command to access data stored in a first group of the storage cells. Sensing circuitry detects the data stored in the first group of storage cells. The transfer interface selectively performs a writeback operation of the sensed data associated with the read command.

公开(公告)号：US11257539B2

公开(公告)日：2022-02-22

申请号：US16919653

申请日：2020-07-02

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Thomas Vogelsang

IPC: G11C11/00 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/4076 ,  G11C11/4097

Abstract: A memory stack comprises at least two memory components. The memory components have a first data link interface and are to transmit signals on a data link coupled to the first data link interface at a first voltage level. A buffer component has a second data link interface coupled to the data link. The buffer component is to receive signals on the second data link interface at the first voltage level. A level shifting latch produces a second voltage level in response to receiving the signals at the second data link interface, where the second voltage level is higher than the first voltage level.

公开(公告)号：US20220005519A1

公开(公告)日：2022-01-06

申请号：US17376032

申请日：2021-07-14

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Brent Steven Haukness ,  Kenneth L. Wright ,  Thomas Vogelsang

IPC: G11C11/403 ,  G11C11/4097 ,  G11C11/4096 ,  G11C8/08 ,  G11C7/10 ,  G11C7/18 ,  G11C5/02 ,  G11C11/408 ,  G06F12/06 ,  G11C11/406 ,  G11C11/409

Abstract: A memory component includes a first memory bank. The first memory bank has a plurality of sub-arrays having sub-rows of memory elements. The memory component includes a write driver, coupled to the first memory bank, to perform a write operation of an entire sub-row of a sub-array. To perform the write operation, the write driver is to load a burst of write data to the memory bank. The memory bank may then activate a plurality of sense amplifiers associated with a plurality of memory elements of the entire sub-row to load the burst of write data to the plurality of sense amplifiers.

公开(公告)号：US11210242B2

公开(公告)日：2021-12-28

申请号：US16888551

申请日：2020-05-29

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Kenneth L. Wright ,  John Eric Linstadt ,  Craig Hampel

IPC: G06F13/16 ,  G06F12/0868 ,  G06F12/0888 ,  G11C7/10 ,  G06F3/06 ,  G06F11/10 ,  G06F12/0895 ,  G06F13/28 ,  G11C29/52

Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, a memory module includes a pin interface for coupling to a bus. The bus has a first width. The module includes at least one storage class memory (SCM) component and at least one DRAM component. The memory module operates in a first mode that utilizes all of the first width, and in a second mode that utilizes less than all of the first width.

公开(公告)号：US11114150B2

公开(公告)日：2021-09-07

申请号：US16838646

申请日：2020-04-02

Applicant: Rambus Inc.

Inventor： Thomas Vogelsang ,  John Eric Linstadt ,  Liji Gopalakrishnan

IPC: G11C11/408 ,  G11C11/4094 ,  G11C11/4091 ,  G06F13/42

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

公开(公告)号：US11109512B2

公开(公告)日：2021-08-31

申请号：US16634531

申请日：2018-07-23

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  John Eric Linstadt ,  Thomas Vogelsang

IPC: G06F1/20 ,  H05K7/20 ,  H01L27/108 ,  H01L23/367

Abstract: The embodiments herein describe technologies of cryogenic digital systems with a first component located in a first non-cryogenic temperature domain, a second component located in a second temperature domain that is lower in temperature than the first cryogenic temperature domain, and a third component located in a cryogenic temperature domain that is lower in temperature than the second cryogenic temperature domain.

公开(公告)号：US11069423B2

公开(公告)日：2021-07-20

申请号：US16537021

申请日：2019-08-09

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  John Eric Linstadt ,  Paul William Roukema

IPC: G11C29/00 ,  G11C29/44 ,  G11C5/04 ,  G11C11/401 ,  G11C29/02 ,  G11C29/52

Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.