公开(公告)号：US20250151404A1

公开(公告)日：2025-05-08

申请号：US19011968

申请日：2025-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H10D86/60 ,  H10D30/67 ,  H10D62/80 ,  H10D64/27 ,  H10D64/62 ,  H10D86/40 ,  H10K59/121 ,  H10K59/123

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20240186151A1

公开(公告)日：2024-06-06

申请号：US18434977

申请日：2024-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC: H01L21/477 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20240105733A1

公开(公告)日：2024-03-28

申请号：US18519471

申请日：2023-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/458 ,  H01L29/4908

Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

公开(公告)号：US20240072176A1

公开(公告)日：2024-02-29

申请号：US18504297

申请日：2023-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L21/02554

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20240014222A1

公开(公告)日：2024-01-11

申请号：US18215987

申请日：2023-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H01L27/127 ,  G09G3/36

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US20230019824A1

公开(公告)日：2023-01-19

申请号：US17944551

申请日：2022-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC: H01L21/465 ,  H01L29/04 ,  H01L29/786 ,  H01L21/28 ,  H01L21/324 ,  H01L29/66 ,  H01L21/02 ,  H01L21/477

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20220068977A1

公开(公告)日：2022-03-03

申请号：US17512855

申请日：2021-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC: H01L27/12 ,  H01L29/45 ,  G02F1/1368 ,  H01L29/786

Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

公开(公告)号：US20220037153A1

公开(公告)日：2022-02-03

申请号：US17500149

申请日：2021-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Miyuki HOSOBA ,  Kosei NODA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Junichiro SAKATA

IPC: H01L21/02 ,  H01L29/66

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

公开(公告)号：US20210336060A1

公开(公告)日：2021-10-28

申请号：US17367689

申请日：2021-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are foamed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US20210098610A1

公开(公告)日：2021-04-01

申请号：US17026486

申请日：2020-09-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/423

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.