公开(公告)号：US3981755A

公开(公告)日：1976-09-21

申请号：US534205

申请日：1974-12-19

Applicant: Jonathan Paul Gowers

Inventor： Jonathan Paul Gowers

IPC: H01J9/12 ,  H01L7/36 ,  H01L7/38

CPC classification number: H01J9/12 ,  H01J2201/3423 ,  Y10S148/065 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S148/135

Abstract: A photocathode structure containing a photocathode material, comprising a plate of single crystal gallium indium phosphide having major surfaces and relative proportions of gallium and indium such that the lattice parameter thereof is substantially the same as that of said photocathode material, and, an epitaxial layer of photocathode material located on a first said major surface of said crystal, the thickness of said layer of photocathode material being of the order of the diffusion length of electrons therein and at least part of a second said major surface of the gallium indium phosphide plate being substantially free from contact by solid material.

Abstract translation: 一种含有光电阴极材料的光电阴极结构，其包含具有主要表面和镓和铟的相对比例的单晶镓铟磷化物的平板，使得其晶格参数与所述光电阴极材料的晶格参数基本相同;以及外延层 位于所述晶体的第一所述主表面上的光电阴极材料，所述光电阴极材料层的厚度为其内的电子的扩散长度的量级，并且所述磷酸铟镓板的至少一部分所述主表面基本上是 无固体材料接触。

公开(公告)号：US3978360A

公开(公告)日：1976-08-31

申请号：US536785

申请日：1974-12-27

Applicant: James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Lawrence William James

Inventor： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Lawrence William James

IPC: H01J1/34 ,  H01J39/06 ,  H01L31/10

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: An increase in the quantum efficiency of a III-V photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-V isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, .alpha., without compensation of the acceptor dopant. A layer of a suitable I-V, I-VI or I-VII compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

公开(公告)号：US3959037A

公开(公告)日：1976-05-25

申请号：US573290

申请日：1975-04-30

Applicant: William A. Gutierrez ,  Herbert L. Wilson

Inventor： William A. Gutierrez ,  Herbert L. Wilson

IPC: H01J1/34 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting layer and as an intermediate construction layer, and the GaAlAs layers serve as a passivating window and as an etch stop layer.

Abstract translation: 使用其中GaAs层用作发光层和作为中间构造层的GaAs和砷化镓砷化镓（GaAlAs）的多层的透射模式负电子亲和势砷化镓（GaAs）光电阴极和具有制造技术的倍增极， GaAlAs层用作钝化窗口和作为蚀刻停止层。

公开(公告)号：US3951698A

公开(公告)日：1976-04-20

申请号：US527181

申请日：1974-11-25

Applicant: Herbert L. Wilson ,  William A. Gutierrez

Inventor： Herbert L. Wilson ,  William A. Gutierrez

IPC: H01J1/34 ,  H01J31/50 ,  H01L21/36

CPC classification number: H01J31/50 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/119 ,  Y10S148/12

Abstract: A photon sensing device utilizing a III-V negative electron affinity photthode grown on a window substrate support which simultaneously serves as a support and growth surface for the epitaxial growth of suitable cathode layers as well as the input window for the device.

Abstract translation: 利用生长在窗户基板支架上的III-V负电子亲和光电阴极的光子感测装置，其同时用作适当阴极层的外延生长的支撑和生长表面以及装置的输入窗口。

公开(公告)号：US3913218A

公开(公告)日：1975-10-21

申请号：US47624874

申请日：1974-06-04

Applicant: US ARMY

Inventor： MILLER BRIAN S

IPC: H01J9/12 ,  B01J17/00

CPC classification number: H01J9/12 ,  H01J2201/3423

Abstract: A method of producing a tunnel emitter photocathode consisting of heating a semiconductor layer and then depositing a layer of aluminum oxide on one side thereof at a rapid rate and then baking out the wafer in a hydrogen gas atmosphere. After depositing electrical contacts on each side of the wafer, a metallic emitter layer is evaporated over the aluminum oxide layer with the metallic emitter layer treated with a low work function material such as cesium and oxygen to further increase the emission efficiency.

Abstract translation: 一种制造隧道发射光电阴极的方法，该方法包括加热半导体层，然后以一定速度沉积一侧的氧化铝层，然后在氢气气氛中烘烤晶片。 在晶片的每一侧沉积电触点之后，金属发射极层在氧化铝层上蒸发，金属发射极层用低功函数材料如铯和氧处理，以进一步提高发射效率。

公开(公告)号：US3631303A

公开(公告)日：1971-12-28

申请号：US3631303D

申请日：1970-01-19

Applicant: VARIAN ASSOCIATES

Inventor： ANTYPAS GEORGE A ,  BELL RONALD L

IPC: H01J1/34 ,  H01L15/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/042 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S438/936

Abstract: A gradient of potential energy was established in the active layer of a III-V photocathode for enhancing free electron diffusion toward the emissive surface of the cathode. The energy gradient was provided by decreasing the bandgap energy across the active layer which caused the conduction level to slope downwards from the substrate to the emissive surface through progressive changes in the concentration of the III-V elements forming the active layer. Alternatively, a nonuniform concentration of active layer dopant-heavy on the substrate side and light on the emissive side of the active layer-established a built-in electric field across the active layer. The graded bandgap and/or dopant levels promote free electron drift toward the outer surface of the active layer. Layers of cesium, cesium oxide, or both, were provided over the active layer to lower the work function of the photocathode emissive surface.

公开(公告)号：US3408521A

公开(公告)日：1968-10-29

申请号：US50911265

申请日：1965-11-22

Applicant: STANFORD RESEARCH INST

Inventor： DORE BURNELL V ,  GEPPERT DONOVAN V

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/064 ,  Y10S148/072 ,  Y10S148/119 ,  Y10S148/12 ,  Y10S148/15

公开(公告)号：US3275869A

公开(公告)日：1966-09-27

申请号：US29455563

申请日：1963-07-12

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01J1/34 ,  H01J23/04

CPC classification number: H01J1/34 ,  H01J23/04 ,  H01J2201/3423 ,  H01J2201/3426