公开(公告)号：US5277715A

公开(公告)日：1994-01-11

申请号：US893496

申请日：1992-06-04

申请人： David A. Cathey

发明人： David A. Cathey

IPC分类号： C23F1/24 ,  C03C15/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  B08B7/00 ,  C03C23/00

CPC分类号： H01L21/02052 ,  C03C15/00 ,  H01L21/67057 ,  H01L21/67086

摘要： Methods for reducing the number of adherent particulates in processing solutions to avoid deposition of such particulates onto a substrate treated with those processing solutions. For example, hydrogen fluoride-containing acids used to etch silicon dioxide layers during silicon wafer processing produce fluorosilicate particulates that tend to adhere to and contaminate the silicon substrate. Directing the processing solution carrying the fluorosilicate particulates to a filter employing silicon beads to remove the contaminant fluorosilicate particulates before they can recirculate and adhere to the silicon substrate.

摘要翻译： 减少加工溶液中粘附颗粒数量以避免这些颗粒沉积到用这些处理溶液处理的基材上的方法。 例如，在硅晶片处理期间用于蚀刻二氧化硅层的含氟化氢的酸产生倾向于粘附并污染硅衬底的氟硅酸盐微粒。 将携带氟硅酸盐颗粒的处理溶液引导至使用硅珠的过滤器，以在它们可再循环并粘附到硅衬底之前去除污染物氟硅酸盐颗粒。

公开(公告)号：US5223083A

公开(公告)日：1993-06-29

申请号：US824792

申请日：1992-01-23

申请人： David A. Cathey ,  J. Brett Rolfson

发明人： David A. Cathey ,  J. Brett Rolfson

IPC分类号： H01L21/30 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/948

摘要： The subject process relates to the etching of a semiconductor device having a re-entrant profile area which causes residual positive photoresist material to remain therewithin after formation of an etch mask of the positive photoresist material. A negative photoresist etch mask is formed on a major surface of the outer conductive film structural layer. The etch mask comprises a plurality of photoresist lines arranged in a predetermined pattern which defines a plurality of spaces therebetween, which in turn expose a plurality of areas of the major surface of the semiconductor device. Substantially all of the negative photosensitive material located within the re-entrant profile area is removed during the etch mask formation process. The exposed areas of the major surface of the outer structural layer can then be etched to form the requisite etch pattern with a chemical etchant system without regard to interference by unwanted residual photoresist material.

摘要翻译： 本发明涉及一种半导体器件的蚀刻，该半导体器件具有在形成正型光致抗蚀剂材料的蚀刻掩模之后残留的正性光致抗蚀剂材料保留在其中的重新设计的轮廓区域。 在外导电膜结构层的主表面上形成负光致抗蚀剂蚀刻掩模。 蚀刻掩模包括以预定图案布置的多个光致抗蚀剂线，其限定了它们之间的多个间隔，其又暴露半导体器件的主表面的多个区域。 在蚀刻掩模形成工艺期间，基本上所有位于重入轮廓区域内的负感光材料都被去除。 然后可以用化学蚀刻剂系统蚀刻外部结构层的主表面的暴露区域以形成必要的蚀刻图案，而不考虑不想要的残留光致抗蚀剂材料的干扰。

公开(公告)号：US5069747A

公开(公告)日：1991-12-03

申请号：US633573

申请日：1990-12-21

申请人： David A. Cathey ,  Mark E. Tuttle ,  Ruojia Lee ,  Tyler A. Lowrey

发明人： David A. Cathey ,  Mark E. Tuttle ,  Ruojia Lee ,  Tyler A. Lowrey

IPC分类号： H01L21/033 ,  H01L21/266 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/31612 ,  H01L29/6656

摘要： A process for creating and removing temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on existing permanent silicon dioxide structures that are exposed. The process comprises the steps of blanket depositing an ozone-TEOS silicon dioxide layer through chemical vapor deposition on top of the in-process integrated circuit, thus covering permanent structures formed from conventional silicon dioxides (e.g. TEOS and thermal oxides), etching the ozone-TEOS layer to create said temporary structures, and removing the temporary structures using dilute hydrofluoric acid.

摘要翻译： 一种用于在过程中集成电路中创建和去除临时二氧化硅结构的方法，对暴露的现有永久性二氧化硅结构的影响最小。 该方法包括以下步骤：通过化学气相沉积在过程中集成电路的顶部覆盖沉积臭氧-TEOS二氧化硅层，从而覆盖由常规二氧化硅（例如TEOS和热氧化物）形成的永久结构， TEOS层以产生所述临时结构，并使用稀氢氟酸除去临时结构。