Guiding apparatus for a slidable member driven by a linear motor

    公开(公告)号:US20030036336A1

    公开(公告)日:2003-02-20

    申请号:US09760850

    申请日:2001-01-17

    Inventor: Yoshio Wakazono

    CPC classification number: B23Q1/38 B23Q1/267 B23Q1/58 B23Q5/28

    Abstract: A grinding head guiding apparatus is disclosed. The grinding head is driven by the linear motor which is constituted of a coil attached on an underside surface of the grinding head and a magnet attached on an upside surface. Horizontal guiding members are fixed on the base, and the grinding head is guided to the horizontal guide members. Then, a height of a portion opposing the coil and the magnet is approximately same as a height of the horizontal guide members guiding the grinding head. Besides, temporary supporting members are attached on the base so as to avoid sticking the coil to the magnet, when the coil is detached from the grinding head. Further, the grinding head has ribs therein, which define an approximately trapezoid-shaped space disposed a center of the grinding head and triangle-shaped spaces disposed both side of the trapezoid-shaped space.

    Spectroscopic measurment of the chemical constituents of a CMP slurry
    152.
    发明申请
    Spectroscopic measurment of the chemical constituents of a CMP slurry 有权
    CMP浆料的化学成分的光谱测量

    公开(公告)号:US20030032366A1

    公开(公告)日:2003-02-13

    申请号:US09928948

    申请日:2001-08-13

    Inventor: Todd A. Cerni

    CPC classification number: G01N21/314

    Abstract: An apparatus and method for determining the chemical content of a chemical mechanical planarization (CMP) slurry. A CMP sample cell has windows for passing electromagnetic radiation. Three wavelengths of electromagnetic radiation, one of which is strongly absorbed by said CMP slurry and the other two of which are weakly absorbed by said CMP slurry, are directed through said sample cell to a detector, which processes a signal. A processor utilizes the signal to determine the transmission at each wavelength, then utilizes Beer's law to determine a transmission function for each wavelength, and calculates the wavelength dependent particle transmission for each wavelength using an optical model, to form a system of three equations in three unknowns, which are solved to determine a parameter representative of the chemical content of the CMP slurry.

    Abstract translation: 一种用于确定化学机械平面化(CMP)浆料的化学成分的装置和方法。 CMP样品池具有用于传递电磁辐射的窗口。 三个波长的电磁辐射,其中一个被所述CMP浆料强烈地吸收,另外两个被所述CMP浆料吸收,其中之一被引导通过所述样品池到处理信号的检测器。 处理器利用该信号确定每个波长的传输,然后利用比尔定律确定每个波长的传输函数,并使用光学模型计算每个波长的波长依赖粒子传输,以形成三个方程组 未知数,其被解决以确定代表CMP浆料的化学成分的参数。

    Toric tool for polishing an optical surface of a lens and a method of polishing an atoric surface using the tool
    153.
    发明申请
    Toric tool for polishing an optical surface of a lens and a method of polishing an atoric surface using the tool 有权
    用于抛光透镜的光学表面的旋转工具和使用该工具抛光抛物面的方法

    公开(公告)号:US20030017783A1

    公开(公告)日:2003-01-23

    申请号:US10119022

    申请日:2002-04-10

    CPC classification number: B24B13/01 B24D7/16

    Abstract: A tool for polishing an optical surface of a lens includes a rigid support including a support surface, a first layer called the buffer made from an elastic material and covering at least part of the support surface, and a second layer called the polisher and covering at least part of the buffer. The buffer has a first surface adhering to the support surface and a second surface opposite the first surface. The polisher has a first surface adhering to the second surface of the buffer and a second surface called the polishing surface opposite the first surface and adapted to polish the optical surface of the lens by rubbing against it. The polishing surface is a toric surface and, to be able to polish an atoric optical surface, the buffer is adapted to be compressed elastically and the polisher is adapted to be deformed to espouse the atoric surface. Applications include polishing atoric optical surfaces.

    Abstract translation: 用于抛光透镜的光学表面的工具包括刚性支撑件,其包括支撑表面,称为由弹性材料制成的缓冲器并覆盖至少一部分支撑表面的第一层,以及称为抛光机的第二层,并覆盖在 缓冲区的最少部分。 缓冲器具有粘附到支撑表面的第一表面和与第一表面相对的第二表面。 抛光器具有粘附到缓冲器的第二表面的第一表面和与第一表面相对的称为抛光表面的第二表面,并且适于通过摩擦镜片来抛光镜片的光学表面。 抛光表面是复曲面,并且为了能够抛光抛光光学表面,缓冲器适于被弹性地压缩,并且抛光机适于变形以支撑表面。 应用包括抛光抛光光学表面。

    Point-of-use regulating system for use in the chemical-mechanical planarization of semiconductor wafers
    154.
    发明申请
    Point-of-use regulating system for use in the chemical-mechanical planarization of semiconductor wafers 失效
    用于半导体晶片的化学机械平面化的使用点调节系统

    公开(公告)号:US20020173230A1

    公开(公告)日:2002-11-21

    申请号:US10170152

    申请日:2002-06-11

    Inventor: Brett A. Mayes

    CPC classification number: B24B37/005 B24B49/00 G01F23/161 G01F23/76

    Abstract: The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank. In another embodiment, the fluid level sensor is replaced by a buoyant float that can seat in the upper or lower ends of the storage tank and a differential pressure sensor that senses differences in storage tank pressure when the float is seated in either of these locations to indicate full or empty tank conditions. In still another aspect, two or more regulators may be joined in a parallel flow arrangement in order to achieve precise point-of-use mixing of multi-component planarization fluids.

    Abstract translation: 本发明涉及一种用于将平坦化流体调节到半导体晶片平面化机器的装置和方法。 在一个实施例中,调节系统包括具有声学液位传感器的流体存储箱。 储罐连接到流体输送管线,其通过流量控制阀将平坦化流体输送到储罐,并通过流量传感器将稳定的平坦化流体流输送到平面化机器。 气体供应系统连接到储罐以提供系统加压。 通过控制系统实现流体流动的调节,其中流量传感器和声学液位传感器包括在闭合反馈系统中的反馈元件,以独立地控制存储罐中的压力和由控制阀允许的流体。 在替代实施例中,液位传感器包括位于储罐壁外的电容式接近传感器。 在另一个实施例中,流体液位传感器由可以位于储罐的上端或下端的浮力浮子代替,以及差压传感器,当浮子位于这些位置之一时,该差压传感器感测储罐压力的差异, 表示充满或空的坦克条件。 在另一方面,两个或更多个调节器可以并联流动布置以便实现多组分平面化流体的精确使用点混合。

    Method of and apparatus for removing material
    155.
    发明申请
    Method of and apparatus for removing material 失效
    去除材料的方法和设备

    公开(公告)号:US20020173224A1

    公开(公告)日:2002-11-21

    申请号:US10037981

    申请日:2001-11-09

    Abstract: Apparatus for removing material from a workpiece is described, in which the apparatus comprises means for advancing an abrasive tool towards the workpiece to bring an abrasive surface of the tool into contact with the surface of the workpiece, means for moving the abrasive surface relative to the workpiece to remove material from the workpiece, means for detecting a load applied to the tool by the workpiece, and means for controlling the rate of advancement of the abrasive tool towards the workpiece depending on the magnitude of the detected load.

    Abstract translation: 描述了从工件去除材料的装置,其中装置包括用于将研磨工具推向工件以使工具的研磨表面与工件的表面接触的装置,用于相对于工件移动磨料表面的装置 工件以从工件移除材料,用于检测由工件施加到工具的负载的装置,以及用于根据检测到的负载的大小来控制研磨工具朝向工件的前进速率的装置。

    Dicing machine
    156.
    发明申请
    Dicing machine 失效
    切片机

    公开(公告)号:US20020168921A1

    公开(公告)日:2002-11-14

    申请号:US10143827

    申请日:2002-05-14

    CPC classification number: B23D59/001 B23D45/027 B28D5/0076 B28D5/024

    Abstract: The flange cover covering the blade is divided into two. The second cover is turnably connected to the first cover through a shaft parallel with the spindle of the blade, and the second cover is opened and closed in connection with vertical movement of the spindle. When the spindle is moved upward for replacing the blade, the second cover is automatically turned to the opening position, and L-shaped coolant jetting nozzles are moved away from positions below the blade to positions beside the blade. Thus, the blade can be easily replaced, and an automatic blade replacing system can be applied.

    Abstract translation: 覆盖刀片的法兰盖分为两部分。 第二盖通过与叶片的主轴平行的轴可转动地连接到第一盖,并且第二盖与主轴的垂直运动相关地打开和关闭。 当主轴向上移动以更换刀片时,第二盖自动转到打开位置,并且L形冷却剂喷射喷嘴移动离开刀片下方的位置以位于刀片旁边。 因此,可以容易地更换刀片,并且可以应用自动刀片更换系统。

    Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using
    157.
    发明申请
    Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using 失效
    线性化学机械抛光装置配备可编程气动支撑台板及使用方法

    公开(公告)号:US20020142704A1

    公开(公告)日:2002-10-03

    申请号:US09820107

    申请日:2001-03-28

    CPC classification number: B24B37/16 B24B21/04 B24B49/14 B24D9/085

    Abstract: A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures. The method for controlling the polishing profile can be carried out by flowing a gas flow through the plurality of apertures and the plurality of openings to force an intimate contact between the wafer surface to be polished and the polishing pad. The plurality of openings may be suitably arranged in various control zones on the surface of the support platen with each zone equipped with a pressure detector and a flow regulator such that the gas flow pattern can be programmed to any desirable pattern for achieving polishing uniformity on a wafer surface.

    Abstract translation: 公开了一种配备有可编程气动支撑压板的线性化学机械抛光装置和用于在线性CMP工艺期间控制晶片表面上的抛光轮廓的方法。 可编程气动支撑压板与用于线性CMP装置的连续带的底表面并置放置并且对应于晶片载体的位置定位,以迫使抛光垫抵靠晶片表面进行抛光。 支撑台板具有预定厚度,穿过该厚度的多个孔和顶表面中的多个开口,其通过多个孔与气体源流体连通。 用于控制抛光轮廓的方法可以通过使气流流过多个孔和多个开口来实现,以迫使要抛光的晶片表面和抛光垫之间的紧密接触。 多个开口可以适当地布置在支撑台板的表面上的各个控制区域中,每个区域配备有压力检测器和流量调节器,使得气体流动模式可以被编程为任何期望的图案,以实现在 晶圆表面。

    Polishing end point detecting device for wafer polishing apparatus
    158.
    发明申请
    Polishing end point detecting device for wafer polishing apparatus 失效
    抛光终点检测装置用于晶片抛光装置

    公开(公告)号:US20020115380A1

    公开(公告)日:2002-08-22

    申请号:US10021007

    申请日:2001-12-19

    CPC classification number: B24B37/013 B24B49/12

    Abstract: White light from a light source is applied onto a wafer through an observation window which is formed on a polishing pad, and a spectrometric analysis is performed to the light which has been reflected on the wafer, whereby a polishing end point of the wafer is detected. In this case, an amount of the reflected light is measured and brightness of the light source is corrected so that the amount of the reflected light is constant. Thereby, the polishing end point is accurately detected.

    Abstract translation: 来自光源的白光通过形成在抛光垫上的观察窗被施加到晶片上,并且对已经在晶片上反射的光进行光谱分析,由此检测晶片的抛光终点 。 在这种情况下,测量反射光的量并校正光源的亮度,使得反射光的量恒定。 由此,精确地检测出研磨终点。

    Method of determining current position data of a machining tool and apparatus therefor
    159.
    发明申请
    Method of determining current position data of a machining tool and apparatus therefor 有权
    确定加工工具的当前位置数据的方法及其装置

    公开(公告)号:US20020102915A1

    公开(公告)日:2002-08-01

    申请号:US10059058

    申请日:2002-01-30

    Inventor: Franz Basler

    Abstract: The current positioning data of a machining tool with regard to a reference surface of a workpiece or of a body connected to the workpiece, is determined. The tool and the workpiece to be machined are relatively moveable toward and away from one another, and the rotary speed of a drive motor for the tool is set to a starting rotary speed which is so low that, when the tool comes into contact with the reference surface, its rotary speed is measurably reduced, the reference surface is moved past the tool before the tool is in contact and while the tool is in contact. As a result, the braking moments in the bearings are increased, and the drive motor comes to a stop quicker.

    Abstract translation: 确定加工工具相对于工件或连接到工件的主体的参考表面的当前定位数据。 工件和待加工的工件可相对于彼此相对移动,并且用于工具的驱动电动机的转速被设定为如此低的起动转速,即当工具与 参考表面,其转速可测量地减小,在工具接触之前和工具接触时,参考表面移动通过工具。 结果,轴承中的制动力矩增加,并且驱动电机更快地停止。

    Semiconductor processing methods of removing conductive material
    160.
    发明申请
    Semiconductor processing methods of removing conductive material 有权
    去除导电材料的半导体加工方法

    公开(公告)号:US20020061714A1

    公开(公告)日:2002-05-23

    申请号:US09534820

    申请日:2000-03-23

    Abstract: The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.

    Abstract translation: 本发明包括从半导体衬底的表面上电化学 - 机械去除至少一些导电材料的半导体处理方法。 阴极设置在晶片的第一位置处,并且阳极设置在晶片的第二位置处。 用抛光垫抛光表面抛光导电材料。 抛光发生在导电材料的区域而不是在另一区域。 抛光发生的区域被定义为抛光操作位置。 抛光操作位置从衬底的所述第二位置横跨衬底的表面移动到衬底的所述第一位置。 当抛光操作位置在第一和第二位置之间时,抛光操作位置不会从所述第一位置移动到所述第二位置。 本发明还包括从半导体材料晶片的表面上去除至少一些导电材料的半导体加工方法。 抛光垫从晶片的中心区域朝着晶片的周边跨越晶片的上表面移位,并且不会从周边移动到中心区域。

Patent Agency Ranking