Abstract:
A grinding head guiding apparatus is disclosed. The grinding head is driven by the linear motor which is constituted of a coil attached on an underside surface of the grinding head and a magnet attached on an upside surface. Horizontal guiding members are fixed on the base, and the grinding head is guided to the horizontal guide members. Then, a height of a portion opposing the coil and the magnet is approximately same as a height of the horizontal guide members guiding the grinding head. Besides, temporary supporting members are attached on the base so as to avoid sticking the coil to the magnet, when the coil is detached from the grinding head. Further, the grinding head has ribs therein, which define an approximately trapezoid-shaped space disposed a center of the grinding head and triangle-shaped spaces disposed both side of the trapezoid-shaped space.
Abstract:
An apparatus and method for determining the chemical content of a chemical mechanical planarization (CMP) slurry. A CMP sample cell has windows for passing electromagnetic radiation. Three wavelengths of electromagnetic radiation, one of which is strongly absorbed by said CMP slurry and the other two of which are weakly absorbed by said CMP slurry, are directed through said sample cell to a detector, which processes a signal. A processor utilizes the signal to determine the transmission at each wavelength, then utilizes Beer's law to determine a transmission function for each wavelength, and calculates the wavelength dependent particle transmission for each wavelength using an optical model, to form a system of three equations in three unknowns, which are solved to determine a parameter representative of the chemical content of the CMP slurry.
Abstract:
A tool for polishing an optical surface of a lens includes a rigid support including a support surface, a first layer called the buffer made from an elastic material and covering at least part of the support surface, and a second layer called the polisher and covering at least part of the buffer. The buffer has a first surface adhering to the support surface and a second surface opposite the first surface. The polisher has a first surface adhering to the second surface of the buffer and a second surface called the polishing surface opposite the first surface and adapted to polish the optical surface of the lens by rubbing against it. The polishing surface is a toric surface and, to be able to polish an atoric optical surface, the buffer is adapted to be compressed elastically and the polisher is adapted to be deformed to espouse the atoric surface. Applications include polishing atoric optical surfaces.
Abstract:
The present invention is directed to an apparatus and method for flow regulation of planarization fluids to a semiconductor wafer planarization machine. In one embodiment, the regulating system includes a fluid storage tank with an acoustic fluid level sensor. The storage tank is connected to a fluid delivery line that delivers planarization fluid to the storage tank through a flow control valve and delivers a regulated flow of planarization fluid to a planarization machine through a flow sensor. A gas supply system is connected to the storage tank to provide system pressurization. Regulation of the fluid flow is achieved by a control system in which the flow sensor and the acoustic fluid level sensor comprise feedback elements in a closed feedback system to independently control the pressure in the storage tank and the fluid admitted by the control valve. In an alternate embodiment, the fluid level sensor is comprised of capacitive proximity sensors located outside the wall of the storage tank. In another embodiment, the fluid level sensor is replaced by a buoyant float that can seat in the upper or lower ends of the storage tank and a differential pressure sensor that senses differences in storage tank pressure when the float is seated in either of these locations to indicate full or empty tank conditions. In still another aspect, two or more regulators may be joined in a parallel flow arrangement in order to achieve precise point-of-use mixing of multi-component planarization fluids.
Abstract:
Apparatus for removing material from a workpiece is described, in which the apparatus comprises means for advancing an abrasive tool towards the workpiece to bring an abrasive surface of the tool into contact with the surface of the workpiece, means for moving the abrasive surface relative to the workpiece to remove material from the workpiece, means for detecting a load applied to the tool by the workpiece, and means for controlling the rate of advancement of the abrasive tool towards the workpiece depending on the magnitude of the detected load.
Abstract:
The flange cover covering the blade is divided into two. The second cover is turnably connected to the first cover through a shaft parallel with the spindle of the blade, and the second cover is opened and closed in connection with vertical movement of the spindle. When the spindle is moved upward for replacing the blade, the second cover is automatically turned to the opening position, and L-shaped coolant jetting nozzles are moved away from positions below the blade to positions beside the blade. Thus, the blade can be easily replaced, and an automatic blade replacing system can be applied.
Abstract:
A linear chemical mechanical polishing apparatus that is equipped with a programmable pneumatic support platen and a method for controlling the polishing profile on a wafer surface during a linear CMP process are disclosed. The programmable pneumatic support platen is positioned juxtaposed to a bottom surface of a continuous belt for the linear CMP apparatus and positioned corresponding to a position of the wafer carrier so as to force the polishing pad against the wafer surface to be polished. The support platen has a predetermined thickness, a plurality of apertures through the thickness and a plurality of openings in a top surface in fluid communication with a gas source through the plurality of apertures. The method for controlling the polishing profile can be carried out by flowing a gas flow through the plurality of apertures and the plurality of openings to force an intimate contact between the wafer surface to be polished and the polishing pad. The plurality of openings may be suitably arranged in various control zones on the surface of the support platen with each zone equipped with a pressure detector and a flow regulator such that the gas flow pattern can be programmed to any desirable pattern for achieving polishing uniformity on a wafer surface.
Abstract:
White light from a light source is applied onto a wafer through an observation window which is formed on a polishing pad, and a spectrometric analysis is performed to the light which has been reflected on the wafer, whereby a polishing end point of the wafer is detected. In this case, an amount of the reflected light is measured and brightness of the light source is corrected so that the amount of the reflected light is constant. Thereby, the polishing end point is accurately detected.
Abstract:
The current positioning data of a machining tool with regard to a reference surface of a workpiece or of a body connected to the workpiece, is determined. The tool and the workpiece to be machined are relatively moveable toward and away from one another, and the rotary speed of a drive motor for the tool is set to a starting rotary speed which is so low that, when the tool comes into contact with the reference surface, its rotary speed is measurably reduced, the reference surface is moved past the tool before the tool is in contact and while the tool is in contact. As a result, the braking moments in the bearings are increased, and the drive motor comes to a stop quicker.
Abstract:
The invention includes a semiconductive processing method of electrochemical-mechanical removing at least some of a conductive material from over a surface of a semiconductor substrate. A cathode is provided at a first location of the wafer, and an anode is provided at a second location of the wafer. The conductive material is polished with the polishing pad polishing surface. The polishing occurs at a region of the conductive material and not at another region. The region where the polishing occurs is defined as a polishing operation location. The polishing operation location is displaced across the surface of the substrate from said second location of the substrate toward said first location of the substrate. The polishing operation location is not displaced from said first location toward said second location when the polishing operation location is between the first and second locations. The invention also includes a semiconductor processing method of removing at least some of a conductive material from over a surface of a semiconductive material wafer. A polishing pad is displaced across an upper surface of the wafer from a central region of the wafer toward a periphery of the wafer, and is not displaced from the periphery to the central region.