公开(公告)号：US20230139917A1

公开(公告)日：2023-05-04

申请号：US18050128

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Viraj Madhiwala ,  Daniele Chiappe ,  Marko Tuominen ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGuy Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing dielectric material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, performing a thermal deposition subcycle performing a thermal deposition subcycle to selectively deposit a first material on the first surface, performing a plasma deposition subcycle to selectively deposit a second material on the first surface; wherein at least one of the first material and the second material comprises silicon and oxygen.

公开(公告)号：US20230137026A1

公开(公告)日：2023-05-04

申请号：US17973903

申请日：2022-10-26

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Koei Aida ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

公开(公告)号：US20230129291A1

公开(公告)日：2023-04-27

申请号：US17970987

申请日：2022-10-21

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yoshiyuki Kikuchi

IPC: H01L21/3065 ,  H01L21/67

Abstract: A method for etching a bevel edge of a substrate. The method includes providing a substrate with a bevel edge after a thin film has been deposited on a top surface of the substrate and rotating the substrate about its center axis. The method also includes, during the rotating, etching the bevel edge by directing flow of atmospheric plasma onto the bevel edge. The flow is parallel to the top surface of the substrate, such as orthogonal to a plane containing a region of the bevel edge being etched by the atmospheric plasma, which may be O2 atmospheric plasma. The etching is performed without loss of thickness of the thin film on the top surface at a radius spaced apart from an outer radius of the substrate. The substrate may be a silicon (Si) wafer, and the thin film may be a carbon film, amorphous carbon, SiC, SiO, or SiN.

公开(公告)号：US20230127833A1

公开(公告)日：2023-04-27

申请号：US18048188

申请日：2022-10-20

Applicant: ASM IP Holding B.V.

Inventor： Steven Van Aerde ,  Juan Su

IPC: H01L21/02

Abstract: A method and a wafer processing furnace for forming a doped polysilicon layer on a plurality of substrates is provided. In a preferred embodiment, the method comprises providing a plurality of substrates to a process chamber. It also comprises executing a deposition cycle comprising providing a silicon-containing precursor to the process chamber thereby depositing, on the plurality of substrates, an undoped silicon layer until a pre-determined thickness is reached and providing the process chamber with a flow of a dopant precursor gas without providing the silicon-containing precursor to the process chamber. The method also comprises performing a heat treatment process, thereby forming the doped polysilicon layer.

公开(公告)号：US20230115806A1

公开(公告)日：2023-04-13

申请号：US17953502

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.

公开(公告)号：US11624113B2

公开(公告)日：2023-04-11

申请号：US17011828

申请日：2020-09-03

Applicant: ASM IP HOLDING B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/48 ,  C23C16/44 ,  C23C16/52

Abstract: Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

公开(公告)号：US11624112B2

公开(公告)日：2023-04-11

申请号：US17323887

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Tiina McKee ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/455 ,  C01G39/06 ,  G01N30/72

Abstract: Processes for forming Mo and W containing thin films, such as MoS2, WS2, MoSe2, and WSe2 thin films are provided. Methods are also provided for synthesizing Mo or W beta-diketonate precursors. Additionally, methods are provided for forming 2D materials containing Mo or W.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/02

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US20230099798A1

公开(公告)日：2023-03-30

申请号：US17950254

申请日：2022-09-22

Applicant: ASM IP Holding B.V.

Inventor： KyungEun Lee ,  HaRim Kim ,  IkDu Nam

IPC: C23C16/455

Abstract: A showerhead for supplying a gas includes a showerhead body having an upper surface and a lower surface opposite to the upper surface, and a plurality of through-holes formed in the showerhead body so that the gas passes through from the upper surface toward the lower surface, wherein a size of a cross-sectional area of each through-hole of the plurality of through-holes in the lower surface is the same, while the size of the cross-sectional area of each through-hole in the upper surface increases from a center of the showerhead toward an edge thereof.

公开(公告)号：US11615980B2

公开(公告)日：2023-03-28

申请号：US17544982

申请日：2021-12-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Zecheng Liu

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/67 ,  H01J37/32

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.