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    Estimation Algorithm for Discrete-Time Uncertain Stochastic Systems and Device Relating Thereto
    171.
    发明申请
    Estimation Algorithm for Discrete-Time Uncertain Stochastic Systems and Device Relating Thereto 有权
    离散时间不确定随机系统及其相关设备的估计算法

    公开(公告)号：US20140188774A1

    公开(公告)日：2014-07-03

    申请号：US13733181

    申请日：2013-01-03

    Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

    Inventor： Jemin George

    IPC: G06N5/02

    CPC classification number: G05B23/0254 ,  G06N7/08

    Abstract: An apparatus and method for estimation of a system having state variables representing the state of the system comprising predicting the estimate of the state variables along with the uncertainties in the state variables; observing a measurement of at least one state variable corrupted with some amount of error; updating the estimates of the state variables using a weighted average, with more weight being given to estimates with higher certainty; and providing an estimator input to update the estimates of the state variables, the estimator input operating to provide asymptotic convergence of the mean estimation error in all of the state variables in the presence of persistent excitation or disturbance that is not asymptotically decaying to zero.

    Abstract translation: 一种用于估计具有表示系统状态的状态变量的系统的装置和方法，包括预测状态变量的估计以及状态变量中的不确定性; 观察至少有一个状态变量的测量被损坏了一定量的误差; 使用加权平均值更新状态变量的估计值，更多的权重给予更高确定性的估计; 并且提供用于更新状态变量的估计的估计器输入，所述估计器输入操作以在存在不渐近衰减为零的持续激励或干扰的情况下在所有状态变量中提供平均估计误差的渐近收敛。

    RING-SHAPED TRANSISTORS PROVIDING REDUCED SELF-HEATING
    172.
    发明申请
    RING-SHAPED TRANSISTORS PROVIDING REDUCED SELF-HEATING 有权
    提供减少自加热的环形晶体管

    公开(公告)号：US20140175514A1

    公开(公告)日：2014-06-26

    申请号：US13724598

    申请日：2012-12-21

    Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

    Inventor： Ali Darwish ,  Hingloi Alfred Hung

    IPC: H01L29/423 ,  H01L29/40

    CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/41758 ,  H01L29/7786 ,  H01L29/812

    Abstract: A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.

    Abstract translation: 环形晶体管包括一组门。 该组的每个栅极设置在相应的源极和相应的漏极之间。 所述一组栅极被布置成使得所述一组栅极不能与通过栅极绘制的少于三条假想直线对准，其中一条假想直线仅通过该组栅极中的每一条。

    GALVANIC POROUS SILOCON COMPOSITES FOR NANOENERGETICS AND MONOLITHICALLY INTEGRATED IGNITOR
    173.
    发明申请
    GALVANIC POROUS SILOCON COMPOSITES FOR NANOENERGETICS AND MONOLITHICALLY INTEGRATED IGNITOR 审中-公开
    用于纳米级和单层综合点火器的气体多孔硅胶复合材料

    公开(公告)号：US20130149460A1

    公开(公告)日：2013-06-13

    申请号：US13713043

    申请日：2012-12-13

    Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I

    Inventor： Collin R. Becker ,  Luke J. Currano ,  Wayne A. Churaman ,  Conrad R. Stoldt

    IPC: F23Q7/22

    CPC classification number: F23Q7/22

    Abstract: Porous silicon (PS) films composed of pores with diameters less than 3 nm are fabricated using a galvanic etching approach that does not require an external power supply. A highly reactive, nanoenergetic composite is then created by impregnating the nanoscale pores with the strong oxidizer, sodium perchlorate (NaClO4). The combustion propagation velocity of the energetic composite is measured using microfabricated diagnostic devices in conjunction with high-speed optical imaging up to 930,000 frames per second. Combustion velocities averaging 3,050 m/s are observed for PS films with specific areas of ˜840 m2/g and porosities of about 65-67%. Galvanic etching may also be used to fabricate other porous silicon morphologies and also strong oxidizers other than NaClO4 could be used to create a nanoenergetic porous silicon composite.

    Abstract translation: 由直径小于3nm的孔组成的多孔硅（PS）膜是使用不需要外部电源的电镀蚀刻方法制造的。 然后通过用强氧化剂，高氯酸钠（NaClO4）浸渍纳米尺度孔来产生高反应性的纳米能复合材料。 能量复合材料的燃烧传播速度使用微加工诊断装置结合高达每秒930,000帧的高速光学成像来测量。 对于具有约840m 2 / g的特定面积和约65-67％的孔隙率的PS膜，观察到平均为3050m / s的燃烧速度。 也可以使用电蚀刻来制造其它多孔硅形态，并且还可以使用NaClO 4以外的强氧化剂来形成纳米能多孔硅复合材料。

    Methodology for in situ characterizing and calibrating an entangled photon distribution system
    177.
    发明授权
    Methodology for in situ characterizing and calibrating an entangled photon distribution system 有权

    公开(公告)号：US11009375B2

    公开(公告)日：2021-05-18

    申请号：US16002906

    申请日：2018-06-07

    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

    Inventor： Daniel E. Jones ,  Brian T. Kirby ,  Michael Brodsky

    IPC: G01J1/42 ,  G01D5/353 ,  H04L9/08 ,  H01S3/108 ,  H01S3/094 ,  G01N21/65

    Abstract: A novel methodology for characterizing and calibrating an entangled photon distribution system is disclosed. The entangled photon distribution system includes at least a source of entangled photon pairs, two photon detectors which detect photons among two channels and a controller. The methodology includes: for at least two different operational setting levels of the source of entangled photon pairs, measuring count rates for photons detected by the two photon detectors, individually and coincidently; fitting the measured individual and coincidence count rate data for the at least two different operational setting levels with theoretical models of detection probability; and determining operational parameters of the system from the fitting. The determined operational parameters of the system include the rate of generated entangled photon pairs by the source, the rates of Raman-scattered photons generated in the first and second channels, respectively, and the efficiency of the two photon detectors, respectively.

    Photodetector using resonance and related method
    180.
    发明授权
    Photodetector using resonance and related method 有权

    公开(公告)号：US10957804B2

    公开(公告)日：2021-03-23

    申请号：US15612675

    申请日：2017-06-02

    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

    Inventor： Kwong-Kit Choi

    IPC: H01L31/0232 ,  G06F17/50 ,  H01L31/0352 ,  H01L27/144 ,  H01L31/0296 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/054 ,  H01L31/056 ,  H01L31/101 ,  G06F30/30 ,  B82Y20/00

    Abstract: A photodetector comprising a contact layer; an absorbing region positioned such that light admitted passes into the absorbing region; a diffractive region comprising at least one diffractive element operating to diffract light into the absorbing region; the configuration of the photodetector being determined by computer simulation to determine an optimal diffractive region and absorbing region configuration for optimal quantum efficiency for at least one predetermined wavelength range, the diffractive region operating to diffract light entering through the contact layer such that phases of diffracted waves from locations within the photodetector including waves reflected by sidewalls and waves reflected by the diffractive elements form a constructive interference pattern inside the absorbing region. A method of designing a photodetector comprises using a computer simulation to determine an optimal configuration for at least one wavelength range occurring when waves reflected by the diffractive element form a constructive interference pattern inside the absorbing region.

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