公开(公告)号：US20210375600A1

公开(公告)日：2021-12-02

申请号：US17333533

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Keith Tatseun Wong ,  Antony K. Jan

IPC: H01J37/32 ,  C23C16/04 ,  H01L21/027 ,  H01L21/32

Abstract: The present disclosure generally relates to a substrate processing chamber, a substrate processing apparatus, and a substrate processing method for self-assembled monolayer (SAM) deposition of low vapor pressure organic molecules (OM) followed by further substrate processing, such as atomic layer deposition.

公开(公告)号：US11145808B2

公开(公告)日：2021-10-12

申请号：US16681351

申请日：2019-11-12

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Minrui Yu ,  Chando Park ,  Mang-Mang Ling ,  Jaesoo Ahn ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Mahendra Pakala ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：US20210234091A1

公开(公告)日：2021-07-29

申请号：US16752013

申请日：2020-01-24

Applicant: APPLIED Materials, Inc.

Inventor： Jong Mun Kim ,  Mang-Mang Ling ,  Soham Asrani ,  Lin Xue ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10

Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

公开(公告)号：US20210189555A1

公开(公告)日：2021-06-24

申请号：US17120494

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Mei-Yee Shek ,  Bhargav S. Citla ,  Joshua Rubnitz ,  Jethro Tannos ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/36 ,  C01B21/082 ,  C09D1/00 ,  C23C16/50 ,  C23C16/44

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

公开(公告)号：US11003080B2

公开(公告)日：2021-05-11

申请号：US16138142

申请日：2018-09-21

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Srinivas D. Nemani

IPC: G03F7/20 ,  G03F7/26 ,  H01J11/22 ,  H01J11/32 ,  H01J37/32 ,  H05H1/48 ,  H05H1/24

Abstract: A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.

公开(公告)号：US10950429B2

公开(公告)日：2021-03-16

申请号：US16396167

申请日：2019-04-26

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

IPC: H01L21/02 ,  H01L21/033 ,  C23C14/06 ,  C23C14/02 ,  C23C14/35

Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

公开(公告)号：US10927449B2

公开(公告)日：2021-02-23

申请号：US15857384

申请日：2017-12-28

Applicant: Applied Materials, Inc.

Inventor： Jingjing Liu ,  Ludovic Godet ,  Srinivas D. Nemani ,  Yongmei Chen ,  Anantha K. Subramani

IPC: C23C14/34 ,  H01L21/265 ,  H01J37/34 ,  C23C14/50 ,  C23C14/35 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223

Abstract: Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

公开(公告)号：US10916426B2

公开(公告)日：2021-02-09

申请号：US16403088

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： Keith Tatseun Wong ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02 ,  H01L21/67 ,  C01B19/00

Abstract: Embodiments of the present disclosure relate to forming a two-dimensional crystalline dichalcogenide by positioning a substrate in an annealing apparatus. The substrate includes an amorphous film of a transition metal and a chalcogenide. The film is annealed at a temperature from 500° C. to 1200° C. In response to the annealing, a two-dimensional crystalline structure is formed from the film. The two-dimensional crystalline structure is according to a formula MX2, M includes one or more of molybdenum (Mo) or tungsten (W) and X includes one or more of sulfur (S), selenium (Se), or tellurium (Te).

公开(公告)号：US10825665B2

公开(公告)日：2020-11-03

申请号：US14703922

申请日：2015-05-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Huixiong Dai ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Nitin Krishnarao Ingle

IPC: H01J37/32 ,  H01J37/305 ,  H01J37/317

Abstract: Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system.

公开(公告)号：US10586707B2

公开(公告)日：2020-03-10

申请号：US16189429

申请日：2018-11-13

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Raymond Hung ,  Namsung Kim ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Jong Choi ,  Christopher Ahles ,  Andrew Kummel

IPC: H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  C23C16/46 ,  C23C16/42 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02

Abstract: Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.