公开(公告)号：US20240331975A1

公开(公告)日：2024-10-03

申请号：US18129285

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Shuchi Sunil Ojha ,  Soham Asrani ,  Praket Prakash Jha ,  Bhargav S. Citla ,  Jingmei Liang

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32146 ,  H01L21/02532 ,  H01L21/0262 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/332 ,  H01J2237/3343 ,  H01J2237/336

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.

公开(公告)号：US20230377875A1

公开(公告)日：2023-11-23

申请号：US18229285

申请日：2023-08-02

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01L21/3065 ,  H01J37/32146 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US20210234091A1

公开(公告)日：2021-07-29

申请号：US16752013

申请日：2020-01-24

Applicant: APPLIED Materials, Inc.

Inventor： Jong Mun Kim ,  Mang-Mang Ling ,  Soham Asrani ,  Lin Xue ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10

Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

公开(公告)号：US11862458B2

公开(公告)日：2024-01-02

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

公开(公告)号：US20230071366A1

公开(公告)日：2023-03-09

申请号：US17469529

申请日：2021-09-08

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Soham Asrani ,  Joshua Rubnitz ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01J37/32

Abstract: Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.