公开(公告)号：US20190355869A1

公开(公告)日：2019-11-21

申请号：US16409472

申请日：2019-05-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Unger ,  Franz Eberhard ,  Fabian Kopp ,  Katharina Christoph

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/26

Abstract: An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.

公开(公告)号：US10483444B2

公开(公告)日：2019-11-19

申请号：US15757141

申请日：2016-08-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald Jäger ,  Jürgen Moosburger ,  Herbert Brunner

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/54 ,  H01L33/50 ,  H01L23/00 ,  H01L33/48 ,  H01L33/52

Abstract: A method of producing an optoelectronic semiconductor component includes providing a carrier including two metal layers, wherein the metal layers are detachable from one another, securing an optoelectronic semiconductor chip on the first metal layer of the carrier, and mechanically detaching the second metal layer from the first metal layer.

公开(公告)号：US10483439B2

公开(公告)日：2019-11-19

申请号：US15316144

申请日：2015-06-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Britta Göötz

IPC: H01L33/44 ,  H01L33/50 ,  H01L33/58

Abstract: The invention relates to an optoelectronic component (10) comprising —a radiation-emitting semiconductor chip (2), —a conversion element (8) which is suitable for converting at least one part of the radiation (12) emitted by the semiconductor chip (2) into a converted radiation (13), said converted radiation (13) having a longer wavelength than the emitted radiation (12), and —a cover (9) which is permeable at least to the converted radiation (13) and which follows the conversion element (8) in a main emission direction, wherein —the conversion element (8) comprises a quantum dot converter material (7), —the conversion element (8) is arranged on a cover (9) inner face (15) facing the semiconductor chip, and —the cover has silicon (9) or consists of silicon.

公开(公告)号：US10480748B2

公开(公告)日：2019-11-19

申请号：US15572551

申请日：2016-05-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ulrich Streppel

IPC: F21V5/00 ,  G02B19/00 ,  G03B15/05 ,  G02B27/09 ,  F21V5/04 ,  F21V7/22 ,  G02B27/30 ,  F21Y115/10 ,  F21V5/02

Abstract: A lens includes a base body having a light incidence face through which light can enter the base body and a light exit face, through which light which has entered the base body can emerge, the light exit face includes a microlens structure having a plurality of microlenses, the light incidence face has at least two collimator segments that collimate light and a light entry region formed differently from the collimator segments, the base body has at least two back-reflection regions respectively assigned to one of the two collimator segments, to reflect back light collimated by a corresponding collimator segment, in a direction of the corresponding collimator segment, and the base body is a reflection region to reflect light that has entered through the light incidence region in the direction of the microlens structure so that the reflected light can emerge from the base body through the microlens structure.

公开(公告)号：US10475968B1

公开(公告)日：2019-11-12

申请号：US16039556

申请日：2018-07-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Yi Zheng ,  Victor Perez

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/26 ,  H01L25/16

Abstract: In one embodiment, an optoelectronic component includes a semiconductor chip, which is able to emit radiation. A conversion element comprises at least one wavelength converting phosphor dispersed in a matrix material. The matrix material is a low-melting phosphate glass and water resistant. The optoelectronic component emits in operation warm white light.

公开(公告)号：US10475965B2

公开(公告)日：2019-11-12

申请号：US16071876

申请日：2017-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz Eberhard

IPC: H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/32 ,  H01L27/146 ,  H01L27/32 ,  H01L27/28 ,  H01L25/16 ,  H01L27/14

Abstract: An optoelectronic semiconductor chip and a method for manufacturing an optoelectronic semiconductor chip are disclosed. In an embodiment the semiconductor chip includes a semiconductor body having a main surface and at least one side surface arranged transversely to the main surface, a contact layer arranged on the main surface of the semiconductor body and containing an electrically conductive material, a filter layer arranged on the contact layer and containing a dielectric material and a conductive layer arranged on the filter layer and containing an electrically conductive material, wherein a thickness of the conductive layer is greater than a thickness of the contact layer, wherein the contact layer and the conductive layer comprise a transparent electrically conductive oxide, and wherein the filter layer is multi-layered and comprises at least two sublayers which differ in their refractive index.

公开(公告)号：US10475951B2

公开(公告)日：2019-11-12

申请号：US14780982

申请日：2014-03-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Löffler ,  Tobias Meyer ,  Adam Bauer ,  Christian Leirer

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/24 ,  H01L21/02 ,  H01L33/06 ,  H01L33/30 ,  H01L25/16 ,  H01L33/32

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A substrate is provided and a first layer is grown. An etching process is carrying out to initiate V-defects. A second layer is grown and a quantum film structure is grown. An optoelectronic semiconductor chip is also disclosed. The method can be used to produce the optoelectronic semiconductor chip.

公开(公告)号：US10472735B2

公开(公告)日：2019-11-12

申请号：US15572486

申请日：2016-04-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： John Kelso ,  Alan Piquette ,  David Johnston

IPC: H01L33/50 ,  C30B29/28 ,  C04B35/44 ,  C04B35/64 ,  C09K11/77 ,  C30B1/02 ,  C30B29/34 ,  C30B29/38 ,  C30B29/40 ,  C04B35/16 ,  C04B35/581 ,  C04B35/584 ,  C04B35/587 ,  C04B35/597

Abstract: There is herein described a method of making a single crystal wavelength conversion element from a polycrystalline wavelength conversion element, a single crystal wavelength conversion element, and a light source containing same. By making the single crystal wavelength conversion element from a polycrystalline wavelength conversion element, the method provides greater flexibility in creating single crystal wavelength conversion elements as compared to melt grown methods for forming single crystals. Advantages may include higher activator contents, forming more complex shapes without machining, providing a wider range of possible activator gradients and higher growth rates at lower temperatures.

公开(公告)号：US20190341526A1

公开(公告)日：2019-11-07

申请号：US16462349

申请日：2017-12-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Fabian Kopp ,  Attila Molnar

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence, a transparent substrate, at least one contact trench, at least one insulating trench, at least one current distribution trench, at least in the insulating trench, an electrically insulating mirror layer that reflects radiation generated in an active layer, at least one metallic current web in the contact trench configured for a current conduction along the contact trench and supplying current to a first semiconductor region, and at least one metallic busbar in the current distribution trench that energizes a second semiconductor region, wherein the contact trench, the isolating trench and the current distribution trench extend from a side of the second semiconductor region facing away from the substrate through the active layer into the first semiconductor region, and the contact trench is completely surrounded by the insulating trench, and the current distribution trench lies only outside the insulating trench.

公开(公告)号：US10465284B2

公开(公告)日：2019-11-05

申请号：US15745084

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Rückerl

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L51/52 ,  H01L33/44

Abstract: A method for producing an apparatus, an apparatus and an optoelectronic component are disclosed. In an embodiment the method includes providing a carrier, depositing an amorphous ALD layer on the carrier using an ALD method and recrystallizing the amorphous ALD layer into a crystalline layer.