Abstract:
In a data transmission system, one or more signal supply voltages for generating the signaling voltage of a signal to be transmitted are generated in a first circuit and forwarded from the first circuit to a second circuit. The second circuit may use the forwarded signal supply voltages to generate another signal to be transmitted back from the second circuit to the first circuit, thereby obviating the need to generate signal supply voltages separately in the second circuit. The first circuit may also adjust the signal supply voltages based on the signal transmitted back from the second circuit to the first circuit. The data transmission system may employ a single-ended signaling system in which the signaling voltage is referenced to a reference voltage that is a power supply voltage such as ground, shared by the first circuit and the second circuit.
Abstract:
A memory system supports high-performance and low-power modes. The memory system includes a memory core and a core interface. The memory core employs core supply voltages that remain the same in both modes. Supply voltages and signaling rates for the core interface may be scaled down to save power. Level shifters between the memory core and core interface level shift signals as needed to accommodate the signaling voltages used by the core interface in the different modes.
Abstract:
A content addressable memory can include an array of memory cells having multiple memory elements, such as RRAM elements, to store data based on a plurality resistive states. A common switching device, such as a transistor, can electrically couple a plurality of the multiple memory elements with a matchline during read, write, erase, and search operations. In search operations, the memory cells can receive a search word and selectively discharge a voltage level on the matchline based on the data stored by the memory elements and the search word provided to the memory elements. The voltage level of the matchline can indicate whether the search word matched the data stored in the memory cells. The content addressable memory can potentially have an effective memory cell sizing under 0.5F2 depending on the number of layers of memory cells formed over the switching device.
Abstract:
A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.