Abstract:
An embodiment of the invention pertains to an nth order selector switch device comprising: a first arm comprising n transistors series-connected between a first input to which a 0-ranking potential is applied, and an output; and a second arm comprising n transistors series-connected between a second input to which a 0-ranking potential is applied, and the output. The device according to the invention also comprises: a means to produce n−1 potentials ranked 1 to n−1 included between the potential ranked 0 and the potential ranked n; and a driving means for the production, from the n+1 potentials ranked 0 to n, of control signals suited to driving the gates of the transistors of the first arm and the gates of the transistors of the second arm so that the transistors of one of the arms are on and the transistors of the other arm are off depending on the value of the n-ranking potential relative to the value of the 0-ranking potential.
Abstract:
A control circuit of a power supply delivering a supply current to an inductor connected in series with the horizontal deflection yoke of a cathode ray tube display, the inductor being the primary coil of a transformer operatively connected for delivering a rectified low-pass filtered biasing voltage to the anode of the display, the low-pass filtering having a first time constant corresponding to the duration of a plurality of pictures, the control circuit having feedback circuitry for generating a monitoring voltage substantially proportional to the biasing voltage and for controlling the supply current to keep the monitoring voltage equal to a reference voltage; and feedforward circuitry for measuring the cathode current and for adding to the monitoring voltage a compensation voltage corresponding to the cathode current, low-pass filtered with a second time constant corresponding to the duration of a small number of lines and high-pass filtered with the first time constant.
Abstract:
The present invention concerns an image sensor having a plurality of pixels each including a photosensor, a first node having a first capacitance connected to the photosensor, a second node having a second capacitance and selectively connected to the photosensor, and reading circuitry operable to read independently a first voltage value stored at the first node and a second voltage value stored at the second node.
Abstract:
A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.
Abstract:
Attenuation cell comprising first and second differential pairs of bipolar transistors. A gain control device applies a voltage VA−VB between the bases of both differential pairs and comprises a set of three diodes in which a current IA, a current IB and the sum IA+IB of both preceding currents flow, respectively. The two diodes seeing current IB and IA+IB generate a voltage, respectively VB and VC, and the difference between these two voltages is used to generate a value Iz used in a control loop. A desired value Vct is transformed into information Ix, then into information Iy proportional to absolute temperature T, and an error amplifier uses information Iy−Iz and generates currents IA and IB by minimizing this difference.
Abstract:
Error detection and correction codes are provided. For a word of m bits that is to be coded, a vector with m components, each component corresponding to a bit of the word, is formed. The vector is multiplied, using a computing circuit, by a parity control matrix. The parity control matrix includes at least one couple of complementary lines.
Abstract:
The invention concerns a monitoring device (18) integrated to a microprocessor chip (12) executing a series of instructions comprising: device (26) for producing simultaneously several types of monitoring messages of the microprocessor, a buffer (28) divided into several blocks (A, B, C, D, E) each of which is designed to store only messages of one of the types capable of being produced simultaneously, the size of each block depending on the maximum frequency at which the messages can be stored, and device (26) for, each time one or more messages are simultaneously stored in the blocks (A, B, C, D, E) of the buffer (28), storing in a predetermined block (F) of the buffer a coded value representing said block(s) of the buffer.
Abstract:
A circuit for controlling a bidirectional switch referenced to a first reference voltage by a control circuit supplied by a first voltage and referenced to a second reference voltage. The supply voltage of the control circuit is connected by a diode to a coupling circuit comprising a node, this node being connected to the collector of an NPN transistor having its emitter connected to the second reference voltage and having its base receiving the output of the control circuit, to a first terminal of a capacitor having its second terminal connected to the first reference voltage, to the emitter of a PNP transistor having its base connected to the collector of the transistor, and having its collector connected to the control terminal of the bidirectional switch.
Abstract:
A method of secure booting of an SMP architecture apparatus provides for the formation of a secure domain comprising a first processor and a part of a shared memory, before the booting of the operating system of the first processor. The operating system of a second processor is booted only after the reciprocal authentication with the first processor and, in case of authentication, the extension of the secure domain to the second processor.
Abstract:
The present invention relates to a method for programming a memory cell having a determined transconductance curve. The programming of the memory cell comprises a series of programming cycles each comprising a step of verifying the state of the memory cell. According to the present invention, the verify step comprises a first read of the memory cell with a first read voltage greater than a reference threshold voltage, and a second read of the memory cell with a second read voltage lower than or equal to the reference threshold voltage. The memory cell is considered not to be in the programmed state if first- and second-read currents flowing through the memory cell are above determined thresholds, and programming voltage pulses are applied to the memory cell while the latter is not in the programmed state. Application in particular to the programming of Flash memory cells.