Abstract:
The present invention concerns an image sensor having a plurality of pixels each including a photosensor, a first node having a first capacitance connected to the photosensor, a second node having a second capacitance and selectively connected to the photosensor, and reading circuitry operable to read independently a first voltage value stored at the first node and a second voltage value stored at the second node.
Abstract:
A lens unit includes a lens barrel for receiving at least one lens and a motor arranged to displace the lens barrel between various positions. Displacement of the lens barrel is proportional to an electrical signal applied to the motor. A first conductor is fixed to the lens barrel and is arranged to make electrical contact with a second conductor when the lens barrel is at an initial position. A processor is arranged to detect a change in the electrical contact, to determine an electrical signal at the time of the change and to generate an electrical signal corresponding to the desired displacement.
Abstract:
The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.
Abstract:
The disclosure relates to an integrated circuit comprising at least one photosensitive cell. The cell includes a photosensitive element, an input face associated with the said photosensitive element, an optical filter situated in at least one optical path leading to the photosensitive element and an interconnection part situated between the photosensitive element and the input face. The optical filter is disposed between the photosensitive element and the surface of the interconnection part closest to the input face. In particular, the optical filter can be disposed within the interconnection part. The disclosure also proposes that the filter be formed using a glass comprising cerium sulphide or at least one metal oxide.
Abstract:
The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.
Abstract:
A light sensing cell comprising output means (T1, T2) for generating an output voltage depending on the voltage of a sensing node (2), the voltage of the sensing node varying as a function of a received light; a reset transistor (T3) operable to force the voltage of the sensing node (2) to a reset voltage; a feedback loop comprising an operational amplifier (A1) operable to add through a capacitive voltage divider (C3, C4) a correction voltage to the voltage of the sensing node (2), said correction voltage depending on the output voltage; and preset means (T5) for, during the operation of the reset transistor (T3) and until the amplifier (A1) is operated, setting the input of the capacitive voltage divider (C3, C4) to a predetermined voltage (Vinit).
Abstract:
The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units. The object of creating an optical sensor permitting operation within a short exposure time is achieved by the fact that each pixel unit has integrator median (7, 8; 11, 12; 15, 16) and at least two parallel storage device (21, 22, 23), such that at least two measured values, each assigned to different spectral ranges of the incident radiation, can be detected and stored during the measurement period and then can be read out together to form the relevant color information for the pixel element.
Abstract:
A method of controlling a moving part of a voice coil motor to move from an first position to a second position, wherein the position of the moving part is controlled by the level of an electrical signal applied to a coil of the voice coil motor, a first level of the electrical signal corresponding to the first position, and a second level of the electrical signal corresponding to the second position, the method including: at a first time, changing the electrical signal from the first level to an intermediate level, the intermediate level being chosen such that a peak overshoot of the moving part corresponds to the second position; and at a second time calculated to correspond to a delay of half an oscillation period of the moving part after the first time, changing the electrical signal to the second level.
Abstract:
A lens unit including a lens barrel for receiving at least one lens, a motor arranged to displace the lens barrel between an initial position and a maximum displacement, wherein the displacement of a lens barrel is proportional to the level of an electrical signal applied to the motor when the electrical signal is between first and second levels, the first level corresponding to a level for starting movement of the lens barrel from the initial position and the second level corresponding to a level for bringing the lens barrel to the maximum displacement; a first conductor fixed to the lens barrel and arranged to make electrical contact with a second conductor when said lens barrel is at one of said initial position and said maximum displacement; and a processor arranged to detect a change in the contact situation between the first and second conductive surfaces, to determine one of said first and second levels based on level of the electrical signal at the time of the change and to generate, based on said determined level, a level of said electrical signal for a desired displacement.
Abstract:
The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electronics, peripheral electronics and system electronics, for the pixel-wise conversion of electromagnetic radiation into an intensity-dependent photocurrent, the pixels being connected to contacts of the underlying pixel electronics of the ASIC switching circuit. The method enables conventionally produced ASIC switching circuits to be used without impairing the topography of the photoactive sensor surface. The CMOS passivation layer in the photoactive region and then the upper CMOS metallization are removed and replaced by a metallic layer which is structured in the pixel raster, for the formation of back electrodes. The photo diode matrix is then applied and structured, said photo diode matrix being embodied as a pixel matrix, on which a passivating protective layer and/or a color filter layer having a passivating action can be applied.