公开(公告)号：US5847408A

公开(公告)日：1998-12-08

申请号：US824016

申请日：1997-03-21

Applicant: Seigo Kanemaru ,  Junji Itoh

Inventor： Seigo Kanemaru ,  Junji Itoh

IPC: H01J3/02 ,  H01L29/06

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes. An extraction voltage is applied to one of these electrodes closest to the emitter, another electrode is connected to an X selection line and another to a Y selection line, thereby controlling emission current.

Abstract translation: 具有简单结构的场致发射器件可实现场发射电流的稳定和控制。 发射电流由多个控制电压系统控制。 通过处理p型半导体衬底制造具有尖锐尖端的发射极，并且在与发射极横向分离的位置处在p型半导体衬底表面上设置n型源极区。 具有面向发射极顶点的孔的电极层设置在绝缘层上，电极层延伸到n型源极区域的上方。 电压施加到电极层，以将提取器场施加到发射极的顶点，并在p型半导体衬底的发射极表面和表面处诱导反转层。 电极层被分成多个电极。 将提取电压施加到最靠近发射极的这些电极之一，另一个电极连接到X选择线，而另一个电极连接到Y选择线，从而控制发射电流。

公开(公告)号：US5844250A

公开(公告)日：1998-12-01

申请号：US483853

申请日：1995-06-07

Applicant: Shigeo Itoh ,  Isao Yamada

Inventor： Shigeo Itoh ,  Isao Yamada

IPC: H01J9/02 ,  H01L29/12 ,  H01J1/14 ,  H01J1/48 ,  H01J9/12

CPC classification number: H01J9/025 ,  H01J2201/319 ,  H01J2209/015 ,  H01J2237/0812 ,  H01J2237/31732

Abstract: A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.

Abstract translation: 提供一种制造场致发射元件的方法，该场致发射元件包括基片，以及各自布置在基片上的发射极和栅极。 发射极在其至少顶端形成电子放电部，该电子放电部由金属或半导体形成为单晶结构，或者通过沉积在至少沿垂直于衬底的方向优先取向的多晶结构。

公开(公告)号：US5838103A

公开(公告)日：1998-11-17

申请号：US865179

申请日：1997-05-29

Applicant: Nam-sin Park

Inventor： Nam-sin Park

IPC: H01J17/48 ,  H01J3/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission display and a method therefor, which can substantially improve uniformity of electrons emitted from numerous micro-tips formed to be applied to a flat panel display, by etching the edges of cathodes which are shaped into stripes and forming resistance portions in the etched areas, thereby improving an excessive etching and roughness made in etching a hole in an area for forming a micro-tip. Thus, the display is free of the decrease in tip-adhesion, so that the process efficiency can be increased up to 90% and the uniformity difference between the electrons emitted from a plurality of micro-tips can be maintained at .+-.5% in the edge and center of the cathode.

Abstract translation: 一种场致发射显示器及其方法，其通过蚀刻形成条纹的阴极的边缘并在蚀刻后的电阻部分中形成电阻部分，可以显着改善由形成为施加到平板显示器的多个微型尖端发射的电子的均匀性 从而改善在用于形成微尖端的区域中蚀刻孔中的过度蚀刻和粗糙度。 因此，显示器没有尖端附着力的降低，使得工艺效率可以提高高达90％，并且从多个微尖端发射的电子之间的均匀性差可以保持在+/- 5％ 在阴极的边缘和中心。

公开(公告)号：US5828163A

公开(公告)日：1998-10-27

申请号：US781289

申请日：1997-01-13

Applicant: Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

Inventor： Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.

Abstract translation: 场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。 在绝缘基板上沉积宽的列导体。 绝缘体放置在列导体上。 高电阻层被放置在绝缘体上并与柱导体物理隔离。 高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。 一组微尖端电子发射体放置在高电阻层上。 低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。 一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。 一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。 阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。

公开(公告)号：US5786659A

公开(公告)日：1998-07-28

申请号：US350027

申请日：1994-11-29

Applicant: Toshinori Takagi ,  Masateru Taniguchi ,  Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

Inventor： Toshinori Takagi ,  Masateru Taniguchi ,  Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.

Abstract translation: 能够使阴极配线和各个发射极锥体之间的电阻值设定在基本相同的水平并增加发射锥体的封装密度的场致发射型电子源。 电子源包括布置在绝缘基板上的条状阴极布线。 阴极布线各自形成有多个窗口，使得与阴极布线分离地形成彼此电阻值不同的多个岛状阴极导体和电阻层。 然后，在其上形成电阻层，绝缘层和栅电极。 栅极电极和绝缘层以其中布置发射极锥体的共同方式形成有孔，导致来自每个组单元的发射极锥体的电子发射均匀。

公开(公告)号：US5770919A

公开(公告)日：1998-06-23

申请号：US775843

申请日：1996-12-31

Applicant: Kevin Tjaden ,  David A. Cathey, Jr. ,  John K. Lee

Inventor： Kevin Tjaden ,  David A. Cathey, Jr. ,  John K. Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.

Abstract translation: 公开了一种包括基板，形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件（“FED”）的微点组件。 微点组件还包括与特定FED元件相关联的电阻结构，其将电流限制到最大水平并且最小化对器件的剩余元件的影响。 电阻率的任何变化是均匀分布的，因为相同的过程一贯地应用于多个元件位置。

公开(公告)号：US5767619A

公开(公告)日：1998-06-16

申请号：US573096

申请日：1995-12-15

Applicant: Chun-Hui Tsai ,  Ching-Yuan Lin ,  Tzung Zu Yang

Inventor： Chun-Hui Tsai ,  Ching-Yuan Lin ,  Tzung Zu Yang

IPC: H01J3/02 ,  H01J31/12 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J31/127 ,  H01J2201/319

Abstract: A cold cathode field emission display is described. A key feature of its design is that each group of microtips that constitute a pixel is located on the same equipotential surface and a reliable ballast resistor is interposed between the equipotential surface and the cathode line which powers the pixel. An efficient method for manufacturing the display is also described.

Abstract translation: 描述冷阴极场致发射显示器。 其设计的一个关键特征是构成像素的每组微尖头位于相同的等电位面上，并且在等电位表面和为像素供电的阴极线之间插入可靠的镇流电阻。 还描述了用于制造显示器的有效方法。

公开(公告)号：US5757138A

公开(公告)日：1998-05-26

申请号：US641668

申请日：1996-05-01

Applicant: Chun-hui Tsai

Inventor： Chun-hui Tsai

IPC: H01J3/02 ,  G09G3/10

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A design for a field emission device comprising a cold cathode emitter, a control gate and a focus gate, is discussed. The focus gate is connected to the emitter voltage source and a ballast resistor is inserted between this connection point and the emitter. This ensures that the focus gate will always be more negative than the emitter, this difference in potential increasing with increasing emitter current. This leads to a linear current-voltage characteristic for the device and also makes for a tighter electron beam than that provided by designs of the prior art. A physical realization of the design is described along with a cost effective method for manufacturing said physical realization.

Abstract translation: 讨论了包括冷阴极发射器，控制栅极和聚焦栅极的场致发射器件的设计。 聚焦栅极连接到发射极电压源，并在该连接点和发射极之间插入镇流电阻。 这确保了聚焦栅极总是比发射极更负，这种差异随着发射极电流的增加而增加。 这导致器件的线性电流 - 电压特性，并且还使得比现有技术的设计提供的电子束更紧的电子束。 描述了设计的物理实现以及用于制造所述物理实现的成本有效的方法。

公开(公告)号：US5698933A

公开(公告)日：1997-12-16

申请号：US656727

申请日：1996-06-03

Applicant: Robert T. Smith

Inventor： Robert T. Smith

IPC: H01J3/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A field emission device (10) utilizes a resistive layer (13) between an extraction grid (14) and a conductive layer (12) to form a resistor (23). The resistor controls the amount of current flowing through an emission tip (16) of the field emission device (10).

Abstract translation: 场发射器件（10）利用提取栅极（14）和导电层（12）之间的电阻层（13）形成电阻器（23）。 电阻器控制流过场致发射器件（10）的发射尖端（16）的电流量。

公开(公告)号：US5666024A

公开(公告)日：1997-09-09

申请号：US518909

申请日：1995-08-24

Applicant: Kenneth G. Vickers

Inventor： Kenneth G. Vickers

IPC: H01J1/304 ,  H01J1/62 ,  H01J1/16 ,  H01J1/53 ,  H01J63/04

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: An electron emitter plate (110) for an FED image display has an extraction (gate) electrode (122, 222) spaced by a dielectric insulating layer (25) from a cathode electrode including a conductive mesh (118, 218). Circular arrays (112) of microtips (14) are located concentrically within mesh spacings (116, 216) on a resistive layer (15), within apertures (26) formed on ring-shaped pads (127, 227) patterned in an extraction electrode (122). Mesh spacings (116) and pads (127) are circular. Mesh spacings (226) and pads (227) are hexagonal. For reduced capacitance, dielectric material (25) is etched from cores (144) of rings (127, 227) and from toroidal regions (148) below rings (127, 227). Mesh spacings (116, 216) are hexagonal close-packed and mesh material (118, 218) is removed from portions (142) of cathode electrode. Y-shaped bridging strips (129') have nodes (146) located over removed cathode electrode portions (142).

Abstract translation: 用于FED图像显示器的电子发射器板（110）具有从包括导电网（118,218）的阴极电极与电介质绝缘层（25）间隔开的提取（栅极）电极（122,222）。 微尖端（14）的圆形阵列（112）同心地位于电阻层（15）上的网格间隔（116,216）内，形成在图案化在引出电极中的环形焊盘（127,227）上的孔（26）内 （122）。 网状间隔（116）和垫（127）是圆形的。 网状间隔（226）和垫（227）是六边形。 对于减小的电容，从环（127,227）的芯（144）和环（127,227）下方的环形区（148）蚀刻电介质材料（25）。 网状间隔（116,216）是六边形紧密堆积的，并且从阴极电极的部分（142）去除网状材料（118,218）。 Y形桥接条（129'）具有位于去除的阴极电极部分（142）之上的节点（146）。