公开(公告)号：US20050224458A1

公开(公告)日：2005-10-13

申请号：US10813390

申请日：2004-03-31

申请人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

发明人： Marcel Gaudet ,  Aelan Mosden ,  Robert Soave

IPC分类号： B08B6/00 ,  B08B7/00 ,  C23C16/44

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32082 ,  H01J2237/022

摘要： A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

摘要翻译： 提供了用于在干洗过程中从等离子体处理系统中去除室残留物的系统和方法。 所述干洗方法包括在等离子体处理系统的处理室中引入包括含有碳和氧的气体的工艺气体，从所述工艺气体产生等离子体，在干式清洗过程中将所述室残留物暴露于等离子体以形成挥发性 反应产物，并从处理室中排出反应产物。 可以监测等离子体处理系统以确定处理系统的状态，并且基于来自监视的状态，该方法包括继续曝光和监视，或停止干洗过程。 干洗过程可以是无晶圆干洗（WDC）工艺，或者在干洗过程中，基板可能存在于处理室中的基板支架上。

公开(公告)号：US08664102B2

公开(公告)日：2014-03-04

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US20110241128A1

公开(公告)日：2011-10-06

申请号：US12751926

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28247 ,  H01L29/6656

摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

摘要翻译： 描述了具有多层侧壁间隔件和形成方法的半导体器件。 在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。 该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。 然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

公开(公告)号：US07959970B2

公开(公告)日：2011-06-14

申请号：US10813390

申请日：2004-03-31

申请人： Marcel Gaudet ,  Aelan Mosden ,  Robert J. Soave

发明人： Marcel Gaudet ,  Aelan Mosden ,  Robert J. Soave

IPC分类号： C23C16/00

CPC分类号： H01J37/32862 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/32082 ,  H01J2237/022

摘要： A system and method is provided for removing chamber residues from a plasma processing system in a dry cleaning process. The dry cleaning process includes introducing a process gas including a gas containing carbon and oxygen in a process chamber of the plasma processing system, generating a plasma from the process gas, exposing the chamber residue to the plasma in a dry cleaning process to form a volatile reaction product, and exhausting the reaction product from the process chamber. The plasma processing system may be monitored to determine status of the processing system, and based upon the status from the monitoring, the method includes either continuing the exposing and monitoring, or stopping the dry cleaning process. The dry cleaning process can be a waferless dry cleaning (WDC) process, or a substrate may present on the substrate holder in the process chamber during the dry cleaning process.

摘要翻译： 提供了用于在干洗过程中从等离子体处理系统中去除室残留物的系统和方法。 所述干洗方法包括在等离子体处理系统的处理室中引入包括含有碳和氧的气体的工艺气体，从所述工艺气体产生等离子体，在干式清洗过程中将所述室残留物暴露于等离子体以形成挥发性 反应产物，并从处理室中排出反应产物。 可以监测等离子体处理系统以确定处理系统的状态，并且基于来自监视的状态，该方法包括继续曝光和监视，或停止干洗过程。 干洗过程可以是无晶圆干洗（WDC）工艺，或者在干洗过程中，基板可能存在于处理室中的基板支架上。

公开(公告)号：US20070238301A1

公开(公告)日：2007-10-11

申请号：US11390470

申请日：2006-03-28

申请人： Stephen Cabral ,  Aelan Mosden ,  Young Lee

发明人： Stephen Cabral ,  Aelan Mosden ,  Young Lee

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/02049 ,  H01L21/67109

摘要： A batch processing system and method for chemical oxide removal (COR) is described. The batch processing system is configured to provide chemical treatment of a plurality of substrates, wherein each substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the batch processing system is configured to provide thermal treatment of a plurality of substrates, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

摘要翻译： 描述了用于化学氧化物去除（COR）的批处理系统和方法。 批处理系统被配置为提供多个基板的化学处理，其中每个基板在包括表面温度和气体压力的受控条件下暴露于气体化学物质，例如HF / NH 3。 此外，批处理系统被配置为提供多个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

公开(公告)号：US07097779B2

公开(公告)日：2006-08-29

申请号：US10883784

申请日：2004-07-06

申请人： Aelan Mosden ,  Asao Yamashita

发明人： Aelan Mosden ,  Asao Yamashita

IPC分类号： B44C1/22 ,  H01L21/00

CPC分类号： H01L21/02167 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3148 ,  H01L21/31633

摘要： A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.

摘要翻译： 一种用于化学处理基底上的TERA层的处理系统和方法。 衬底的化学处理化学改变衬底上的暴露表面。 在一个实施例中，用于处理TERA层的系统包括用于在衬底上沉积TERA层的等离子体增强化学气相沉积（PECVD）系统，用于在TERA层中创建特征的蚀刻系统，以及用于减少 TERA图层中的特征尺寸。