公开(公告)号：US07541630B2

公开(公告)日：2009-06-02

申请号：US11613224

申请日：2006-12-20

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14687 ,  H01L27/14621

Abstract: A CMOS image sensor and method of manufacturing the same are provided. In one embodiment, the CMOS image sensor includes: an interlayer dielectric layer formed on a semiconductor substrate including a plurality of photodiodes and transistors; a plurality of color filter isolation layers formed on the interlayer dielectric layer; a color filter layer comprising a first color filter, a second color filter, and a third color filter formed on the interlayer dielectric layer, wherein a portion of the first color filter and a portion of the second color filter are formed on one of the plurality of color filter isolation layers, and wherein a portion of the second color filter and a portion of the third color filter are formed on another of the plurality of color filter isolation layers; and microlenses formed on the color filter layer.

Abstract translation: 提供CMOS图像传感器及其制造方法。 在一个实施例中，CMOS图像传感器包括：形成在包括多个光电二极管和晶体管的半导体衬底上的层间介质层; 形成在所述层间绝缘层上的多个滤色器隔离层; 滤色器层，包括形成在所述层间电介质层上的第一滤色器，第二滤色器和第三滤色器，其中所述第一滤色器的一部分和所述第二滤色器的一部分形成在所述多个 的滤色器隔离层，并且其中所述第二滤色器的一部分和所述第三滤色器的一部分形成在所述多个滤色器隔离层中的另一个上; 和形成在滤色器层上的微透镜。

公开(公告)号：US07534643B2

公开(公告)日：2009-05-19

申请号：US11448496

申请日：2006-06-07

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/66659

Abstract: A method for fabricating a CMOS image sensor includes: forming a gate electrode on a pixel region of the semiconductor substrate and, at the same time, forming a polysilicon pattern on a middle resistor region; forming a first lightly doped n-type diffusion region on the photodiode region; forming a second lightly doped n-type diffusion region on the transistor region; consecutively forming first and second insulating layers on the entire surface of the semiconductor substrate; removing a predetermined portion of the second insulation layer on the transistor region and the middle resistor region; forming a third insulation layer on the entire surface of the semiconductor substrate; forming sidewalls of the first insulating layer and the third insulating layer on the gate electrode and the polysilicon pattern by performing an etch-back process; and heavily doping n-type impurities in the transistor region and the polysilicon pattern.

Abstract translation: 一种制造CMOS图像传感器的方法，包括：在半导体衬底的像素区域上形成栅极电极，同时在中间电阻器区域上形成多晶硅图案; 在所述光电二极管区域上形成第一轻掺杂n型扩散区; 在所述晶体管区上形成第二轻掺杂n型扩散区; 在半导体衬底的整个表面上连续形成第一和第二绝缘层; 去除晶体管区域和中间电阻器区域上的第二绝缘层的预定部分; 在所述半导体衬底的整个表面上形成第三绝缘层; 通过执行回蚀工艺在栅电极和多晶硅图案上形成第一绝缘层和第三绝缘层的侧壁; 并在晶体管区域和多晶硅图案中重掺杂n型杂质。

公开(公告)号：US07507626B2

公开(公告)日：2009-03-24

申请号：US11647021

申请日：2006-12-27

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/336

CPC classification number: H01L29/42324 ,  H01L21/28273

Abstract: Disclosed is a floating gate of a flash memory device, wherein a tunneling oxide layer is formed on a semiconductor substrate, and a floating gate is formed in the shape of a lens having a convex top surface.

Abstract translation: 公开了一种闪存器件的浮动栅极，其中在半导体衬底上形成隧道氧化物层，并且浮栅形成为具有凸顶表面的透镜的形状。

公开(公告)号：US07494863B2

公开(公告)日：2009-02-24

申请号：US11485361

申请日：2006-07-13

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/8234 ,  H01L21/8244

CPC classification number: H01L28/40 ,  H01L21/3212 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632

Abstract: Disclosed is a method for manufacturing a capacitor in a semiconductor device. A method consistent with the present invention includes forming a lower electrode on a semiconductor substrate; forming a first interlevel dielectric layer on an entire surface of the semiconductor substrate, covering the lower electrode; selectively removing the first interlevel dielectric layer to form an opening exposing a surface of the lower electrode; sequentially forming a dielectric layer and a conductive layer over the entire surface of the semiconductor substrate including the opening; planarizing the conductive layer to form an upper electrode in the opening; and forming a second interlevel dielectric layer over the entire surface of the semiconductor substrate including the upper electrode.

Abstract translation: 公开了一种在半导体器件中制造电容器的方法。 符合本发明的方法包括在半导体衬底上形成下电极; 在所述半导体衬底的整个表面上形成第一层间电介质层，覆盖所述下电极; 选择性地去除所述第一层间电介质层以形成暴露所述下电极的表面的开口; 在包括该开口的半导体衬底的整个表面上依次形成介电层和导电层; 平面化导电层以在开口中形成上电极; 以及在包括上电极的半导体衬底的整个表面上形成第二层间电介质层。

公开(公告)号：US20080224188A1

公开(公告)日：2008-09-18

申请号：US12046114

申请日：2008-03-11

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L27/16 ,  H01L23/38 ,  H01L27/14643 ,  H01L35/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus that can effectively operate in high temperatures including a CMOS image sensor, a thermoelectric semiconductor formed under the CMOS image sensor for selectively cooling the image sensor and a heat sink formed under the thermoelectric semiconductor.

Abstract translation: 可以在高温下有效地操作的装置，包括CMOS图像传感器，形成在CMOS图像传感器下方的用于选择性地冷却图像传感器的热电半导体和形成在热电半导体下的散热器。

公开(公告)号：US20080156970A1

公开(公告)日：2008-07-03

申请号：US12001652

申请日：2007-12-11

Applicant: Chang Hun Han ,  Hea Soo Chung

Inventor： Chang Hun Han ,  Hea Soo Chung

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

Abstract: The present invention provides an image sensor, and methods of manufacturing the same, that includes a color filter layer on a semiconductor substrate, and a microlens array on the color filter layer, in which the microlens includes a transparent conductive layer.

Abstract translation: 本发明提供了一种图像传感器及其制造方法，其包括半导体衬底上的滤色器层和滤色器层上的微透镜阵列，其中微透镜包括透明导电层。

公开(公告)号：US20080042228A1

公开(公告)日：2008-02-21

申请号：US11839236

申请日：2007-08-15

Applicant: CHANG HUN HAN

Inventor： CHANG HUN HAN

IPC: H01L31/0232 ,  H01L21/02

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623

Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括设置在有源区域中的多个像素和设置在周边区域中的虚拟像素。 层间绝缘层在有源区具有第一厚度，在周边区具有比第一厚度薄的第二厚度。 彩色滤光片设置在有源区域中，并且遮光构件设置在周边区域中。 滤色器和遮光构件之间基本上没有差别。

公开(公告)号：US07217967B2

公开(公告)日：2007-05-15

申请号：US10746980

申请日：2003-12-23

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L27/148

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.

公开(公告)号：US07101759B2

公开(公告)日：2006-09-05

申请号：US10750252

申请日：2003-12-31

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/8247

CPC classification number: H01L27/11521 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/115

Abstract: Methods of fabricating nonvolatile memory devices are disclosed. A disclosed method comprises forming a trench isolation layer on a substrate; forming an oxide layer and a polysilicon layer; forming a sacrificial layer on the polysilicon layer; forming a photoresist pattern on the sacrificial layer; performing an etching process using the photoresist pattern as a mask and, at the same time, attaching polymers on sidewalls of the etched sacrificial layer to form polymer layers, the polymers being generated from the etching of the sacrificial layer; and forming a floating gate and a tunnel oxide by removing part of the polysilicon layer and the oxide layer using the polymer layers and the photoresist pattern as a mask. The disclosed method can increase the width of a floating gate by using polymer layers in fabricating a two-bit type cell, thereby ensuring a higher coupling ratio compared to the coupling ratio of a conventional two-bit type cell.

Abstract translation: 公开了制造非易失性存储器件的方法。 所公开的方法包括在衬底上形成沟槽隔离层; 形成氧化物层和多晶硅层; 在所述多晶硅层上形成牺牲层; 在牺牲层上形成光致抗蚀剂图案; 执行使用光致抗蚀剂图案作为掩模的蚀刻工艺，并且同时将聚合物附着在蚀刻的牺牲层的侧壁上以形成聚合物层，该聚合物是从牺牲层的蚀刻产生的; 并且通过使用聚合物层和光致抗蚀剂图案作为掩模，通过去除多晶硅层和氧化物层的一部分来形成浮置栅极和隧道氧化物。 所公开的方法可以通过在制造两位型电池中使用聚合物层来增加浮动栅极的宽度，由此确保与传统的两位型电池的耦合比相比更高的耦合比。

公开(公告)号：US20060138484A1

公开(公告)日：2006-06-29

申请号：US11319067

申请日：2005-12-28

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/113 ,  H01L31/00 ,  H01L27/10

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.

Abstract translation: CMOS图像传感器包括具有有源区和器件隔离区的第一导电类型半导体衬底，形成在半导体衬底的器件隔离区中的器件隔离膜，形成在半导体的有源区中的第二导电型扩散区 衬底和形成在器件隔离膜附近的离子注入防止层，包括器件隔离膜和第二导电类型扩散区之间的边界部分。