公开(公告)号：US08385115B2

公开(公告)日：2013-02-26

申请号：US12583811

申请日：2009-08-26

Applicant: Chang Hyun Lee ,  Dong Dae Kim ,  Byung In Choi

Inventor： Chang Hyun Lee ,  Dong Dae Kim ,  Byung In Choi

IPC: G11C11/34

CPC classification number: G11C11/5628 ,  G11C16/0483

Abstract: Embodiments are directed to a method of programming a semiconductor memory device, the memory device including: a plurality of memory cell transistors arranged in a plurality of transistor strings; a plurality of word lines, each word line connected to a corresponding memory cell transistor of each of the transistor strings; and a plurality of bit lines, each bit line connected to at least one of the transistor strings, the method comprising: applying a first voltage, and then applying a programming voltage to a selected word line corresponding to the selected memory cell transistor; and in advance of applying the first voltage to the selected word line, applying a second voltage to at least one neighboring word line that neighbors the selected word line, the neighboring word line connected to a neighboring, unselected memory cell transistor of the selected transistor string, to ensure precharging of a channel region of another, unselected transistor string between a first, unselected transistor of the unselected transistor string connected to the neighboring word line and a second, unselected transistor of the unselected transistor string connected to the selected word line, the first, unselected transistor neighboring the second, unselected transistor in the unselected transistor string.

Abstract translation: 实施例涉及一种编程半导体存储器件的方法，该存储器件包括：以多个晶体管串排列的多个存储单元晶体管; 多个字线，每个字线连接到每个晶体管串的对应的存储单元晶体管; 和多个位线，每个位线连接到晶体管串中的至少一个，所述方法包括：施加第一电压，然后将编程电压施加到对应于所选择的存储单元晶体管的选定字线; 并且在对所选择的字线施加第一电压之前，向邻近所选字线的至少一个相邻字线施加第二电压，连接到所选晶体管串的相邻未选择的存储单元晶体管的相邻字线 以确保连接到相邻字线的未选择晶体管串的第一未选择晶体管与连接到所选字线的未选择晶体管串的第二未选择晶体管之间的另一未选择晶体管串的通道区域的预充电， 首先，与未选择的晶体管串中的第二未选择晶体管相邻的未选择的晶体管。

公开(公告)号：US20120288007A1

公开(公告)日：2012-11-15

申请号：US13522408

申请日：2011-01-14

Applicant: Chang-Hyun Lee ,  Tammy Lee ,  Jianle Chen ,  Dae-Sung Cho ,  Woo-jin Han ,  Il-koo Kim

Inventor： Chang-Hyun Lee ,  Tammy Lee ,  Jianle Chen ,  Dae-Sung Cho ,  Woo-jin Han ,  Il-koo Kim

IPC: H04N7/32

CPC classification number: H04N19/103 ,  H04N19/119 ,  H04N19/176 ,  H04N19/46 ,  H04N19/57 ,  H04N19/61

Abstract: A video encoding method and apparatus and a video decoding method and apparatus are provided. The video encoding method includes: prediction encoding in units of a coding unit as a data unit for encoding a picture, by using partitions determined based on a first partition mode and a partition level, so as to select a partition for outputting an encoding result from among the determined partitions; and encoding and outputting partition information representing a first partition mode and a partition level of the selected partition. The first partition mode represents a shape and directionality of a partition as a data unit for performing the prediction encoding on the coding unit, and the partition level represents a degree to which the coding unit is split into partitions for detailed motion prediction.

Abstract translation: 提供了视频编码方法和装置以及视频解码方法和装置。 视频编码方法包括：通过使用基于第一分区模式和分区级别确定的分区，以编码单位为单位的预测编码，作为用于编码图像的数据单元，以便选择用于输出编码结果的分区 在确定的分区中; 以及编码并输出表示所选分区的第一分区模式和分区级别的分区信息。 第一分区模式表示作为用于在编码单元上执行预测编码的数据单元的分区的形状和方向性，并且分区级别表示编码单元被分割成用于详细运动预测的分区的程度。

公开(公告)号：US08237199B2

公开(公告)日：2012-08-07

申请号：US12850677

申请日：2010-08-05

Applicant: Jong-Sun Sel ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Chang-Hyun Lee ,  Jang-Sik Lee ,  Vie-Na Kim

Inventor： Jong-Sun Sel ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Chang-Hyun Lee ,  Jang-Sik Lee ,  Vie-Na Kim

IPC: H01L29/94

CPC classification number: G11C8/14 ,  G11C16/0483 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11568

Abstract: A cell array includes a semiconductor substrate including an active region comprising a first region, a second region, and a transition region, the second region being separated from the first region by the transition region, wherein a top surface of the second region is at a different level than a top surface of the first region. The cell array also includes a plurality of word lines crossing over the first region. The cell array also includes a selection line crossing over the active region, wherein at least a portion of the selection line is located over the transition region.

Abstract translation: 电池阵列包括半导体衬底，其包括包括第一区域，第二区域和过渡区域的有源区域，第二区域与第一区域分离过渡区域，其中第二区域的顶表面处于 与第一区域的顶表面不同的水平。 单元阵列还包括跨越第一区域的多个字线。 单元阵列还包括在有源区上交叉的选择线，其中选择线的至少一部分位于过渡区上方。

公开(公告)号：US20120168852A1

公开(公告)日：2012-07-05

申请号：US13357350

申请日：2012-01-24

Applicant: Chang-Hyun Lee ,  Jung-Dal Choi

Inventor： Chang-Hyun Lee ,  Jung-Dal Choi

IPC: H01L29/792 ,  H01L21/336 ,  H01L29/76

CPC classification number: H01L27/1052 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11524

Abstract: A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.

Abstract translation: 非易失性存储器件包括串选择晶体管，多个存储单元晶体管和与串选择晶体管和多个存储单元晶体管串联电连接的接地选择晶体管。 在存储单元晶体管的沟道和源极/漏极区的边界处形成第一杂质层。 相对于存储单元晶体管的源/漏区，第一杂质层掺杂有相反导电类型的杂质。 第二杂质层形成在串选择晶体管的沟道和漏极区之间的边界处，并且在地选择晶体管的沟道和源极区之间形成。 第二杂质层掺杂有与第一杂质层相同的导电类型杂质，并且具有比第一杂质层更高的杂质浓度。

公开(公告)号：US20120139027A1

公开(公告)日：2012-06-07

申请号：US13238368

申请日：2011-09-21

Applicant: Byoung-keun Son ,  Chang-hyun Lee

Inventor： Byoung-keun Son ,  Chang-hyun Lee

IPC: H01L29/78 ,  H01L29/772

CPC classification number: H01L29/7926 ,  H01L21/2255

Abstract: A vertical structure non-volatile memory device includes a channel region that vertically extends on a substrate. A memory cell string vertically extends on the substrate along a first wall of the channel regions, and includes at least one selection transistor and at least one memory cell. An impurity providing layer is disposed on a second wall of the channel region and includes impurities.

Abstract translation: 垂直结构的非易失性存储器件包括在衬底上垂直延伸的沟道区域。 存储单元串沿着沟道区的第一壁在衬底上垂直延伸，并且包括至少一个选择晶体管和至少一个存储单元。 杂质提供层设置在沟道区的第二壁上并且包括杂质。

公开(公告)号：US08189499B2

公开(公告)日：2012-05-29

申请号：US12107817

申请日：2008-04-23

Applicant: Do-Young Joung ,  Tae-Sung Park ,  Jae-Hoon Kwon ,  Sung-Kee Kim ,  Yong-Gyoo Kim ,  Si-Hai Wang ,  Chang-Hyun Lee

Inventor： Do-Young Joung ,  Tae-Sung Park ,  Jae-Hoon Kwon ,  Sung-Kee Kim ,  Yong-Gyoo Kim ,  Si-Hai Wang ,  Chang-Hyun Lee

IPC: H04B7/00

CPC classification number: H04N21/6131 ,  H04L1/0003 ,  H04L1/0014 ,  H04L1/0015 ,  H04N21/234381 ,  H04N21/23805 ,  H04N21/2383 ,  H04N21/2402 ,  H04N21/26216 ,  H04N21/2662 ,  H04N21/41407 ,  H04N21/6373 ,  H04N21/6379

Abstract: A cross-layer optimization method for controlling a bit rate of a video coder/decoder (codec) in video data transmission for wireless devices such as a wireless broadband (WiBro) system terminal that adapts to changing transmission/reception characteristics and usage. The method typically includes checking, by a sender, radio channel state information of a sender side and a receiver side; determining, by the sender, a transmission bit rate of a video codec by using the radio channel state information of the sender side; and adjusting, by the sender, the transmission bit rate of the video codec by using the radio channel state information of the receiver side when a communication network used by a receiver typically based on the type of a communication network being used by the sender.

Abstract translation: 一种跨层优化方法，用于控制视频编码器/解码器（编解码器）在用于诸如无线宽带（WiBro）系统终端的无线设备的视频数据传输中的比特率，其适应变化的发射/接收特性和使用。 该方法通常包括由发送者检查发送方和接收方的无线电信道状态信息; 由发送方通过使用发送方的无线电信道状态信息来确定视频编解码器的传输比特率; 以及当由接收机使用的通信网络通常基于通信网络的类型由发送方使用时，通过使用接收机侧的无线电信道状态信息，由发送方调整视频编解码器的传输比特率。

公开(公告)号：US20120110957A1

公开(公告)日：2012-05-10

申请号：US13343879

申请日：2012-01-05

Applicant: Chang Hyun LEE ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

Inventor： Chang Hyun LEE ,  Jong Soo Woo ,  Hong Gi Yi ,  Kyeong Soo Kim ,  Ho Taek Yim

IPC: B65B63/08

CPC classification number: A61K9/0056 ,  A61J3/10 ,  A61K9/2095 ,  B30B11/02 ,  B30B11/08 ,  B65B9/042 ,  B65B9/045

Abstract: A method and packaging machine for preparing rapidly disintegrating formulations for oral administration are disclosed. The present invention is characterized in that a powdery mixture including a pharmaceutically active ingredient and a sugar or a sugar alcohol powder is filled into a packaging material and, thereafter, the mixture, filled in the packaging material, is heated. The present invention can simply and economically prepare an oral formulation which undergoes rapid disintegration in the oral cavity and provides for high-quality administration to patients.

Abstract translation: 公开了用于制备用于口服给药的快速崩解制剂的方法和包装机。 本发明的特征在于将包含药物活性成分和糖或糖醇粉末的粉末混合物填充到包装材料中，然后将填充在包装材料中的混合物加热。 本发明可以简单且经济地制备在口腔中快速崩解并提供给患者高质量给药的口服制剂。

公开(公告)号：US08169967B2

公开(公告)日：2012-05-01

申请号：US12050341

申请日：2008-03-18

Applicant: Chang-Hyun Lee ,  Sung-Jea Ko ,  Yun-Je Oh ,  Tae-Sung Park ,  Jeong-Rok Park ,  Jeong-Seok Choi ,  Young-Hun Joo ,  Hye-Soo Kim ,  Kyung-Ho Chae

Inventor： Chang-Hyun Lee ,  Sung-Jea Ko ,  Yun-Je Oh ,  Tae-Sung Park ,  Jeong-Rok Park ,  Jeong-Seok Choi ,  Young-Hun Joo ,  Hye-Soo Kim ,  Kyung-Ho Chae

IPC: H04W4/00 ,  H04W36/00 ,  H04B7/216 ,  H04M11/00

CPC classification number: H04W36/30 ,  H04W36/26

Abstract: A system and method for performing a handover of a mobile station (MS) by considering Quality of Service (QoS) in a broadband mobile communication system. The method can include the steps of: receiving information about one or more neighbor base stations and reception strengths for the neighbor base stations from a Serving Radio Access System (RAS) currently communicating with the MS; extracting a value of a specific field from the received information about the neighbor base stations; combining the extracted value of the specific field with the reception strengths to thereby obtain combined values, and selecting a maximum value among the combined values; and transmitting a handover (handoff) request message to a base station corresponding to the selected maximum value. The system includes an MS that analyzes information about neighbor stations received in a Mobile Neighbor Base-station Advertisement (MOB_NBR_ADV) message to select a target RAS.

Abstract translation: 一种通过考虑宽带移动通信系统中的服务质量（QoS）来执行移动台（MS）的切换的系统和方法。 该方法可以包括以下步骤：从当前与MS通信的服务无线电接入系统（RAS）接收关于一个或多个相邻基站的信息和相邻基​​站的接收强度; 从接收到的关于邻近基站的信息中提取特定字段的值; 将所提取的特定字段的值与接收强度组合，从而获得组合值，并且选择组合值中的最大值; 以及向对应于所选择的最大值的基站发送切换（切换）请求消息。 该系统包括分析在移动邻居基站广播（MOB_NBR_ADV）消息中接收的关于相邻站的信息以选择目标RAS的MS。

公开(公告)号：US08125015B2

公开(公告)日：2012-02-28

申请号：US12984630

申请日：2011-01-05

Applicant: Chang-Hyun Lee ,  Jung-Dal Choi

Inventor： Chang-Hyun Lee ,  Jung-Dal Choi

IPC: H01L29/76

CPC classification number: H01L27/1052 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11524

Abstract: Nonvolatile memory devices and methods of making the same are described. A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. Each of the transistors includes a channel region and source/drain regions. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.

Abstract translation: 描述了非易失性存储器件及其制造方法。 非易失性存储器件包括串选择晶体管，多个存储单元晶体管和与串选择晶体管和多个存储单元晶体管串联电连接的接地选择晶体管。 每个晶体管包括沟道区和源极/漏极区。 在存储单元晶体管的沟道和源极/漏极区的边界处形成第一杂质层。 相对于存储单元晶体管的源/漏区，第一杂质层掺杂有相反导电类型的杂质。 第二杂质层形成在串选择晶体管的沟道和漏极区之间的边界处，并且在地选择晶体管的沟道和源极区之间形成。 第二杂质层掺杂有与第一杂质层相同的导电类型杂质，并且具有比第一杂质层更高的杂质浓度。

公开(公告)号：US08076713B2

公开(公告)日：2011-12-13

申请号：US12422862

申请日：2009-04-13

Applicant: Chang-Hyun Lee ,  Kyu-Charn Park

Inventor： Chang-Hyun Lee ,  Kyu-Charn Park

IPC: H01L21/8247

CPC classification number: H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

Abstract: A non-volatile memory device includes a substrate having a first region and a second region. A first gate electrode is disposed on the first region. A multi-layered charge storage layer is interposed between the first gate electrode and the substrate, the multi-layered charge storage including a tunnel insulation, a trap insulation, and a blocking insulation layer which are sequentially stacked. A second gate electrode is placed on the substrate of the second region, the second gate electrode including a lower gate and an upper gate connected to a region of an upper surface of the lower gate. A gate insulation layer is interposed between the second gate electrode and the substrate. The first gate electrode and the upper gate of the second gate electrode comprise a same material.

Abstract translation: 非易失性存储器件包括具有第一区域和第二区域的衬底。 第一栅电极设置在第一区域上。 在第一栅电极和基板之间插入多层电荷存储层，多层电荷存储包括依次堆叠的隧道绝缘，阱绝缘和阻挡绝缘层。 第二栅极被放置在第二区域的衬底上，第二栅极包括下栅极和连接到下栅极的上表面区域的上栅极。 栅极绝缘层介于第二栅电极和衬底之间。 第二栅电极的第一栅电极和上栅极包括相同的材料。