公开(公告)号：US09577115B2

公开(公告)日：2017-02-21

申请号：US13195347

申请日：2011-08-01

申请人： Byung-Kyu Cho ,  Chang-Hyun Lee ,  Young-Woo Park

发明人： Byung-Kyu Cho ,  Chang-Hyun Lee ,  Young-Woo Park

IPC分类号： H01L21/70 ,  H01L29/788 ,  H01L21/764 ,  H01L27/115 ,  H01L29/423

CPC分类号： H01L29/7881 ,  H01L21/764 ,  H01L27/11521 ,  H01L29/42336

摘要： A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is formed on a substrate and has a recess thereon. The gate structures are spaced apart from each other on the substrate and the isolation layer pattern. The first insulation layer pattern is formed on the substrate and covers the gate structures and an inner wall of the recess. The first insulation layer pattern has a first air gap therein.

摘要翻译： 半导体器件具有隔离层图案，多个栅极结构和第一绝缘层图案。 隔离层图案形成在基板上并且在其上具有凹部。 栅极结构在衬底和隔离层图案上彼此间隔开。 第一绝缘层图案形成在基板上并且覆盖该凹槽的栅极结构和内壁。 第一绝缘层图案中具有第一气隙。

公开(公告)号：US20150221666A1

公开(公告)日：2015-08-06

申请号：US14605529

申请日：2015-01-26

申请人： Chang-Hyun LEE

发明人： Chang-Hyun LEE

IPC分类号： H01L27/115 ,  H01L29/16 ,  H01L29/04

CPC分类号： H01L27/11582 ,  H01L29/04 ,  H01L29/16 ,  H01L29/66833 ,  H01L29/7926

摘要： According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance layer, a plurality of vertical channels on the channel layer, and a plurality of gate lines. The vertical channels extend in a first direction that is perpendicular with respect to a top surface of the channel layer. The gate lines surround outer sidewalls of the vertical channels, and are stacked in the first direction and are spaced apart from each other.

摘要翻译： 根据示例实施例，垂直存储器件包括在下绝缘层上的低电阻层，低电阻层上的沟道层，沟道层上的多个垂直沟道以及多条栅极线。 垂直通道在相对于沟道层的顶表面垂直的第一方向上延伸。 栅极线围绕垂直通道的外侧壁，并且沿第一方向堆叠并且彼此间隔开。

公开(公告)号：US20140269080A1

公开(公告)日：2014-09-18

申请号：US14192544

申请日：2014-02-27

申请人： Chang-Hyun Lee

发明人： Chang-Hyun Lee

IPC分类号： G11C16/10 ,  G11C16/30 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/30 ,  G11C16/3427

摘要： A non-volatile memory device includes a memory cell array and a voltage generator. The memory cell array has a plurality of cell strings in which a plurality of memory cells are connected with each other in series between a string select transistor and a ground select transistor. The voltage generator generates a program voltage, a first pass voltage, and a second pass voltage. A first boost channel voltage applied when programming an outermost memory cell from among the memory cells of each of non-selected cell strings of the cell strings is lower than a second boost channel voltage applied when programming one of remaining memory cells except for the outermost memory cell. The non-volatile memory device prevents programming disturb caused by hot carrier injection.

摘要翻译： 非易失性存储器件包括存储单元阵列和电压发生器。 存储单元阵列具有多个单元串，其中多个存储单元串联连接在串选择晶体管和接地选择晶体管之间。 电压发生器产生编程电压，第一通过电压和第二通过电压。 当从单元串的未选择单元串中的每一个的存储器单元中编程最外层存储单元时施加的第一升压通道电压低于在编程除了最外存储器之外的其余存储单元之一时应用的第二升压通道电压 细胞。 非易失性存储器件防止由热载流子注入引起的编程干扰。

公开(公告)号：US20140203346A1

公开(公告)日：2014-07-24

申请号：US14132425

申请日：2013-12-18

申请人： Chang-Hyun LEE

发明人： Chang-Hyun LEE

IPC分类号： H01L29/49 ,  H01L29/792

CPC分类号： H01L29/7926 ,  H01L27/11565 ,  H01L27/11582 ,  H01L29/4958 ,  H01L29/66833

摘要： Vertical type semiconductor devices including a metal gate and methods of forming the vertical type semiconductor devices are provided. The vertical type semiconductor devices may include a channel pattern. The vertical type semiconductor devices may also include first and second gate patterns sequentially stacked on a sidewall of the channel pattern. The first and second gate pattern may include first and second metal elements, respectively and the second gate pattern may have a resistance lower than a resistance of the first gate pattern.

摘要翻译： 提供了包括金属栅极的垂直型半导体器件和形成垂直型半导体器件的方法。 垂直型半导体器件可以包括沟道图案。 垂直型半导体器件还可以包括顺序地堆叠在沟道图案的侧壁上的第一和第二栅极图案。 第一和第二栅极图案可以分别包括第一和第二金属元件，并且第二栅极图案可以具有比第一栅极图案的电阻低的电阻。

公开(公告)号：US20140106518A1

公开(公告)日：2014-04-17

申请号：US14134457

申请日：2013-12-19

申请人： Chang-Hyun Lee ,  Jung-Dal Choi

发明人： Chang-Hyun Lee ,  Jung-Dal Choi

IPC分类号： H01L27/105

CPC分类号： H01L27/1052 ,  G11C16/0483 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile memory device includes a string selection transistor, a plurality of memory cell transistors, and a ground selection transistor electrically connected in series to the string selection transistor and to the pluralities of memory cell transistors. First impurity layers are formed at boundaries of the channels and the source/drain regions of the memory cell transistors. The first impurity layers are doped with opposite conductivity type impurities relative to the source/drain regions of the memory cell transistors. Second impurity layers are formed at boundaries between a channel and a drain region of the string selection transistor and between a channel and a source region of the ground selection transistor. The second impurity layers are doped with the same conductivity type impurities as the first impurity layers and have a higher impurity concentration than the first impurity layers.

摘要翻译： 非易失性存储器件包括串选择晶体管，多个存储单元晶体管和与串选择晶体管和多个存储单元晶体管串联电连接的接地选择晶体管。 在存储单元晶体管的沟道和源极/漏极区的边界处形成第一杂质层。 相对于存储单元晶体管的源/漏区，第一杂质层掺杂有相反导电类型的杂质。 第二杂质层形成在串选择晶体管的沟道和漏极区之间的边界处，并且在地选择晶体管的沟道和源极区之间形成。 第二杂质层掺杂有与第一杂质层相同的导电类型杂质，并且具有比第一杂质层更高的杂质浓度。

公开(公告)号：US08579321B2

公开(公告)日：2013-11-12

申请号：US13323586

申请日：2011-12-12

申请人： Chang Hyun Lee ,  Jun Yeol Choi ,  Un Koo Lee

发明人： Chang Hyun Lee ,  Jun Yeol Choi ,  Un Koo Lee

IPC分类号： B60R21/214 ,  B60R21/233

CPC分类号： B60R21/231 ,  B60R21/214 ,  B60R21/233 ,  B60R2021/23107

摘要： A relatively small capacity of airbag apparatus can be used by relatively shortening the distance between locations on which a passenger and the airbag apparatus are mounted to more effectively prevent a head and a neck of the passenger from being damaged through a discriminated supporting action of an upper body and a head part of the passenger while reducing a weight and a price of the airbag apparatus and the airbag apparatus can be easily standardized by configuration the airbag apparatus regardless of the shapes of a crash pad and a wind shield glass.

摘要翻译： 通过相对缩短搭乘乘客和安全气囊装置的位置之间的距离，可以使用相对较小容量的气囊装置，以更有效地防止乘客的头部和颈部通过上部的被识别的支撑动作而损坏 身体和乘客的头部，同时减轻气囊装置的重量和价格，并且气囊装置可以通过构造气囊装置而容易地标准化，而与碰撞垫和挡风玻璃的形状无关。

公开(公告)号：US08552488B2

公开(公告)日：2013-10-08

申请号：US13181134

申请日：2011-07-12

申请人： Chang-Hyun Lee ,  Dong-Gun Park

发明人： Chang-Hyun Lee ,  Dong-Gun Park

IPC分类号： H01L29/788

CPC分类号： H01L21/265 ,  B82Y10/00 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/7885 ,  H01L29/792

摘要： Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.

摘要翻译： 在集成电路基板上提供集成电路基板和电荷存储图案的非易失性存储器件。 电荷存储图案具有侧壁，并且在电荷存储图案和集成电路基板之间设置隧道绝缘层。 在电荷存储图案上提供栅极图案。 在电荷存储图案和栅极图案之间设置隔离绝缘层。 电荷存储图案的侧壁包括第一氮掺杂层。 本文还提供了制造非易失性存储器件的相关方法。

公开(公告)号：US20130145896A1

公开(公告)日：2013-06-13

申请号：US13559086

申请日：2012-07-26

申请人： Joon Young Park ,  Chang Hyun Lee

发明人： Joon Young Park ,  Chang Hyun Lee

IPC分类号： G05G1/10

CPC分类号： G05G1/10 ,  F16H59/0278 ,  G05G1/08 ,  G05G1/087 ,  Y10T74/20612 ,  Y10T74/20732 ,  Y10T74/2084

摘要： A control knob for a vehicle has an improved outward appearance by forming a boundary line between two different materials in a portion that is not visible and preventing abrupt differences in color due to light refraction. The control knob is produced by dual injection molding of two different materials, is installed on one end of a shift lever, and functions as a handgrip. The control knob includes an portion of opaque and transparent materials, an overlapping portion opaque and transparent materials, and a coated portion formed of paint applied to portions of the transparent portion that do not overlap with the opaque portion. A boundary surface between the opaque and transparent portions is such that a refractive index of light passing through the transparent portion from the overlapping portion is close to a refractive index of light passing through the transparent portion from the coated portion.

摘要翻译： 用于车辆的控制旋钮通过在不可见的部分中形成两种不同材料之间的边界线并防止由于光折射引起的颜色的突然差异而具有改进的外观。 控制旋钮通过两种不同材料的双注射成型制造，安装在换档杆的一端，并用作手柄。 控制旋钮包括不透明和透明材料的一部分，重叠部分不透明和透明材料，以及由涂料形成的涂覆部分，涂覆到透明部分与不透明部分不重叠的部分。 不透明部分和透明部分之间的边界面使得从重叠部分穿过透明部分的光的折射率接近于从涂覆部分穿过透明部分的光的折射率。

公开(公告)号：US20130092996A1

公开(公告)日：2013-04-18

申请号：US13552877

申请日：2012-07-19

申请人： Chang-Hyun LEE ,  Jung-Dal CHOI ,  Jee-Yeon KANG

发明人： Chang-Hyun LEE ,  Jung-Dal CHOI ,  Jee-Yeon KANG

IPC分类号： H01L27/088

CPC分类号： H01L27/11524

摘要： NAND flash memory device includes a common bit line, a first cell string including a first string selecting transistor having a first gate length, a second string selecting transistor having a second gate length, first cell transistors each having a third gate length and a first ground selecting transistor having a fourth gate length, a second cell string including a third string selecting transistor having the first gate length, a fourth string selecting transistor having the second gate length, second cell transistors each having the third gate length and a second ground selecting transistor having the fourth gate length and a common source line commonly connected to end portions of the first and second ground selecting transistors included in the first and second cell strings. At least one of the first gate length and the second gate length is smaller than the fourth gate length.

摘要翻译： NAND闪存器件包括公共位线，第一单元串，包括具有第一栅极长度的第一串选择晶体管，具有第二栅极长度的第二串选择晶体管，每个具有第三栅极长度的第一单元晶体管和第一栅极 选择具有第四栅极长度的晶体管，第二单元串，包括具有第一栅极长度的第三串选择晶体管，具有第二栅极长度的第四串选择晶体管，每个具有第三栅极长度的第二单元晶体管和第二栅极选择晶体管 具有第四栅极长度和公共源极线，共同连接到包括在第一和第二单元串中的第一和第二接地选择晶体管的端部。 第一栅极长度和第二栅极长度中的至少一个小于第四栅极长度。

公开(公告)号：US08414017B2

公开(公告)日：2013-04-09

申请号：US13165136

申请日：2011-06-21

申请人： Chang Hyun Lee ,  Hyeong Ho Choi ,  Sang Min Jo ,  Un Koo Lee

发明人： Chang Hyun Lee ,  Hyeong Ho Choi ,  Sang Min Jo ,  Un Koo Lee

IPC分类号： B60R21/213 ,  B60R21/231

CPC分类号： B60R21/231 ,  B60R21/213 ,  B60R2021/23386

摘要： A roof airbag apparatus for a vehicle, may include an inflator providing gas pressure, an air tube deploying towards sides of a passenger sitting on a seat when gas may be supplied from the inflator into the air tube, and a front support panel provided on a front end of the air tube to enclose a front portion of the passenger when the air tube may be deployed.

摘要翻译： 一种用于车辆的屋顶安全气囊装置可以包括提供气体压力的充气机，当气体可以从充气器供应到空气管中时朝向坐在座椅上的乘客的侧面展开的空气管，以及设置在座椅上的前支撑面板 当空气管可以展开时，空气管的前端封闭乘客的前部。