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    Single Gate Nonvolatile Memory Cell With Transistor and Capacitor
    13.
    发明申请
    Single Gate Nonvolatile Memory Cell With Transistor and Capacitor 有权
    具有晶体管和电容器的单门非易失性存储单元

    公开(公告)号：US20090256184A1

    公开(公告)日：2009-10-15

    申请号：US12102637

    申请日：2008-04-14

    Applicant: Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

    Inventor： Cheng-Chi Lin ,  Shih-Chin Lien ,  Chin-Pen Yeh ,  Shyi-Yuan Wu

    IPC: H01L27/105 ,  H01L21/8239

    CPC classification number: H01L29/6659 ,  H01L27/11558 ,  H01L29/1083 ,  H01L29/66825 ,  H01L29/7833 ,  H01L29/788

    Abstract: A nonvolatile memory integrated circuit has a semiconductor substrate and a nonvolatile memory device on the semiconductor substrate. The device has a transistor and a capacitor on the semiconductor substrate, and a shared floating gate connecting the gate regions of the transistor and the capacitor. The transistor has at least a doping region defining the source and drain regions, as well as three other doping regions overlapping the source and drain regions. Also disclosed are a nonvolatile memory circuit with multiple such nonvolatile memory device, and methods for making the nonvolatile memory circuit with one or more such nonvolatile memory devices.

    Abstract translation: 非易失性存储器集成电路在半导体衬底上具有半导体衬底和非易失性存储器件。 该器件在半导体衬底上具有晶体管和电容器，以及连接晶体管的栅极区域和电容器的共用浮置栅极。 晶体管至少具有限定源极和漏极区域的掺杂区域以及与源极和漏极区域重叠的三个其它掺杂区域。 还公开了具有多个这种非易失性存储器件的非易失性存储器电路以及用于使非易失性存储器电路具有一个或多个这种非易失性存储器件的方法

    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
    18.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 有权
    半导体结构及其形成方法

    公开(公告)号：US20130221404A1

    公开(公告)日：2013-08-29

    申请号：US13405001

    申请日：2012-02-24

    Applicant: Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

    Inventor： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

    IPC: H01L29/739 ,  H01L21/331

    CPC classification number: H01L21/22 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66674 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

    Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括第一掺杂区，第二掺杂区，掺杂条和顶掺杂区。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域形成在第一掺杂区域中并且具有与第一类型导电性相反的第二类型导电性。 掺杂条形成在第一掺杂区中，具有第二类型的导电性。 顶部掺杂区形成在掺杂条中，具有第一类型的导电性。 顶部掺杂区域具有与第一侧壁相对的第一侧壁和第二侧壁。 掺杂的带延伸超过第一侧壁或第二侧壁。

    Semiconductor memory devices with high gate coupling ratio and methods of manufacturing the same
    19.
    发明授权
    Semiconductor memory devices with high gate coupling ratio and methods of manufacturing the same 有权
    具有高栅极耦合比的半导体存储器件及其制造方法相同

    公开(公告)号：US08487360B2

    公开(公告)日：2013-07-16

    申请号：US12876711

    申请日：2010-09-07

    Applicant: Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu ,  Chin-Pen Yeh

    Inventor： Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu ,  Chin-Pen Yeh

    IPC: H01L27/112

    CPC classification number: H01L27/0629 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/7881

    Abstract: A semiconductor memory device includes a substrate of a first impurity type, a first well region of a second impurity type in the substrate, the second impurity type being different from the first impurity type, a second well region of the first impurity type in the substrate, a patterned first dielectric layer on the substrate extending over the first and second well regions, a patterned first gate structure on the patterned first dielectric layer, a patterned second dielectric layer on the patterned first gate structure, and a patterned second gate structure on the patterned second dielectric layer. The patterned first gate structure may include a first section extending in a first direction and a second section extending in a second direction orthogonal to the first section, wherein the first section and the second section intersects each other in a cross pattern. The patterned second gate structure may include at least one of a first section extending in the first direction over the first section of the patterned first gate structure or a second section extending in the second direction over the second section of the patterned first gate structure.

    Abstract translation: 半导体存储器件包括：第一杂质型衬底，衬底中第二杂质类型的第一阱区，第二杂质型不同于第一杂质型;衬底中第一杂质型第二阱区; 在衬底上的图案化的第一介电层延伸在第一和第二阱区上，图案化的第一介电层上的图案化的第一栅极结构，图案化的第一栅极结构上的图案化的第二介电层，以及图案化的第二栅极结构 图案化的第二介电层。 图案化的第一栅极结构可以包括沿第一方向延伸的第一部分和沿与第一部分正交的第二方向延伸的第二部分，其中第一部分和第二部分以交叉图案彼此相交。 图案化的第二栅极结构可以包括在图案化的第一栅极结构的第一部分上的第一方向上延伸的第一部分或者在图案化的第一栅极结构的第二部分上沿第二方向延伸的第二部分中的至少一个。

    CONTAINER CAP
    20.
    发明申请
    CONTAINER CAP 审中-公开
    集装箱盖

    公开(公告)号：US20120261416A1

    公开(公告)日：2012-10-18

    申请号：US13305769

    申请日：2011-11-29

    Applicant: CHENG-CHI LIN

    Inventor： CHENG-CHI LIN

    IPC: B65D51/18 ,  B65D51/16 ,  B65D53/00 ,  B65D41/04

    CPC classification number: B65D51/24 ,  A45F3/16 ,  B65D43/0229 ,  B65D47/265 ,  B65D2543/00046 ,  B65D2543/00092 ,  B65D2543/00231 ,  B65D2543/0025

    Abstract: A container cap includes: a first cap body formed with at least one first perforation and sealedly connectable to an opening of a container; a second cap body rotatably mounted on the first cap body and formed with at least one second perforation; and a sealing member positioned between the first and second cap bodies and formed with third perforations. The number of the third perforations is equal to the number of the first perforations. The third perforations are aligned with the first perforations of the first cap body respectively. The first and second cap bodies can be relatively rotated to unseal or seal the container for a user to select a desired mode for drinking a beverage contained in the container. For example, a user can directly drink a hot beverage with his/her mouth or insert a straw into the container to drink a cold beverage.

    Abstract translation: 容器盖包括：形成有至少一个第一穿孔并密封地连接到容器的开口的第一帽体; 第二盖体，其可旋转地安装在所述第一盖主体上并形成有至少一个第二穿孔; 以及密封构件，其定位在所述第一和第二盖体之间并且形成有第三穿孔。 第三穿孔的数量等于第一穿孔的数量。 第三穿孔分别与第一盖体的第一穿孔对准。 第一和第二盖体可以相对旋转以开封或密封容器以供使用者选择用于饮用容纳在容器中的饮料的期望模式。 例如，用户可以直接用他/她的嘴喝热饮料或将吸管插入容器中以饮用冷饮料。

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