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43 条记录 (耗时 0.028 秒)

    Technique for removing resist material after high dose implantation in a semiconductor device
    15.
    发明授权
    Technique for removing resist material after high dose implantation in a semiconductor device 有权
    在半导体器件中高剂量注入后去除抗蚀剂材料的技术

    公开(公告)号：US07816273B2

    公开(公告)日：2010-10-19

    申请号：US11782922

    申请日：2007-07-25

    申请人： Christian Krueger ,  Volker Grimm ,  Lutz Eckart

    发明人： Christian Krueger ,  Volker Grimm ,  Lutz Eckart

    IPC分类号： H01L21/425 ,  H01L21/461

    CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/266 ,  H01L21/31133 ,  Y02P80/30

    摘要： Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimize substrate material loss and thus dopant loss in sophisticated semiconductor devices. The first plasma-based etch step may provide under-etched areas of the resist mask, which may then be efficiently removed on the basis of the wet chemical etch process.

    摘要翻译： 可以基于等离子体蚀刻工艺和湿化学蚀刻配方的组合来有效地去除暴露于高剂量注入工艺的抗蚀剂掩模，其中两个蚀刻步骤可以包括高选择性蚀刻化学物质以使衬底材料最小化 复杂半导体器件中的损耗以及因此的掺杂剂损失。 第一等离子体蚀刻步骤可以提供抗蚀剂掩模的欠蚀刻区域，然后可以在湿化学蚀刻工艺的基础上有效地除去。

    System to manufacture custom orthodontic appliances, program product, and related methods
    16.
    发明授权
    System to manufacture custom orthodontic appliances, program product, and related methods 有权
    制造定制矫正器具，程序产品和相关方法的系统

    公开(公告)号：US07751925B2

    公开(公告)日：2010-07-06

    申请号：US11583103

    申请日：2006-10-18

    申请人： Ruedger Rubbert ,  Hans-Christian Krueger

    发明人： Ruedger Rubbert ,  Hans-Christian Krueger

    IPC分类号： G06F17/00 ,  G06F19/00 ,  B21F43/00 ,  A61C3/00 ,  A61C11/00

    CPC分类号： A61C7/00 ,  A61C7/14 ,  A61C7/145 ,  A61C13/0004 ,  B23H9/00 ,  B33Y80/00 ,  Y10T29/49568

    摘要： A system to manufacture orthodontic appliances, program product, and associated methods are provided. An embodiment of a system can include a virtual orthodontic appliance design computer having orthodontic appliance design program product provided to design a virtual dimensional representation of an orthodontic appliance including bracket bodies and bracket pads, and a mold apparatus positioned to form each bracket body and bracket pad. The system also includes a data processing computer including computer-aided manufacturing program product provided to derive electrical discharge device control instructions including a virtual dimensional representation of a bracket slot in the bracket, and an electrical discharge machining apparatus. The electrical discharge machining apparatus can include a controller including control program product to derive a control signal carrying the electrical discharge device control instructions and an electrical discharge device.

    摘要翻译： 提供了制造矫形器具，程序产品和相关方法的系统。 系统的一个实施例可以包括具有矫正器具设计程序产品的虚拟矫正器具设计计算机，用于设计包括支架主体和支架衬垫的正畸器具的虚拟尺寸表示，以及定位成形成每个托架主体和托架垫的模具设备 。 该系统还包括一个数据处理计算机，它包括提供用于导出放电装置控制指令的计算机辅助制造程序产品，该控制指令包括支架中支架槽的虚拟尺寸表示，以及放电加工装置。 放电加工装置可以包括控制器，其包括控制程序产品，用于导出携带放电装置控制指令的控制信号和放电装置。

    Compression ignition internal combustion engine
    18.
    发明授权
    Compression ignition internal combustion engine 有权
    压缩点火内燃机

    公开(公告)号：US07513239B2

    公开(公告)日：2009-04-07

    申请号：US10563334

    申请日：2004-06-25

    申请人： Matthias Blessing ,  Harald Braun ,  Frank Keller ,  Gerhard Koenig ,  Christian Krueger ,  Alois Raab

    发明人： Matthias Blessing ,  Harald Braun ,  Frank Keller ,  Gerhard Koenig ,  Christian Krueger ,  Alois Raab

    IPC分类号： F02B3/00 ,  F02B5/00

    CPC分类号： F02M61/1846 ,  F02D41/402 ,  F02D41/403 ,  F02D41/405 ,  F02M45/086 ,  F02M61/161 ,  F02M63/0225 ,  Y02T10/44

    摘要： A method for operating an internal combustion engine, injects fuel directly into a combustion chamber as a main injection, a postinjection and optionally also as a preinjection. An injection nozzle with a plurality of injection bores effects the preinjection and the postinjection preferably which is carried out cyclically. To minimize wetting of the combustion chamber walls, during the postinjection the partial quantities of fuel and a lift of the nozzle needle of the injection nozzle are set so that, for each partial quantity of the postinjection injected into the combustion chamber, the reach of the respective fuel jet in the combustion chamber is limited and the reach is less than the distance to a combustion chamber boundary.

    摘要翻译： 一种用于操作内燃机的方法，将燃料直接喷入作为主喷射的燃烧室，喷射后和任选地也可以作为预喷射。 具有多个注射孔的注射喷嘴优选地进行预注射和后注射，优选循环进行。 为了最小化燃烧室壁的湿润度，在后喷射期间，设定喷射喷嘴的喷嘴针的部分量的燃料和升程，使得对于喷射到燃烧室中的每个部分喷射喷射针的距离， 燃烧室内的燃料喷射受到限制，并且到达燃烧室边界的距离。

    Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same
    19.
    发明授权
    Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same 有权
    确定器件晶片上掺杂区域的特性的方法以及用于实现其的系统

    公开(公告)号：US07504838B1

    公开(公告)日：2009-03-17

    申请号：US11381239

    申请日：2006-05-02

    申请人： Zhiyong Zhao ,  Christian Krueger

    发明人： Zhiyong Zhao ,  Christian Krueger

    IPC分类号： G01R31/02

    CPC分类号： G01R31/2831 ,  H01L21/26513

    摘要： Disclosed herein are various methods of determining characteristics of doped regions on device wafers, and a system for accomplishing same. In one illustrative embodiment, the method includes providing a device substrate comprising a plurality of masked areas, a plurality of unmasked areas, and at least one doped region formed in the substrate, determining a ratio between the unmasked areas and the masked areas for the device substrate, illuminating an area of the device substrate comprising the masked areas, the unmasked areas, and at least one doped region, and measuring an induced surface photovoltage of the device substrate while accounting for the ratio of the unmasked areas and the masked areas of the device substrate. In another illustrative embodiment, the method includes providing an SOI substrate comprised of an active layer, the active layer having a thickness, illuminating an area of the substrate using a light source having a wavelength that is sufficiently long such that an excited region created in the active layer due to the illumination does not extend beyond the thickness of the active layer, and measuring an induced surface photovoltage resulting from the illumination.

    摘要翻译： 本文公开了确定器件晶片上的掺杂区域的特性的各种方法以及用于实现其的系统。 在一个说明性实施例中，该方法包括提供包括多个掩蔽区域，多个未掩模区域和形成在该衬底中的至少一个掺杂区域的器件衬底，确定该未屏蔽区域与该器件的掩蔽区域之间的比率 衬底，照射包括掩蔽区域，未掩蔽区域和至少一个掺杂区域的器件衬底的区域，以及测量器件衬底的感应表面光电压，同时考虑未掩蔽区域和掩蔽区域的掩蔽面积的比率 器件衬底。 在另一说明性实施例中，该方法包括提供由有源层构成的SOI衬底，有源层具有厚度，使用具有足够长的波长的光源照射衬底的区域，使得在 由于照明而导致的有源层不会超出有源层的厚度，并且测量由照明产生的感应表面光电压。