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    Sialon phosphor, method for producing same, and light-emitting device package using same
    16.
    发明授权
    Sialon phosphor, method for producing same, and light-emitting device package using same 有权
    赛隆荧光体及其制造方法以及使用其的发光装置封装

    公开(公告)号：US09391245B2

    公开(公告)日：2016-07-12

    申请号：US13825276

    申请日：2011-09-19

    Applicant: Hyong Sik Won ,  Chul Soo Yoon ,  Youn Gon Park ,  Chang Bun Yoon

    Inventor： Hyong Sik Won ,  Chul Soo Yoon ,  Youn Gon Park ,  Chang Bun Yoon

    IPC: C09K11/64 ,  H01L33/50 ,  C09K11/08 ,  C09K11/77 ,  H05B33/14 ,  B22F3/02

    CPC classification number: H01L33/502 ,  B22F3/02 ,  C09K11/0883 ,  C09K11/7728 ,  C09K11/7734 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/181 ,  H05B33/14 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: According to one embodiment of the present invention, a method for producing a sialon phosphor comprises: mixing a silicon precursor and an aluminum precursor and sintering the mixture to form a first sintered body; and mixing the first sintered body and a precursor for an active material and heat-treating the mixture to form a second sintered body. That is, the method for producing a sialon phosphor according to one embodiment of the present invention involves firstly forming the first sintered body serving as a host material to stably ensure a crystal structure, and then mixing the active material and the first sintered body so as to preserve the role of the active material without sacrificing the crystal structure of the first sintered body. Eventually, the active material in the crystal structure of the first sintered body is located in an interstitial site not located in the Si or Al position, thereby preventing the degradation of the crystallinity of the first sintered body. In addition, the crystal structure of the sialon phosphor produced by the above-described method is stable, and the sialon phosphor exhibits superior thermal stability at a high temperature, and therefore the degradation in the efficiency thereof caused by a shortened lifespan thereof is extremely slight even over long-term operation. In addition, the crystal structure of the sialon phosphor in the light-emitting device package comprising the sialon phosphor produced by the above-described method is stable, and therefore the degradation in luminance caused by a degradation of crystallinity may be prevented.

    Abstract translation: 根据本发明的一个实施方案，一种制备赛隆荧光体的方法包括：将硅前体和铝前体混合并烧结混合物以形成第一烧结体; 并将第一烧结体和活性物质的前体混合，并对混合物进行热处理以形成第二烧结体。 也就是说，本发明的一个实施方式的赛隆荧光体的制造方法包括首先形成作为主体材料的第一烧结体，以稳定地确保晶体结构，然后将活性材料和第一烧结体混合，以便 以保护活性材料的作用而不牺牲第一烧结体的晶体结构。 最终，第一烧结体的晶体结构中的活性物质位于不位于Si或Al位置的间隙位置，从而防止第一烧结体的结晶性降低。 此外，通过上述方法制造的赛隆荧光体的晶体结构是稳定的，并且赛隆荧光体在高温下表现出优异的热稳定性，因此其寿命缩短导致的效率的降低非常小 甚至长期运作。 此外，包含通过上述方法制造的赛隆荧光体的发光器件封装中的赛隆荧光体的晶体结构是稳定的，因此可以防止由结晶度降低引起的亮度劣化。

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