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    TEST METHOD FOR DETERMINING RETICLE TRANSMISSION STABILITY
    12.
    发明申请
    TEST METHOD FOR DETERMINING RETICLE TRANSMISSION STABILITY 有权
    用于确定传输稳定性的测试方法

    公开(公告)号：US20090262317A1

    公开(公告)日：2009-10-22

    申请号：US12105311

    申请日：2008-04-18

    申请人： Timothy A. Brunner ,  Colin J. Brodsky ,  Michael B. Pike

    发明人： Timothy A. Brunner ,  Colin J. Brodsky ,  Michael B. Pike

    IPC分类号： G03B27/52 ,  G01N21/00

    CPC分类号： G03B27/52 ,  G01N21/956 ,  G01N2021/95676 ,  G03F1/84

    摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.

    摘要翻译： 通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。 检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。 使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。 掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。 这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

    Method of inspecting integrated circuits during fabrication
    13.
    发明授权
    Method of inspecting integrated circuits during fabrication 有权
    在制造期间检查集成电路的方法

    公开(公告)号：US07454302B2

    公开(公告)日：2008-11-18

    申请号：US11872060

    申请日：2007-10-15

    申请人： Colin J. Brodsky ,  MaryJane Brodsky

    发明人： Colin J. Brodsky ,  MaryJane Brodsky

    IPC分类号： G01N37/00 ,  G06F19/00

    CPC分类号： H01L22/20

    摘要： A method, system and a computer program product for inspecting integrated circuit chips during fabrication. The method including: selecting an integrated circuit chip at a selected level of fabrication; determining coordinates of potential failures of the integrated circuit chip based on one or more risk of failure analyses performed ancillary to fabrication of the integrated circuit chip; automatically generating one or more enhanced defect inspection regions for inspecting the integrated circuit chip based on the coordinates; automatically selecting one or more enhanced defect inspection parameters for each of the enhanced defect inspection regions based on the one or more risk of failure analyses; and generating an enhanced defect inspection recipe, the enhanced defect inspection recipe including a location on the integrated circuit chip, an enhanced defect inspection parameter and a value for the enhanced defect inspection parameter for each of the one or more enhanced defect inspection regions.

    摘要翻译： 一种用于在制造期间检查集成电路芯片的方法，系统和计算机程序产品。 该方法包括：以选定的制造水平选择集成电路芯片; 基于集成电路芯片的制造辅助执行的一个或多个故障分析风险来确定集成电路芯片的潜在故障的坐标; 自动生成一个或多个增强的缺陷检查区域，用于基于坐标检查集成电路芯片; 基于一个或多个故障分析的风险，自动地为每个增强缺陷检查区域选择一个或多个增强的缺陷检查参数; 并且生成增强的缺陷检查配方，所述增强缺陷检查配方包括集成电路芯片上的位置，增强的缺陷检查参数和用于所述一个或多个增强缺陷检查区域中的每一个的增强的缺陷检查参数的值。

    Density-aware dynamic leveling in scanning exposure systems
    17.
    发明授权
    Density-aware dynamic leveling in scanning exposure systems 失效
    扫描曝光系统中的密度感知动态调平

    公开(公告)号：US07239371B2

    公开(公告)日：2007-07-03

    申请号：US11163409

    申请日：2005-10-18

    申请人： Bernhard R. Liegl ,  Colin J. Brodsky ,  Scott J. Bukofsky ,  Steven J. Holmes

    发明人： Bernhard R. Liegl ,  Colin J. Brodsky ,  Scott J. Bukofsky ,  Steven J. Holmes

    IPC分类号： G03B27/52 ,  G03B27/42 ,  G03B27/32

    CPC分类号： G03F9/7034 ,  G03F9/7026

    摘要： A method and apparatus are provided for improving the leveling and, consequently, the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention performs a pre-scan of the wafer's topography and assigns importance values to different regions of the wafer surface. Exposure focus instructions are calculated based on the topography and importance values of the different regions and the wafer is then scanned and imaged based on the calculated exposure focus instructions.

    摘要翻译： 提供了一种方法和装置，用于在半导体制造工艺的光刻成像过程期间改进调平，并因此改善诸如晶片的基板的聚焦。 本发明对晶片的形貌进行预扫描，并将重要性值分配给晶片表面的不同区域。 基于不同区域的形貌和重要度值计算曝光焦点指令，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像。

    Structure resulting from chemical shrink process over BARC (bottom anti-reflective coating)
    18.
    发明授权
    Structure resulting from chemical shrink process over BARC (bottom anti-reflective coating) 失效
    由BARC（底部抗反射涂层）的化学收缩过程产生的结构

    公开(公告)号：US08491984B2

    公开(公告)日：2013-07-23

    申请号：US13311638

    申请日：2011-12-06

    申请人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    发明人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    IPC分类号： B32B3/24 ,  H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24521 ,  Y10T428/249953

    摘要： A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.

    摘要翻译： 一个结构。 该结构包括：孔层; 包括顶孔层表面的孔层，其中所述孔层具有垂直于所述孔层表面的第一方向的厚度; 底部抗反射涂层（BARC）层，其在顶部孔层表面上与孔层直接物理接触; 与BARC层直接物理接触的光致抗蚀剂层，其中第一方向上的连续孔完全穿过光致抗蚀剂层，BARC层和空穴层; 以及在光致抗蚀剂层的侧面与顶层孔表面的光致抗蚀剂层直接物理接触的聚合孔收缩区域，其中，所述孔收缩区域在所述孔层表面的方向 从BARC层到孔层。

    Composite structures to prevent pattern collapse
    19.
    发明授权
    Composite structures to prevent pattern collapse 失效
    复合结构防止图案崩溃

    公开(公告)号：US07799503B2

    公开(公告)日：2010-09-21

    申请号：US11750026

    申请日：2007-05-17

    申请人： Colin J. Brodsky ,  Allen H. Gabor ,  Javier Perez

    发明人： Colin J. Brodsky ,  Allen H. Gabor ,  Javier Perez

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0035

    摘要： A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.

    摘要翻译： 一种方法和结构。 该结构包括：固体芯，其包括第一光致抗蚀剂材料，所述芯在基底上具有底表面，顶表面以及在顶表面和底表面之间的相对的第一和第二侧表面; 以及壳体，其包括第二光致抗蚀剂材料，所述壳体在所述基板的顶表面上，所述外壳包含通向所述基板的顶表面的空腔，所述外壳形成在所述顶表面上以及所述第一和第二侧表面壁上 核心，核心完全填充空腔。 核心比壳更僵硬。 该方法包括：从第一光致抗蚀剂层形成芯并从施加在芯上的第二光致抗蚀剂层形成壳。 芯可以交联以增加其刚度。

    Method of preventing pinhole defects through co-polymerization
    20.
    发明授权
    Method of preventing pinhole defects through co-polymerization 有权
    通过共聚防止针孔缺陷的方法

    公开(公告)号：US07632631B2

    公开(公告)日：2009-12-15

    申请号：US11029813

    申请日：2005-01-05

    申请人： Steven A. Scheer ,  Colin J. Brodsky

    发明人： Steven A. Scheer ,  Colin J. Brodsky

    IPC分类号： G03F7/00

    CPC分类号： G03F7/168 ,  G03F7/091 ,  G03F7/11 ,  Y10S430/136

    摘要： A method is provided for forming a stable thin film on a substrate. The method includes depositing a co-polymer composition having a first component and a second component onto a substrate to form a stable film having a first thickness. The first component has first dielectric properties not enabling the first component by itself to produce the stable film having the first thickness. However, the second component has second dielectric properties which impart stability to the film at the first thickness. In a preferred embodiment, the second component includes a leaving group, and the method further includes first thermal processing the film to cause a solvent but not the leaving group to be removed from the film, after which second thermal processing is performed to at least substantially remove the leaving group from the film. As a result, the film is reduced to a second thickness smaller than the first thickness, and the film remains stable during both the first and the second thermal processing.

    摘要翻译： 提供了在基板上形成稳定的薄膜的方法。 该方法包括将具有第一组分和第二组分的共聚物组合物沉积到基底上以形成具有第一厚度的稳定膜。 第一组分具有不能使第一组分本身产生具有第一厚度的稳定膜的第一介电性质。 然而，第二组分具有赋予第一厚度的薄膜稳定性的第二介电特性。 在优选的实施方案中，第二组分包括离去基团，并且该方法还包括首先热处理膜以引起溶剂而不是离开基团从膜中除去，之后进行第二热处理至少基本上 从电影中删除离开组。 结果，膜被还原成小于第一厚度的第二厚度，并且在第一和第二热处理期间膜保持稳定。