摘要:
A multi-phase clock signal generating circuit includes a phase correction block configured to receive multi-phase clock signals and produce a plurality of interpolated phase clock signal groups in which the phases of the multi-phase clock signals are differently controlled. The multi-phase clock signals are out of phase with each other. A clock control block is configured to produce output multi-clock signals by selectively outputting one among the interpolated phase clock signal groups using a digital control signal having a plurality of bits which are produced based on phase differences of the multi-phase clock signals.
摘要:
A counter with overflow prevention capability includes a counting unit configured to count an output code in response to an input signal and an overflow preventing unit configured to control the counting unit to stop counting the output code when a current value of the output code is a maximum value but a previous value thereof is not the maximum value.
摘要:
A semiconductor device including an edge synchronizer which outputs a synchronized strobe signal generated by synchronizing a transition time point of a strobe signal with clock edges of a main clock or a sub clock, a detector which outputs a phase determination signal indicating a phase difference between the main clock and the sub clock in response to the synchronized strobe signal, and a duty ratio corrector which adjusts a duty ratio of the main clock and the sub clock in response to the phase determination signal.
摘要:
A duty ratio correction circuit includes a duty cycle ratio controlling unit configured to generate an internal clock signal having a duty cycle ratio defined according to a first reference clock signal and a reset signal and a reset signal generating unit configured to generate the reset signal in response to a second reference clock signal and the internal clock signal fed back thereto.
摘要:
A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.
摘要:
A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.
摘要:
A semiconductor device including an edge synchronizer which outputs a synchronized strobe signal generated by synchronizing a transition time point of a strobe signal with clock edges of a main clock or a sub clock, a detector which outputs a phase determination signal indicating a phase difference between the main clock and the sub clock in response to the synchronized strobe signal, and a duty ratio corrector which adjusts a duty ratio of the main clock and the sub clock in response to the phase determination signal.
摘要:
A ring oscillator including a plurality of buffer units, each of which has a cross-coupled structure, for generating clock signals using a bias voltage having a predetermined voltage level applied thereto, wherein the clock signals have a swing width corresponding to the bias voltage.
摘要:
A low pass filter includes a driver unit configured to output a voltage proportional to an input pulse width, a charge/discharge unit configured to charge the output voltage of the driver unit, a comparator unit configured to compare an output voltage of the charge/discharge unit with a reference value to output a square wave signal, and a switching unit configured to switch the charge/discharge unit to an operation state, based on a bandwidth expansion signal.
摘要:
Apparatus for detecting duty ratio of signals in semiconductor device circuit includes a circuit for detecting a duty ratio of signals in a semiconductor device includes a comparing unit which compares a duty cycle of first and second input clock signals input differentially and generates a first output signal and a second output signal, a latching unit which stores the first and second output signals and generates a detected signal corresponding to the first and second output signals, and an adjusting unit which receives the first and the second output signals, and transmits the first and the second output signals to the latching unit based on a voltage level difference of the first and second output signals.