摘要:
A semiconductor memory device includes an edge detector configured to receive two pairs of complementary clocks to detect edges of the clocks, a comparator configured to compare output signals of the edge detector to detect whether clocks of the same pair have a phase difference of 180 degrees and detect whether clocks of different pairs have a phase difference of 90 degrees, a control signal generator configured to generate a control signal for controlling phases of the clocks according to an output signal of the comparator, and a phase corrector configured to correct phases of the clocks in response to the control signal.
摘要:
A clock generating circuit, including a pulse generating unit to generate a plurality of pulse signals based on a reference clock, the pulse signals each having the same period, a phase difference between the adjacent pulse signals being a first phase difference; and a multi-phase clock generating unit to generate a plurality of multi-phase clocks, a phase difference between the adjacent multi-phase clocks being equal to a second phase difference between pulse signals of a pulse signal pair, based on a plurality of unit-phase clock generating units receiving the pulse signal pairs.
摘要:
A clock generating circuit, including a pulse generating unit to generate a plurality of pulse signals based on a reference clock, the pulse signals each having the same period, a phase difference between the adjacent pulse signals being a first phase difference; and a multi-phase clock generating unit to generate a plurality of multi-phase clocks, a phase difference between the adjacent multi-phase clocks being equal to a second phase difference between pulse signals of a pulse signal pair, based on a plurality of unit-phase clock generating units receiving the pulse signal pairs.
摘要:
A filtering circuit includes a clock selection unit configured to transfer a first clock or a second clock having a frequency lower than the first clock as an operating clock in response to a frequence signal, and a filter configured to filter an input signal and generate a filtered signal in synchronization with the operating clock.
摘要:
A phase locked loop that generates an internal clock by controlling a delay time of a delay cell according to conditions of PVT, thereby improving a jitter characteristic of the internal clock. The delay cell includes a first current controller for controlling first and second currents in response to a control voltage, and a second current controller for controlling the first and second currents in response to frequency range selection signals. The phase locked loop includes a phase comparator for comparing a reference clock with a feedback clock, a control voltage generator for generating a control voltage corresponding to an output of the phase comparator, and a voltage controlled oscillator for generating an internal clock having a frequency in response to the control voltage and one or more frequency range control signals, wherein the feedback clock is generated using the internal clock.
摘要:
A counting circuit includes: a clock division unit configured to divide a reference clock signal at a preset division ratio and generate a divided clock signal, a counting unit configured to count the divided clock signal, and a counting control unit configured to enable the counting unit during an enable period corresponding to the division ratio.
摘要:
An internal voltage generator includes: a detection unit configured to detect a level of an internal voltage in comparison to a reference voltage; a first driving unit configured to discharge an internal voltage terminal, through which the internal voltage is outputted, in response to an output signal of the detection unit; a current detection unit configured to detect a discharge current flowing through the first driving unit; and a second driving unit configured to charge the internal voltage terminal in response to an output signal of the current detection unit.